MURS320T3H
  • Share:

onsemi MURS320T3H

Manufacturer No:
MURS320T3H
Manufacturer:
onsemi
Package:
Tray
Description:
DIODE GEN PURPOSE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MURS320T3H is a high-performance, ultra-fast recovery rectifier produced by onsemi. This component is designed for high voltage, high frequency rectification and is suitable for use as free-wheeling and protection diodes. It features a compact surface mount package, making it ideal for applications where space and weight are critical. The device is built with state-of-the-art epitaxial construction, oxide passivation, and metal overlay contact, ensuring reliable operation in demanding environments.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 200 V
Working Peak Reverse Voltage VRWM 200 V
Maximum DC Blocking Voltage VDC 200 V
Maximum Average Forward Rectified Current IF(AV) 3.0 @ TL = 140°C, 4.0 @ TL = 130°C A
Peak Forward Surge Current IFSM 125 A
Operating Junction Temperature TJ -65 to +175 °C
Maximum Instantaneous Forward Voltage VF 0.71 V @ IF = 3.0 A, TJ = 150°C V
Maximum Reverse Recovery Time trr 25 ns @ IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A ns
Thermal Resistance, Junction-to-Lead RθJL 11 °C/W

Key Features

  • Ultra-fast recovery time, making it suitable for high frequency applications.
  • Compact surface mount package (SMC - DO-214AB) with J-bend leads, ideal for automated handling.
  • High temperature glass passivated junction for reliable operation.
  • Low forward voltage drop (0.71 to 1.05 V max @ 3.0 A, TJ = 150°C).
  • AEC-Q101 qualified and PPAP capable for automotive and other critical applications.
  • Pb-free, halogen-free/BFR-free, and RoHS compliant.
  • Corrosion-resistant external surfaces and readily solderable terminal leads.
  • ESD ratings: Human Body Model > 8 kV, Charged Device Model > 1000 V (Class C5).

Applications

  • High voltage, high frequency rectification.
  • Free-wheeling and protection diodes in various electronic systems.
  • Automotive applications requiring AEC-Q101 qualification.
  • Surface mount applications where compact size and weight are critical.
  • Power supplies, DC-DC converters, and other high-frequency power management systems.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the MURS320T3H?

    The maximum repetitive peak reverse voltage (VRRM) is 200 V.

  2. What is the maximum average forward rectified current for the MURS320T3H?

    The maximum average forward rectified current (IF(AV)) is 3.0 A at TL = 140°C and 4.0 A at TL = 130°C.

  3. What is the operating junction temperature range for the MURS320T3H?

    The operating junction temperature range is -65 to +175°C.

  4. Is the MURS320T3H AEC-Q101 qualified?
  5. What is the thermal resistance, junction-to-lead, for the MURS320T3H?

    The thermal resistance, junction-to-lead (RθJL), is 11°C/W.

  6. What is the maximum instantaneous forward voltage for the MURS320T3H?

    The maximum instantaneous forward voltage (VF) is 0.71 V at IF = 3.0 A and TJ = 150°C.

  7. What is the maximum reverse recovery time for the MURS320T3H?

    The maximum reverse recovery time (trr) is 25 ns at IF = 0.5 A, IR = 1.0 A, and Irr = 0.25 A.

  8. Is the MURS320T3H Pb-free and RoHS compliant?
  9. What is the package type of the MURS320T3H?

    The package type is SMC (DO-214AB) with J-bend leads.

  10. What are the ESD ratings for the MURS320T3H?

    The ESD ratings are Human Body Model > 8 kV and Charged Device Model > 1000 V (Class C5).

