Overview
The MBRD1035CTLT4G is a Schottky power rectifier produced by onsemi, designed for high-efficiency and reliability in various power management applications. This component employs the Schottky Barrier principle in a large area metal-to-silicon power diode, featuring state-of-the-art geometry with epitaxial construction, oxide passivation, and metal overlay contact. It is ideally suited for low voltage, high frequency switching power supplies, free wheeling diodes, and polarity protection diodes.
Key Specifications
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Peak Repetitive Reverse Voltage | VRRM | 35 | V |
| Average Rectified Forward Current (TC = 115°C) | IO | 10 | A |
| Peak Repetitive Forward Current (Square Wave, Duty = 0.5, TC = 115°C) | IFRM | 10 | A |
| Non-Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) | IFSM | 50 | A |
| Storage / Operating Case Temperature | Tstg, Tc | −55 to +150 | °C |
| Operating Junction Temperature | TJ | −55 to +150 | °C |
| Voltage Rate of Change (Rated VR, TJ = 25°C) | dv/dt | 10,000 | V/μs |
| Thermal Resistance, Junction-to-Case | RJC | 3.0 | °C/W |
| Thermal Resistance, Junction-to-Ambient | RJA | 137 | °C/W |
| Maximum Instantaneous Forward Voltage (IF = 10 Amps, TJ = 25°C) | VF | 0.47 | V |
| Maximum Instantaneous Reverse Current (VR = 35 V, TJ = 25°C) | IR | 2.0 | mA |
Key Features
- Highly stable oxide passivated junction
- Guardring for stress protection
- Matched dual die construction for high current output when paralleled
- High dv/dt capability
- Short heat sink tap manufactured, not sheared
- Very low forward voltage drop
- Epoxy meets UL 94 V-0 @ 0.125 in
- AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements
- Pb-free, halogen-free/BFR-free, and RoHS compliant
Applications
The MBRD1035CTLT4G is suitable for a variety of applications, including:
- Low voltage, high frequency switching power supplies
- Free wheeling diodes
- Polarity protection diodes
- Automotive and industrial power management systems
Q & A
- What is the peak repetitive reverse voltage of the MBRD1035CTLT4G?
The peak repetitive reverse voltage is 35 V.
- What is the average rectified forward current at TC = 115°C?
The average rectified forward current is 10 A.
- What is the maximum instantaneous forward voltage at IF = 10 Amps and TJ = 25°C?
The maximum instantaneous forward voltage is 0.47 V.
- What is the thermal resistance from junction to case?
The thermal resistance from junction to case is 3.0 °C/W.
- Is the MBRD1035CTLT4G RoHS compliant?
- What are the storage and operating case temperature ranges?
The storage and operating case temperature ranges are −55 to +150 °C.
- What is the voltage rate of change at rated VR and TJ = 25°C?
The voltage rate of change is 10,000 V/μs.
- Is the MBRD1035CTLT4G suitable for automotive applications?
- What is the maximum non-repetitive peak surge current?
The maximum non-repetitive peak surge current is 50 A.
- What is the epoxy rating for the MBRD1035CTLT4G?
The epoxy meets UL 94 V-0 @ 0.125 in.
