Overview
The NIF62514T1G is a self-protected power MOSFET from ON Semiconductor, designed to offer advanced protection and performance features. This device is part of the HDPlus series, which leverages ON Semiconductor’s latest MOSFET technology to achieve low on-resistance and integrate smart protection features. The NIF62514T1G is packaged in a SOT-223 case and is Pb-free, making it suitable for a wide range of applications requiring high reliability and efficiency.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (Internally Clamped) | 40 | Vdc |
| Gate-to-Source Voltage | −16 | Vdc |
| Continuous Drain Current @ TA = 25°C | Internally Limited | A |
| Pulsed Drain Current (tp ≤ 10 μs) | 8.93 | A |
| Total Power Dissipation @ TA = 25°C | 1.1 | W |
| Thermal Resistance, Junction-to-Tab | 14 | °C/W |
| Operating and Storage Temperature Range | −55 to 150 | °C |
| Gate Threshold Voltage | 1.0 to 1.7 | Vdc |
| Static Drain-to-Source On-Resistance (VGS = 10 Vdc, ID = 1.4 A, TJ @ 25°C) | 90 | mΩ |
| Current Limit (VGS = 5.0 Vdc) | 6.0 | A |
| Temperature Limit (Turn-off) (VGS = 5.0 Vdc) | 150 | °C |
| ESD Protection (Human Body Model) | 4000 | V |
Key Features
- Current Limitation: Internally limited to prevent overcurrent conditions.
- Thermal Shutdown with Automatic Restart: Protects the device from overheating and automatically restarts once the temperature drops below the threshold.
- Short Circuit Protection: Integrated thermal and current limits provide short circuit protection.
- Low RDS(on): Achieves low on-resistance for efficient operation.
- Avalanche Energy Specified: Can withstand high energy in avalanche mode.
- Slew Rate Control for Low Noise Switching: Reduces noise during switching operations.
- Overvoltage Clamped Protection: Protects against unexpected voltage transients.
- ESD Protection: Integrated Gate-to-Source Clamp provides ESD protection.
- Pb-Free Package: Compliant with Pb-free requirements.
Applications
The NIF62514T1G is suitable for various applications requiring high reliability, efficiency, and protection. These include:
- Power supplies and DC-DC converters.
- Motor control and drive systems.
- Automotive electronics.
- Industrial control systems.
- Consumer electronics requiring robust power management.
Q & A
- What is the maximum drain-to-source voltage for the NIF62514T1G?
The maximum drain-to-source voltage is 40 Vdc.
- What is the gate-to-source voltage range for this MOSFET?
The gate-to-source voltage range is −16 Vdc.
- What is the continuous drain current limit for this device?
The continuous drain current is internally limited.
- What is the thermal shutdown temperature for the NIF62514T1G?
The thermal shutdown temperature is 150°C.
- Does the NIF62514T1G have ESD protection?
Yes, it has integrated Gate-to-Source Clamp for ESD protection.
- What is the typical on-resistance of the NIF62514T1G at 25°C?
The typical on-resistance is 90 mΩ at VGS = 10 Vdc and ID = 1.4 A.
- Is the NIF62514T1G Pb-free?
Yes, the device is Pb-free.
- What is the operating temperature range for this MOSFET?
The operating and storage temperature range is −55 to 150°C.
- Does the NIF62514T1G have avalanche energy specification?
Yes, it can withstand high energy in avalanche mode, specified as 300 mJ.
- What are some common applications for the NIF62514T1G?
Common applications include power supplies, motor control systems, automotive electronics, and industrial control systems.
