MURS320T3H
  • Share:

onsemi MURS320T3H

Manufacturer No:
MURS320T3H
Manufacturer:
onsemi
Package:
Tray
Description:
DIODE GEN PURPOSE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MURS320T3H is a high-performance, ultra-fast recovery rectifier produced by onsemi. This component is designed for high voltage, high frequency rectification and is suitable for use as free-wheeling and protection diodes. It features a compact surface mount package, making it ideal for applications where space and weight are critical. The device is built with state-of-the-art epitaxial construction, oxide passivation, and metal overlay contact, ensuring reliable operation in demanding environments.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 200 V
Working Peak Reverse Voltage VRWM 200 V
Maximum DC Blocking Voltage VDC 200 V
Maximum Average Forward Rectified Current IF(AV) 3.0 @ TL = 140°C, 4.0 @ TL = 130°C A
Peak Forward Surge Current IFSM 125 A
Operating Junction Temperature TJ -65 to +175 °C
Maximum Instantaneous Forward Voltage VF 0.71 V @ IF = 3.0 A, TJ = 150°C V
Maximum Reverse Recovery Time trr 25 ns @ IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A ns
Thermal Resistance, Junction-to-Lead RθJL 11 °C/W

Key Features

  • Ultra-fast recovery time, making it suitable for high frequency applications.
  • Compact surface mount package (SMC - DO-214AB) with J-bend leads, ideal for automated handling.
  • High temperature glass passivated junction for reliable operation.
  • Low forward voltage drop (0.71 to 1.05 V max @ 3.0 A, TJ = 150°C).
  • AEC-Q101 qualified and PPAP capable for automotive and other critical applications.
  • Pb-free, halogen-free/BFR-free, and RoHS compliant.
  • Corrosion-resistant external surfaces and readily solderable terminal leads.
  • ESD ratings: Human Body Model > 8 kV, Charged Device Model > 1000 V (Class C5).

Applications

  • High voltage, high frequency rectification.
  • Free-wheeling and protection diodes in various electronic systems.
  • Automotive applications requiring AEC-Q101 qualification.
  • Surface mount applications where compact size and weight are critical.
  • Power supplies, DC-DC converters, and other high-frequency power management systems.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the MURS320T3H?

    The maximum repetitive peak reverse voltage (VRRM) is 200 V.

  2. What is the maximum average forward rectified current for the MURS320T3H?

    The maximum average forward rectified current (IF(AV)) is 3.0 A at TL = 140°C and 4.0 A at TL = 130°C.

  3. What is the operating junction temperature range for the MURS320T3H?

    The operating junction temperature range is -65 to +175°C.

  4. Is the MURS320T3H AEC-Q101 qualified?
  5. What is the thermal resistance, junction-to-lead, for the MURS320T3H?

    The thermal resistance, junction-to-lead (RθJL), is 11°C/W.

  6. What is the maximum instantaneous forward voltage for the MURS320T3H?

    The maximum instantaneous forward voltage (VF) is 0.71 V at IF = 3.0 A and TJ = 150°C.

  7. What is the maximum reverse recovery time for the MURS320T3H?

    The maximum reverse recovery time (trr) is 25 ns at IF = 0.5 A, IR = 1.0 A, and Irr = 0.25 A.

  8. Is the MURS320T3H Pb-free and RoHS compliant?
  9. What is the package type of the MURS320T3H?

    The package type is SMC (DO-214AB) with J-bend leads.

  10. What are the ESD ratings for the MURS320T3H?

    The ESD ratings are Human Body Model > 8 kV and Charged Device Model > 1000 V (Class C5).

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):4A
Voltage - Forward (Vf) (Max) @ If:890 mV @ 4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):35 ns
Current - Reverse Leakage @ Vr:5 µA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AB, SMC
Supplier Device Package:SMC
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
366

Please send RFQ , we will respond immediately.

