BC556BG
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Motorola BC556BG

Manufacturer No:
BC556BG
Manufacturer:
Motorola
Package:
Bulk
Description:
TRANS PNP 65V 0.1A TO92
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC556BG is a PNP epitaxial silicon transistor produced by On Semiconductor (formerly part of Motorola). This transistor is designed for both switching and amplifier applications. It is part of the BC556, BC557, and BC558 series, known for their high voltage and low noise characteristics. The BC556BG is RoHS compliant, Pb-free, and halogen-free, making it suitable for a wide range of modern electronic designs.

Key Specifications

Parameter Symbol Value Unit
Collector - Base Voltage VCBO -80 V
Collector - Emitter Voltage VCEO -65 V
Emitter - Base Voltage VEBO -5.0 V
Collector Current (DC) IC -100 mA mAdc
Base Current (Peak) IBM -200 mA mAdc
Total Device Dissipation @ TA = 25°C PD 625 mW mW
DC Current Gain (hFE) hFE 110 - 800 -
Collector-Emitter Saturation Voltage (VCE(sat)) VCE(sat) -0.075 to -0.65 V V
Base-Emitter Saturation Voltage (VBE(sat)) VBE(sat) -0.7 to -1.0 V V
Current Gain Bandwidth Product (fT) fT 150 MHz MHz
Output Capacitance (Cob) Cob 6 pF pF
Noise Figure (NF) NF 2 dB dB

Key Features

  • High Voltage Capability: The BC556BG has a high collector-emitter voltage rating of -65 V, making it suitable for applications requiring high voltage handling.
  • Low Noise: This transistor is known for its low noise characteristics, which is beneficial in amplifier circuits.
  • RoHS Compliant: The BC556BG is Pb-free, halogen-free, and RoHS compliant, ensuring it meets modern environmental standards.
  • Switching and Amplifier Applications: It is designed for both switching and amplifier applications, offering versatility in circuit design.
  • High DC Current Gain: The transistor has a high DC current gain (hFE) ranging from 110 to 800, depending on the classification.

Applications

  • Amplifier Circuits: The BC556BG is suitable for use in various amplifier circuits due to its high DC current gain and low noise characteristics.
  • Switching Circuits: Its high voltage and current handling capabilities make it a good choice for switching applications.
  • Audio Equipment: It can be used in audio amplifiers and other audio equipment where low noise and high fidelity are required.
  • Automotive Electronics: The transistor's robust specifications make it suitable for use in automotive electronic systems.
  • General Purpose Electronics: It can be used in a variety of general-purpose electronic circuits requiring a reliable PNP transistor.

Q & A

  1. What is the maximum collector-emitter voltage of the BC556BG?

    The maximum collector-emitter voltage (VCEO) of the BC556BG is -65 V.

  2. What is the typical DC current gain (hFE) of the BC556BG?

    The typical DC current gain (hFE) of the BC556BG ranges from 110 to 800, depending on the classification.

  3. Is the BC556BG RoHS compliant?

    Yes, the BC556BG is RoHS compliant, Pb-free, and halogen-free.

  4. What are the typical applications of the BC556BG?

    The BC556BG is typically used in amplifier circuits, switching circuits, audio equipment, automotive electronics, and general-purpose electronic circuits.

  5. What is the maximum collector current of the BC556BG?

    The maximum collector current (IC) of the BC556BG is -100 mA.

  6. What is the noise figure of the BC556BG?

    The noise figure (NF) of the BC556BG is 2 dB.

  7. What is the current gain bandwidth product (fT) of the BC556BG?

    The current gain bandwidth product (fT) of the BC556BG is 150 MHz.

  8. What is the output capacitance (Cob) of the BC556BG?

    The output capacitance (Cob) of the BC556BG is 6 pF.

  9. What is the base-emitter saturation voltage (VBE(sat)) of the BC556BG?

    The base-emitter saturation voltage (VBE(sat)) of the BC556BG ranges from -0.7 to -1.0 V.

  10. What is the collector-emitter saturation voltage (VCE(sat)) of the BC556BG?

    The collector-emitter saturation voltage (VCE(sat)) of the BC556BG ranges from -0.075 to -0.65 V.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):65 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:180 @ 2mA, 5V
Power - Max:625 mW
Frequency - Transition:280MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:TO-92 (TO-226)
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Similar Products

Part Number BC556BG BC556BU BC557BG BC556B
Manufacturer Motorola onsemi onsemi Fairchild Semiconductor
Product Status Obsolete Obsolete Obsolete Obsolete
Transistor Type PNP PNP PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 65 V 65 V 45 V 65 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 100nA 15nA (ICBO) 100nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 2mA, 5V 110 @ 2mA, 5V 180 @ 2mA, 5V 180 @ 2mA, 5V
Power - Max 625 mW 500 mW 625 mW 625 mW
Frequency - Transition 280MHz 150MHz 320MHz 280MHz
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) TO-226-3, TO-92-3 Long Body TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92 (TO-226) TO-92-3 TO-92 (TO-226) TO-92 (TO-226)

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