NTS12120EMFST1G
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onsemi NTS12120EMFST1G

Manufacturer No:
NTS12120EMFST1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 120V 12A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTS12120EMFST1G is a very low forward voltage trench-based Schottky rectifier produced by onsemi. This component is designed to offer high efficiency and reliability in various power management applications. It features fine lithography trench-based Schottky technology, which ensures very low forward voltage and low leakage current. The device is optimized for fast switching with exceptional temperature stability, making it suitable for high-frequency and DC-DC converter applications.

Key Specifications

Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 120 V
Average Rectified Forward Current (Rated VR, TC = 165°C) IF(AV) 12 A
Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 163°C) IFRM 24 A
Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 200 A
Storage Temperature Range Tstg −65 to +175 °C
Operating Junction Temperature TJ −55 to +175 °C
Instantaneous Forward Voltage (IF = 12 A, TJ = 25°C) VF 0.735 V
Thermal Resistance, Junction-to-Case, Steady State RθJC 2.0 °C/W

Key Features

  • Fine lithography trench-based Schottky technology for very low forward voltage and low leakage.
  • Fast switching with exceptional temperature stability.
  • Low power loss and lower operating temperature.
  • Higher efficiency for achieving regulatory compliance.
  • Low thermal resistance.
  • High surge capability.
  • AEC-Q101 qualified and PPAP capable for automotive and other critical applications.
  • Pb-free and halide-free devices.

Applications

  • Switching power supplies, including notebook/netbook adapters, ATX, and flat panel display.
  • High frequency and DC-DC converters.
  • Freewheeling and OR-ing diodes.
  • Reverse battery protection.
  • LED lighting.
  • Instrumentation.

Q & A

  1. What is the peak repetitive reverse voltage of the NTS12120EMFST1G?

    The peak repetitive reverse voltage (VRRM) is 120 V.

  2. What is the average rectified forward current of the NTS12120EMFST1G at 165°C?

    The average rectified forward current (IF(AV)) is 12 A at TC = 165°C.

  3. What is the instantaneous forward voltage at 12 A and 25°C?

    The instantaneous forward voltage (VF) is 0.735 V at IF = 12 A and TJ = 25°C.

  4. What is the thermal resistance, junction-to-case, of the NTS12120EMFST1G?

    The thermal resistance, junction-to-case (RθJC), is 2.0 °C/W.

  5. Is the NTS12120EMFST1G suitable for automotive applications?
  6. What are the typical applications of the NTS12120EMFST1G?

    Typical applications include switching power supplies, high frequency and DC-DC converters, freewheeling and OR-ing diodes, reverse battery protection, LED lighting, and instrumentation.

  7. What is the storage temperature range of the NTS12120EMFST1G?

    The storage temperature range (Tstg) is −65 to +175°C.

  8. Is the NTS12120EMFST1G Pb-free and halide-free?
  9. What is the non-repetitive peak surge current of the NTS12120EMFST1G?

    The non-repetitive peak surge current (IFSM) is 200 A.

  10. What is the operating junction temperature range of the NTS12120EMFST1G?

    The operating junction temperature (TJ) range is −55 to +175°C.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):120 V
Current - Average Rectified (Io):12A
Voltage - Forward (Vf) (Max) @ If:830 mV @ 12 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:55 µA @ 120 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN, 5 Leads
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction:-55°C ~ 150°C
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NRVTS12120EMFST1G
NRVTS12120EMFST1G
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NTS12120EMFST3G
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Similar Products

Part Number NTS12120EMFST1G NTS12120EMFST3G NTS12120MFST1G NTS10120EMFST1G NTS12100EMFST1G
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete
Diode Type Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 120 V 120 V 120 V 120 V 100 V
Current - Average Rectified (Io) 12A 12A 12A 10A 12A
Voltage - Forward (Vf) (Max) @ If 830 mV @ 12 A 830 mV @ 12 A 830 mV @ 12 A 820 mV @ 10 A 730 mV @ 12 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 55 µA @ 120 V 55 µA @ 100 V 55 µA @ 100 V 30 µA @ 120 V 55 µA @ 100 V
Capacitance @ Vr, F - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 175°C -55°C ~ 150°C

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