Same Series
RD15S10HE20/AA
RD15S10HE20/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S2S5WV50/AA
DD15S2S5WV50/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z00/AA
DD15S20Z00/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HV50/AA
CBC13W3S10HV50/AA
CONN D-SUB RCPT 13POS CRIMP
CBC9W4S10HV3S/AA
CBC9W4S10HV3S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S200V3X
DD26S200V3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V50/AA
DD26S200V50/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V50
DD26S2S0V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HE0/AA
DD26S10HE0/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD44S32S60TX/AA
DD44S32S60TX/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S50TX/AA
DD44S32S50TX/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20J00
DD26S20J00
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number MURS320T3H MURS360T3H MURS120T3H MURS320T3G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 600 V 200 V 200 V
Current - Average Rectified (Io) 4A 4A 2A 3A
Voltage - Forward (Vf) (Max) @ If 890 mV @ 4 A 1.28 V @ 4 A 875 mV @ 1 A 875 mV @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns 75 ns 35 ns 35 ns
Current - Reverse Leakage @ Vr 5 µA @ 200 V 10 µA @ 600 V 2 µA @ 200 V 5 µA @ 200 V
Capacitance @ Vr, F - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AB, SMC DO-214AB, SMC DO-214AA, SMB DO-214AB, SMC
Supplier Device Package SMC SMC SMB SMC
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

1N4148UR-1
1N4148UR-1
Microchip Technology
DIODE GEN PURP 75V 200MA DO213AA
BAT46W-HE3-08
BAT46W-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 150MA SOD123
1N4007RLG
1N4007RLG
onsemi
DIODE GEN PURP 1000V 1A DO41
MURA160T3G
MURA160T3G
onsemi
DIODE GEN PURP 600V 1A SMA
STTH30L06G-TR
STTH30L06G-TR
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
BAS16-E3-08
BAS16-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOT23
BAS70L,315
BAS70L,315
Nexperia USA Inc.
DIODE SCHOT 70V 70MA DFN1006-2
NSVBAS21AHT1G
NSVBAS21AHT1G
onsemi
DIODE GEN PURP 250V 200MA SOD323
NRVBS360T3G
NRVBS360T3G
onsemi
DIODE SCHOTTKY 60V 3A SMC
BAT42-TAP
BAT42-TAP
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA DO35
MURD330T4G
MURD330T4G
onsemi
DIODE GEN PURP 300V 3A DPAK
RB751S-40GJTE61
RB751S-40GJTE61
Rohm Semiconductor
DIODE SCHOTTKY SMD

Related Product By Brand

MMBZ5244BLT1G
MMBZ5244BLT1G
onsemi
DIODE ZENER 14V 225MW SOT23-3
NJVMJD31T4G
NJVMJD31T4G
onsemi
TRANS NPN 40V 3A DPAK
FDG6332C
FDG6332C
onsemi
MOSFET N/P-CH 20V SC70-6
FCMT125N65S3
FCMT125N65S3
onsemi
MOSFET N-CH 650V 24A 4PQFN
MC33072DR2G
MC33072DR2G
onsemi
IC OPAMP JFET 2 CIRCUIT 8SOIC
MC74AC273DTR2G
MC74AC273DTR2G
onsemi
IC FF D-TYPE SNGL 8BIT 20TSSOP
MC74VHC259DR2G
MC74VHC259DR2G
onsemi
IC LATCH ADDRS 8BIT CMOS 16SOIC
MC78M05BDTT5G
MC78M05BDTT5G
onsemi
IC REG LINEAR 5V 500MA DPAK
NCV4276CDS50R4G
NCV4276CDS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK-5
NCV86601BDT50RKG
NCV86601BDT50RKG
onsemi
IC REG LINEAR 5V 150MA DPAK-5
CS8190ENF16G
CS8190ENF16G
onsemi
IC DRIVER 16DIP
FOD817A3SD
FOD817A3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD