RB751S40P2T5G
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onsemi RB751S40P2T5G

Manufacturer No:
RB751S40P2T5G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
SS SWITCHING DIODE SOD923
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The RB751S40P2T5G is a Schottky barrier diode produced by onsemi, designed for high-speed switching applications, circuit protection, and voltage clamping. This diode is characterized by its extremely low forward voltage and fast switching speed, making it ideal for use in hand-held and portable devices where space is limited. The device is lead-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and compliance with regulatory standards.

Key Specifications

RatingSymbolValueUnit
Peak Reverse VoltageVRM40V
Reverse VoltageVR30V
Forward Continuous Current (DC)IF30mA
Peak Forward Surge CurrentIFSM500mA
Reverse Breakdown VoltageV(BR)R30V
Total CapacitanceCT2.0 - 2.5pF
Reverse LeakageIR300 - 500nA
Forward VoltageVF0.28 - 0.37V
Junction and Storage Temperature RangeTJ, Tstg-55 to +150°C
Thermal Resistance, Junction-to-AmbientRJA635°C/W

Key Features

  • Extremely fast switching speed
  • Extremely low forward voltage - 0.28 V (Typ) @ IF = 1.0 mA DC
  • Low reverse current
  • Lead-free plating
  • NSV prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable
  • Pb-free, halogen-free/BFR-free and RoHS compliant

Applications

The RB751S40P2T5G is suitable for a variety of applications, including high-speed switching circuits, circuit protection, and voltage clamping. It is particularly useful in hand-held and portable devices due to its miniature surface mount package and low forward voltage, which reduces conduction loss.

Q & A

  1. What is the peak reverse voltage of the RB751S40P2T5G? The peak reverse voltage is 40 V.
  2. What is the forward continuous current rating of the RB751S40P2T5G? The forward continuous current rating is 30 mA.
  3. What is the typical forward voltage of the RB751S40P2T5G? The typical forward voltage is 0.28 V at IF = 1.0 mA DC.
  4. Is the RB751S40P2T5G RoHS compliant? Yes, the RB751S40P2T5G is RoHS compliant.
  5. What is the junction and storage temperature range of the RB751S40P2T5G? The junction and storage temperature range is -55 to +150°C.
  6. What are the key applications of the RB751S40P2T5G? The key applications include high-speed switching circuits, circuit protection, and voltage clamping.
  7. What is the thermal resistance, junction-to-ambient, of the RB751S40P2T5G? The thermal resistance, junction-to-ambient, is 635 °C/W.
  8. Is the RB751S40P2T5G lead-free? Yes, the RB751S40P2T5G has lead-free plating.
  9. What is the reverse leakage current of the RB751S40P2T5G? The reverse leakage current is between 300 and 500 nA at VR = 30 V.
  10. What package type does the RB751S40P2T5G come in? The RB751S40P2T5G comes in a SOD-523 package.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):30mA
Voltage - Forward (Vf) (Max) @ If:370 mV @ 1 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):8 ns
Current - Reverse Leakage @ Vr:500 nA @ 30 V
Capacitance @ Vr, F:2pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-923
Supplier Device Package:SOD-923
Operating Temperature - Junction:-55°C ~ 150°C
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