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):4A
Voltage - Forward (Vf) (Max) @ If:890 mV @ 4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):35 ns
Current - Reverse Leakage @ Vr:5 µA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AB, SMC
Supplier Device Package:SMC
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
366

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV50/AA
DD15S20LV50/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HE20/AA
DD26M20HE20/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S20000
DD26S20000
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20WV5S/AA
DD15S20WV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20JV5S/AA
DD15S20JV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC47W1S100V50
CBC47W1S100V50
CONN D-SUB RCPT 47POS CRIMP
DD26S2S500X
DD26S2S500X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V3X
DD26S200V3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V5X
DD26S2S0V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V5X
DD26S200V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HV50/AA
DD26S10HV50/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S20L00
DD26S20L00
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number MURS320T3H MURS360T3H MURS120T3H MURS320T3G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 600 V 200 V 200 V
Current - Average Rectified (Io) 4A 4A 2A 3A
Voltage - Forward (Vf) (Max) @ If 890 mV @ 4 A 1.28 V @ 4 A 875 mV @ 1 A 875 mV @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns 75 ns 35 ns 35 ns
Current - Reverse Leakage @ Vr 5 µA @ 200 V 10 µA @ 600 V 2 µA @ 200 V 5 µA @ 200 V
Capacitance @ Vr, F - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AB, SMC DO-214AB, SMC DO-214AA, SMB DO-214AB, SMC
Supplier Device Package SMC SMC SMB SMC
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

STPS1045D
STPS1045D
STMicroelectronics
DIODE SCHOTTKY 45V 10A TO220AC
BAT43WS RRG
BAT43WS RRG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOD323F
STPS1L60ZF
STPS1L60ZF
STMicroelectronics
DIODE SCHOTTKY 60V 1A SOD123F
NRVUS1MFA
NRVUS1MFA
onsemi
DIODE GEN PURP 1A1000V SOD123-2
1N4004GH
1N4004GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
MUR120RL
MUR120RL
onsemi
DIODE GEN PURP 200V 1A AXIAL
STPS2150RL
STPS2150RL
STMicroelectronics
DIODE SCHOTTKY 150V 2A DO15
MUR260RL
MUR260RL
onsemi
DIODE GEN PURP 600V 2A AXIAL
1N4004GPE-M3/54
1N4004GPE-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURPOSE DO-204AL
MUR160GP-AP
MUR160GP-AP
Micro Commercial Co
DIODE GPP SUPER FAST 1A DO-41
MBR120VLSFT1H
MBR120VLSFT1H
onsemi
DIODE SCHOTTKY
BAT54-7-G
BAT54-7-G
Diodes Incorporated
DIODE SCHOTTKY SOT23

Related Product By Brand

SZESD7461N2T5G
SZESD7461N2T5G
onsemi
TVS DIODE 16VWM 39VC 2XDFN
2N3773G
2N3773G
onsemi
TRANS NPN 140V 16A TO204
MC74HC4051ADWR2G
MC74HC4051ADWR2G
onsemi
IC MUX/DEMUX 8X1 16SOIC
MC74HCT125ADR2G
MC74HCT125ADR2G
onsemi
IC BUFFER NON-INVERT 6V 14SOIC
MC14528BDR2G
MC14528BDR2G
onsemi
IC MULTIVIBRATOR 90NS 16SOIC
FAN7385MX
FAN7385MX
onsemi
IC GATE DRVR HIGH-SIDE 14SOP
LC898121XA-MH
LC898121XA-MH
onsemi
IC MOTOR DRVR 2.6V-3.6V 40WLCSP
MC33275ST-5.0T3G
MC33275ST-5.0T3G
onsemi
IC REG LINEAR 5V 300MA SOT223
NCP160AMX330TBG
NCP160AMX330TBG
onsemi
IC REG LINEAR 3.3V 250MA 4XDFN
LM337TG
LM337TG
onsemi
IC REG LIN NEG ADJ 1.5A TO220
NCV4276CDS50R4G
NCV4276CDS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK-5
NCP163AFCT280T2G
NCP163AFCT280T2G
onsemi
IC REG LINEAR 2.8V 250MA 4WLCSP