Overview
The FAN7392N is a monolithic high- and low-side gate drive IC produced by ON Semiconductor. This device is designed to drive high-speed MOSFETs and IGBTs that operate up to +600V. It features a buffered output stage with all NMOS transistors, providing high pulse current driving capability and minimizing cross-conduction. The IC utilizes ON Semiconductor’s high-voltage process and common-mode noise canceling techniques to ensure stable operation under high dv/dt noise conditions. An advanced level-shift circuit enables high-side gate driver operation up to VS = -9.8V (typical) for VBS = 15V. The logic inputs are compatible with standard CMOS or LSTTL output, supporting logic levels down to 3.3V. The device also includes a UVLO circuit to prevent malfunction when VCC and VBS are below the specified threshold voltage.
Key Specifications
Parameter | Min | Max | Unit |
---|---|---|---|
High-Side Floating Supply Voltage | -0.3 | 625 | V |
Low-Side Supply Voltage | -0.3 | 25 | V |
Allowable Offset Voltage Slew Rate | 50 | ns | |
Power Dissipation | 1.6 | W | |
Thermal Resistance | 75 | C/W | |
Maximum Junction Temperature | 150 | C | |
Storage Temperature | -55 | 150 | C |
Sourcing/Sinking Current Driving Capability | 3A/3A | ||
Logic Supply (VDD) Range | 3.3 | 20 | V |
Key Features
- Buffered output stage with all NMOS transistors for high pulse current driving capability and minimum cross-conduction.
- High-voltage process and common-mode noise canceling techniques for stable operation under high dv/dt noise conditions.
- Advanced level-shift circuit for high-side gate driver operation up to VS = -9.8V (typical) for VBS = 15V.
- Logic inputs compatible with standard CMOS or LSTTL output, down to 3.3V logic.
- UVLO circuit to prevent malfunction when VCC and VBS are lower than the specified threshold voltage.
- Cycle-by-cycle edge-triggered shutdown logic and matched propagation delay for both channels.
- Outputs in-phase with input signals.
- Available in 14-DIP and 16-SOP (Wide) packages.
Applications
- Half- and full-bridge inverters.
- Switching-mode power supplies.
- High-power DC-DC converters.
- PDP TVs.
- Motion control systems.
- Electric bikes and other industrial applications).
Q & A
- What is the maximum voltage that the FAN7392N can drive?
The FAN7392N can drive high-speed MOSFETs and IGBTs that operate up to +600V.
- What are the key features of the FAN7392N's output stage?
The output stage is buffered with all NMOS transistors, designed for high pulse current driving capability and minimum cross-conduction.
- How does the FAN7392N handle high dv/dt noise?
The device uses high-voltage process and common-mode noise canceling techniques to ensure stable operation under high dv/dt noise conditions.
- What is the logic input compatibility of the FAN7392N?
The logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic.
- What protection does the FAN7392N have against low supply voltages?
The device includes a UVLO circuit to prevent malfunction when VCC and VBS are lower than the specified threshold voltage.
- What are the typical applications of the FAN7392N?
The FAN7392N is suitable for half- and full-bridge inverters, switching-mode power supplies, high-power DC-DC converters, PDP TVs, motion control systems, electric bikes, and other industrial applications.
- What are the available package types for the FAN7392N?
The device is available in 14-DIP and 16-SOP (Wide) packages.
- How does the FAN7392N handle negative VS transients?
The device has a negative VS transient performance curve, but it is recommended to minimize these transients through careful PCB layout and component selection.
- What is the recommended PCB layout for minimizing parasitic elements?
Direct tracks between switches with no loops or deviations, avoiding interconnect links, reducing lead-inductance, co-locating power switches, and minimizing noise coupling are recommended.
- What components are recommended for the bootstrap circuit?
A low-ESR capacitor such as a ceramic capacitor for the bootstrap capacitor and a fast recovery or ultra-fast recovery diode can be used if necessary.