Overview
The BC858BWT1 is a general-purpose PNP silicon transistor produced by onsemi. It is designed for low power surface mount applications and is housed in the SC−70/SOT−323 package. This transistor is suitable for various amplifier applications due to its robust electrical characteristics and compact design.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -30 | V |
| Collector-Base Voltage | VCBO | -50 | V |
| Emitter-Base Voltage | VEBO | -5.0 | V |
| Collector Current - Continuous | IC | -100 | mAdc |
| Collector Current - Peak (1 ms pulse) | IC | -200 | mAdc |
| DC Current Gain (IC = -10 mA, VCE = -5.0 V) | hFE | 220 - 420 | |
| Collector-Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) | VCE(sat) | -0.3 - -0.65 | V |
| Base-Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) | VBE(sat) | -0.7 - -0.9 | V |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
| Total Device Dissipation (FR-5 Board, TA = 25°C) | PD | 150 | mW |
| Thermal Resistance, Junction-to-Ambient | RθJA | 328 | °C/W |
Key Features
- Pb-Free, Halogen Free/BFR Free, and RoHS Compliant packages available.
- AEC-Q101 Qualified and PPAP Capable, making them suitable for automotive and other applications requiring unique site and control change requirements.
- Compact SC−70/SOT−323 package designed for low power surface mount applications.
- High DC current gain (hFE) ranging from 220 to 420 at IC = -10 mA and VCE = -5.0 V.
- Low collector-emitter saturation voltage (VCE(sat)) and base-emitter saturation voltage (VBE(sat)).
- Wide junction and storage temperature range (-55 to +150°C).
Applications
The BC858BWT1 transistor is versatile and can be used in a variety of general-purpose amplifier applications, including:
- Low power amplifiers.
- Switching circuits.
- Automotive electronics.
- Consumer electronics.
- Industrial control systems.
Q & A
- What is the collector-emitter voltage rating for the BC858BWT1 transistor?
The collector-emitter voltage rating for the BC858BWT1 transistor is -30 V.
- What is the maximum continuous collector current for the BC858BWT1?
The maximum continuous collector current for the BC858BWT1 is -100 mA.
- What is the DC current gain (hFE) of the BC858BWT1 transistor?
The DC current gain (hFE) of the BC858BWT1 transistor ranges from 220 to 420 at IC = -10 mA and VCE = -5.0 V.
- Is the BC858BWT1 transistor RoHS compliant?
Yes, the BC858BWT1 transistor is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
- What is the junction and storage temperature range for the BC858BWT1 transistor?
The junction and storage temperature range for the BC858BWT1 transistor is -55 to +150°C.
- What package type is the BC858BWT1 transistor housed in?
The BC858BWT1 transistor is housed in the SC−70/SOT−323 package.
- Is the BC858BWT1 suitable for automotive applications?
Yes, the BC858BWT1 is AEC-Q101 Qualified and PPAP Capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
- What is the thermal resistance, junction-to-ambient (RθJA) for the BC858BWT1?
The thermal resistance, junction-to-ambient (RθJA) for the BC858BWT1 is 328 °C/W.
- What is the maximum total device dissipation for the BC858BWT1 on an FR-5 board at 25°C?
The maximum total device dissipation for the BC858BWT1 on an FR-5 board at 25°C is 150 mW.
- What are some typical applications of the BC858BWT1 transistor?
The BC858BWT1 transistor can be used in low power amplifiers, switching circuits, automotive electronics, consumer electronics, and industrial control systems.
