SBAS16LT1G
  • Share:

onsemi SBAS16LT1G

Manufacturer No:
SBAS16LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE GP 100V 200MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SBAS16LT1G is a high-speed switching diode manufactured by onsemi. It is encapsulated in a SOT-23 surface-mounted device plastic package, making it suitable for a variety of applications requiring compact and efficient diode solutions. This diode is AEC-Q101 qualified and PPAP capable, ensuring its reliability and compliance with automotive and other stringent application requirements. Additionally, it is Pb-free, halogen-free/BFR-free, and RoHS compliant, aligning with modern environmental standards.

Key Specifications

Characteristic Symbol Value Unit
Continuous Reverse Voltage VR 100 V
Peak Forward Current IF 200 mA
Non-Repetitive Peak Forward Surge Current IFSM 1.8 A
Repetitive Peak Forward Current IFRM 1.0 A
Forward Voltage VF 1250 mV
Reverse Recovery Time trr 6.0 ns
Diode Capacitance CD 2.0 pF
Power Dissipation PD 225 mW
Operating Temperature Range TJ, Tstg -55 to +150 °C
Package Style SOT-23 (SC-59, TO-236)
Mounting Method Surface Mount

Key Features

  • AEC-Q101 qualified and PPAP capable, ensuring reliability in automotive and other stringent applications.
  • Pb-free, halogen-free/BFR-free, and RoHS compliant, meeting modern environmental standards.
  • High-speed switching capability with a reverse recovery time of 6.0 ns.
  • Low forward voltage drop of 1250 mV.
  • Compact SOT-23 surface-mounted device package.
  • Wide operating temperature range from -55°C to +150°C.

Applications

The SBAS16LT1G switching diode is suitable for various applications, including:

  • Automotive systems requiring high reliability and compliance with AEC-Q101 standards.
  • High-speed switching circuits where fast recovery times are crucial.
  • General-purpose switching and rectification in electronic devices.
  • Consumer electronics and industrial control systems.

Q & A

  1. What is the maximum continuous reverse voltage of the SBAS16LT1G?

    The maximum continuous reverse voltage is 100 V.

  2. What is the peak forward current rating of the SBAS16LT1G?

    The peak forward current rating is 200 mA.

  3. What is the reverse recovery time of the SBAS16LT1G?

    The reverse recovery time is 6.0 ns.

  4. Is the SBAS16LT1G RoHS compliant?
  5. What is the operating temperature range of the SBAS16LT1G?

    The operating temperature range is from -55°C to +150°C.

  6. What package style does the SBAS16LT1G come in?

    The SBAS16LT1G comes in a SOT-23 (SC-59, TO-236) package.

  7. Is the SBAS16LT1G suitable for automotive applications?
  8. What is the maximum power dissipation of the SBAS16LT1G?

    The maximum power dissipation is 225 mW.

  9. What is the diode capacitance of the SBAS16LT1G?

    The diode capacitance is 2.0 pF.

  10. How is the SBAS16LT1G mounted?

    The SBAS16LT1G is surface-mounted.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):6 ns
Current - Reverse Leakage @ Vr:1 µA @ 100 V
Capacitance @ Vr, F:2pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.34
2,358

Please send RFQ , we will respond immediately.

Same Series
BAS16LT1G
BAS16LT1G
DIODE GP 100V 200MA SOT23-3
SBAS16LT3G
SBAS16LT3G
DIODE GP 100V 200MA SOT23-3
SBAS16LT1G
SBAS16LT1G
DIODE GP 100V 200MA SOT23-3

Similar Products

Part Number SBAS16LT1G SBAS16LT3G SBAS16WT1G SBAS116LT1G SBAS16HT1G
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 100 V 75 V 75 V 100 V
Current - Average Rectified (Io) 200mA (DC) 200mA (DC) 200mA 200mA (DC) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 6 ns 6 ns 6 ns 3 µs 6 ns
Current - Reverse Leakage @ Vr 1 µA @ 100 V 1 µA @ 100 V 1 µA @ 75 V 5 nA @ 75 V 1 µA @ 75 V
Capacitance @ Vr, F 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 SC-76, SOD-323
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SC-70-3 (SOT323) SOT-23-3 (TO-236) SOD-323
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

PMEG1020EH,115
PMEG1020EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 10V 2A SOD123F
BAT54-AU_R1_000A1
BAT54-AU_R1_000A1
Panjit International Inc.
SOT-23, SKY
BAV102
BAV102
onsemi
DIODE GEN PURP 150V 200MA LL34
PMEG4010ETR/B115
PMEG4010ETR/B115
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
STTH1R02RL
STTH1R02RL
STMicroelectronics
DIODE GEN PURP 200V 1.5A DO41
MURS120T3G
MURS120T3G
onsemi
DIODE GEN PURP 200V 1A SMB
MURS140T3G
MURS140T3G
onsemi
DIODE GEN PURP 400V 1A SMB
1N4007G L
1N4007G L
MDD
GENERAL DIODE 1KV 1A DO-41
BAS216,135
BAS216,135
NXP USA Inc.
DIODE GEN PURP 75V 250MA SOD2
1N4004GP
1N4004GP
onsemi
DIODE GEN PURP 400V 1A DO41
MUR2100E
MUR2100E
onsemi
DIODE GEN PURP 1KV 2A AXIAL
BAT43 A0G
BAT43 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA DO35

Related Product By Brand

MBRS140T3H
MBRS140T3H
onsemi
DIODE SCHOTTKY
1SMB5918BT3G
1SMB5918BT3G
onsemi
DIODE ZENER 5.1V 3W SMB
BC547BTAR
BC547BTAR
onsemi
TRANS NPN 45V 0.1A TO92-3
NTK3043NT1G
NTK3043NT1G
onsemi
MOSFET N-CH 20V 210MA SOT723
FDMS86350ET80
FDMS86350ET80
onsemi
MOSFET N-CH 80V 25A/198A POWER56
NB3N551MNR4G
NB3N551MNR4G
onsemi
IC CLK BUFFER 1:4 180MHZ 8DFN
MC74AC273DWR2G
MC74AC273DWR2G
onsemi
IC FF D-TYPE SNGL 8BIT 20SOIC
M74VHC1GT04DFT1G
M74VHC1GT04DFT1G
onsemi
IC INVERTER 1CH 1-INP SC88A
NLSV2T244DR2G
NLSV2T244DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
NCP302HSN27T1G
NCP302HSN27T1G
onsemi
IC SUPERVISOR 1 CHANNEL 5TSOP
NCV4269AD150R2G
NCV4269AD150R2G
onsemi
IC REG LINEAR 5V 150MA 8SOIC
CS8190ENF16G
CS8190ENF16G
onsemi
IC DRIVER 16DIP