Overview
The SZESD9R3.3ST5G is an ESD protection diode designed by onsemi to provide robust protection against electrostatic discharge (ESD) for ultra-low current applications. This device is particularly suited for protecting Advanced Silicon Gate (ASG) and Application-Specific Integrated Circuits (ASICs) in environments where space is limited and high-speed data lines are critical. The SZESD9R3.3ST5G offers low leakage, low capacitance, and fast response times, making it ideal for applications such as human body sensors and other space-constrained designs.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Stand-off Voltage | VRWM | 3.3 | V |
| Maximum Reverse Leakage Current | IR | < 1 | nA |
| Maximum Capacitance | C | 0.5 | pF |
| Clamping Voltage @ IPP | VC | 7.8 | V |
| Response Time | < 1.0 | ns | |
| ESD Rating | IEC61000-4-2 Level 4 | ||
| Package Dimensions | 0.039" x 0.024" (1.00 mm x 0.60 mm) | ||
| Body Height | 0.016" (0.4 mm) | ||
| Junction Temperature Range | TJ | -55 to +125 | °C |
| Storage Temperature Range | Tstg | -55 to +150 | °C |
Key Features
- Ultra-low leakage current (< 1 nA from 0°C to 50°C)
- Ultra-low capacitance (0.5 pF)
- Low clamping voltage
- Fast response time (< 1.0 ns)
- Small package size (SOD-923)
- IEC61000-4-2 Level 4 ESD protection
- SZ prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable
- Pb-free and halogen-free device
Applications
The SZESD9R3.3ST5G is designed for use in ultra-low current applications, particularly in human body sensors and other space-constrained designs. It is also suitable for use in various portable devices such as cellular phones, digital cameras, and power supplies where high-speed data lines and minimal board space are critical.
Q & A
- What is the primary function of the SZESD9R3.3ST5G?
The primary function is to provide ESD protection for ultra-low current applications. - What are the key benefits of the SZESD9R3.3ST5G?
Ultra-low leakage, ultra-low capacitance, low clamping voltage, and fast response time. - What is the stand-off voltage of the SZESD9R3ST5G?
3.3 V. - What is the maximum reverse leakage current?
< 1 nA from 0°C to 50°C. - What is the maximum capacitance?
0.5 pF. - What is the response time of the device?
< 1.0 ns. - What ESD protection level does the device offer?
IEC61000-4-2 Level 4. - Is the device Pb-free and halogen-free?
Yes, it is Pb-free and halogen-free. - What are the package dimensions?
0.039" x 0.024" (1.00 mm x 0.60 mm). - What is the junction temperature range?
-55 to +125°C. - What is the storage temperature range?
-55 to +150°C.
