MURF1620CT
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onsemi MURF1620CT

Manufacturer No:
MURF1620CT
Manufacturer:
onsemi
Package:
Tube
Description:
DIODE ARRAY GP 200V 8A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MURF1620CT is a high-performance, ultrafast rectifier designed and manufactured by onsemi. This device is part of a series of switch-mode power rectifiers that are optimized for use in switching power supplies, inverters, and as free-wheeling diodes. The MURF1620CT is known for its high operating junction temperature, ultrafast recovery times, and high voltage capability, making it a reliable choice for demanding power applications.

Key Specifications

Parameter Symbol Units Value
Maximum Repetitive Peak Reverse Voltage VRRM V 600
Maximum RMS Voltage V_RMS V 420
Maximum DC Blocking Voltage V_DC V 600
Maximum Average Forward Rectified Current I_F(AV) A 16
Peak Forward Surge Current (8.3 ms single half sine-wave) I_FSM A 100
Maximum Instantaneous Forward Voltage @ IF=8 A, TA=25°C V_F V 0.975
Maximum Reverse Current @ TA=25°C I_R μA 5
Maximum Reverse Recovery Time T_rr ns 35 / 60
Operating Junction Temperature T_J °C -55 to +150
Storage Temperature Range T_STG °C -55 to +150

Key Features

  • Ultrafast 35 and 60 nanosecond recovery times, ensuring minimal switching losses and high efficiency in power applications.
  • High operating junction temperature of up to 175°C, allowing for reliable operation in demanding thermal environments.
  • High voltage capability up to 600 V, making it suitable for a wide range of power supply and inverter applications.
  • Low leakage current specified at 150°C case temperature, reducing standby power losses.
  • Current derating at both case and ambient temperatures to ensure safe operation under various conditions.
  • Epoxy package that meets UL 94 V-0 flammability classification, ensuring safety and reliability.
  • High temperature glass passivated junction for enhanced reliability and performance.
  • ESD rating: Human Body Model = 3B (> 8 kV) and Machine Model = C (> 400 V).

Applications

The MURF1620CT is designed for use in various high-performance power applications, including:

  • Switching power supplies: Due to its ultrafast recovery times and high voltage capability, it is ideal for high-efficiency power supply designs.
  • Inverters: The device's high operating junction temperature and low leakage current make it suitable for inverter applications.
  • Free-wheeling diodes: Its fast recovery times and high surge capability make it an excellent choice for free-wheeling diode applications.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the MURF1620CT?

    The maximum repetitive peak reverse voltage is 600 V.

  2. What are the ultrafast recovery times of the MURF1620CT?

    The recovery times are 35 and 60 nanoseconds).

  3. What is the operating junction temperature range of the MURF1620CT?

    The operating junction temperature range is -55°C to +150°C).

  4. What is the maximum average forward rectified current of the MURF1620CT?

    The maximum average forward rectified current is 16 A).

  5. Does the MURF1620CT meet any specific safety standards?

    Yes, the epoxy package meets UL 94 V-0 flammability classification).

  6. What is the ESD rating of the MURF1620CT?

    The ESD rating is Human Body Model = 3B (> 8 kV) and Machine Model = C (> 400 V)).

  7. What are the typical applications of the MURF1620CT?

    The typical applications include switching power supplies, inverters, and free-wheeling diodes).

  8. What is the package type of the MURF1620CT?

    The package type is TO-220AB).

  9. Is the MURF1620CT lead-free?

    Yes, the MURF1620CT is a lead-free device).

  10. What is the maximum instantaneous forward voltage of the MURF1620CT at IF=8 A and TA=25°C?

    The maximum instantaneous forward voltage is 0.975 V).

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io) (per Diode):8A
Voltage - Forward (Vf) (Max) @ If:975 mV @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):35 ns
Current - Reverse Leakage @ Vr:5 µA @ 200 V
Operating Temperature - Junction:-65°C ~ 150°C
Mounting Type:Through Hole
Package / Case:TO-220-3 Full Pack
Supplier Device Package:TO-220FP
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Same Series
MURF1620CTG
MURF1620CTG
DIODE ARRAY GP 200V 8A TO220FP

Similar Products

Part Number MURF1620CT MURF1620CTG MURF1640CT MURF1660CT MUR1620CT MURB1620CT
Manufacturer onsemi onsemi Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Active Active Active Obsolete Obsolete
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V 400 V 600 V 200 V 200 V
Current - Average Rectified (Io) (per Diode) 8A 8A 16A 16A 8A 8A
Voltage - Forward (Vf) (Max) @ If 975 mV @ 8 A 975 mV @ 8 A 1.3 V @ 8 A 1.5 V @ 8 A 950 mV @ 8 A 975 mV @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns 35 ns 50 ns 50 ns 35 ns 35 ns
Current - Reverse Leakage @ Vr 5 µA @ 200 V 5 µA @ 200 V 10 µA @ 400 V 10 µA @ 600 V 5 µA @ 200 V 5 µA @ 200 V
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -65°C ~ 175°C -65°C ~ 175°C
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Surface Mount
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack, Isolated Tab TO-220-3 Full Pack, Isolated Tab TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-220FP TO-220FP ITO-220AB ITO-220AB TO-220-3 TO-263AB (D²PAK)

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