MBRF30H100CTG
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onsemi MBRF30H100CTG

Manufacturer No:
MBRF30H100CTG
Manufacturer:
onsemi
Package:
Bulk
Description:
DIODE ARRAY SCHOTTKY 100V TO220F
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBRF30H100CTG is a high-performance Schottky barrier rectifier produced by onsemi. This component is designed for high-efficiency and low power loss applications, making it suitable for various power management and rectification needs. The device features a TO-220FP package and is lead-free, ensuring compliance with environmental regulations.

Key Specifications

CharacteristicSymbolValueUnit
Peak Repetitive Reverse VoltageVRRM100V
Average Rectified Forward Current (Per Device)IF(AV)30A
Peak Repetitive Forward CurrentIFM30A
Nonrepetitive Peak Surge CurrentIFSM250A
Operating Junction TemperatureTJ+175°C
Storage TemperatureTstg-65 to +175°C
Maximum Instantaneous Forward Voltage (iF = 15 A, TJ = 125°C)vF0.67V
Maximum Thermal Resistance (Junction-to-Ambient)RθJA75°C/W

Key Features

  • Low Forward Voltage: 0.67 V @ 125°C
  • Low Power Loss/High Efficiency
  • High Surge Capacity
  • 175°C Operating Junction Temperature
  • 30 A Total (15 A Per Diode Leg)
  • Pb-Free Device
  • Guardring for overvoltage protection
  • Low leakage current

Applications

  • Power Supply - Output Rectification
  • Power Management
  • Instrumentation

Q & A

  1. What is the peak repetitive reverse voltage of the MBRF30H100CTG? The peak repetitive reverse voltage is 100 V.
  2. What is the average rectified forward current for the MBRF30H100CTG? The average rectified forward current is 30 A.
  3. What is the maximum operating junction temperature for this device? The maximum operating junction temperature is +175°C.
  4. Is the MBRF30H100CTG a Pb-Free device? Yes, the MBRF30H100CTG is a Pb-Free device.
  5. What is the typical forward voltage at 125°C for this rectifier? The typical forward voltage at 125°C is 0.67 V.
  6. What are the common applications of the MBRF30H100CTG? Common applications include power supply output rectification, power management, and instrumentation.
  7. What is the maximum nonrepetitive peak surge current for the MBRF30H100CTG? The maximum nonrepetitive peak surge current is 250 A.
  8. What is the storage temperature range for this device? The storage temperature range is -65 to +175°C.
  9. What package type is the MBRF30H100CTG available in? The MBRF30H100CTG is available in the TO-220FP package.
  10. What is the maximum thermal resistance (junction-to-ambient) for the MBRF30H100CTG? The maximum thermal resistance (junction-to-ambient) is 75°C/W.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io) (per Diode):15A
Voltage - Forward (Vf) (Max) @ If:800 mV @ 15 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:4.5 µA @ 100 V
Operating Temperature - Junction:175°C (Max)
Mounting Type:Through Hole
Package / Case:TO-220-3 Full Pack
Supplier Device Package:TO-220FP
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Same Series
MBR30H100CTG
MBR30H100CTG
DIODE ARRAY SCHOTTKY 100V TO220
MBR30H100CT
MBR30H100CT
DIODE ARRAY SCHOTTKY 100V TO220

Similar Products

Part Number MBRF30H100CTG MBRF30H150CTG
Manufacturer onsemi onsemi
Product Status Active Obsolete
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode
Diode Type Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 100 V 150 V
Current - Average Rectified (Io) (per Diode) 15A 15A
Voltage - Forward (Vf) (Max) @ If 800 mV @ 15 A 1.11 V @ 15 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 4.5 µA @ 100 V 60 µA @ 150 V
Operating Temperature - Junction 175°C (Max) -20°C ~ 150°C
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack
Supplier Device Package TO-220FP TO-220FP

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