Overview
The TEA1610T/N5,118 is a monolithic integrated circuit produced by NXP USA Inc., implemented in a high-voltage Diffusion Metal Oxide Semiconductor (DMOS) process. This IC is designed as a high-voltage controller for zero-voltage switching resonant converters. It provides the drive function for two discrete power MOSFETs in a half-bridge configuration, making it highly versatile for various applications involving different mains voltages.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VHS (high side driver voltage) | 0 - 600 V | - | - | 600 | V |
| IGH(source) (high side output source current) | VDD(F) = 13 V; VSH = 0 V; VGH = 0 V | -135 | -180 | -225 | mA |
| IGH(sink) (high side output sink current) | VDD(F) = 13 V; VSH = 0 V; VGH = 13 V | - | - | -300 | mA |
| IGL(source) (low side output source current) | VGL = 0 V | -135 | -180 | -225 | mA |
| IGL(sink) (low side output sink current) | VGL = 14 V | - | - | -300 | mA |
| fbridge(max) (maximum bridge frequency) | CF = 100 pF; IIFS = 1 mA; IIRS = 200 µA | 450 | 500 | 550 | kHz |
| VDD(initial) (supply voltage for defined driver output low side on; high side off) | - | 4 | 5 | V | |
| VDD(start) (start oscillator voltage) | - | 12.9 | 13.4 | 13.9 | V |
| VDD(stop) (stop oscillator voltage) | - | 9.0 | 9.4 | 9.8 | V |
| VI(offset) (input offset voltage) | VI(CM) = 1 V; IVCO = −10 mA | -2 | 0 | +2 | mV |
| gm (transconductance) | VI(CM) = 1 V; source only | - | - | 330 | µA/mV |
| Ao (open loop gain) | VI(CM) = 1 V | - | - | 70 | dB |
| GB (gain bandwidth product) | VI(CM) = 1 V | - | - | 5 | MHz |
Key Features
- High-voltage controller for zero-voltage switching resonant converters.
- Drive function for two discrete power MOSFETs in a half-bridge configuration.
- Level-shift circuit and oscillator with accurately-programmable frequency range.
- Latched shut-down function and transconductance error amplifier.
- Guarantees an accurate 50% switching duty factor through a divide-by-two flip-flop.
- Flexible design enabling a broad range of applications for different mains voltages.
Applications
The TEA1610T/N5,118 is suitable for a variety of applications, including but not limited to:
- Resonant power converters.
- High-voltage power supplies.
- Switch-mode power supplies requiring zero-voltage switching.
- Industrial and consumer electronics where efficient and reliable power conversion is critical.
Q & A
- What is the TEA1610T/N5,118 used for? The TEA1610T/N5,118 is used as a high-voltage controller for zero-voltage switching resonant converters.
- What type of process is the TEA1610T/N5,118 implemented in? It is implemented in a high-voltage Diffusion Metal Oxide Semiconductor (DMOS) process.
- What is the maximum bridge frequency of the TEA1610T/N5,118? The maximum bridge frequency is between 450 kHz and 550 kHz.
- What is the start oscillator voltage for the TEA1610T/N5,118? The start oscillator voltage is between 12.9 V and 13.9 V.
- Does the TEA1610T/N5,118 include a level-shift circuit? Yes, it includes a level-shift circuit.
- What is the typical transconductance of the TEA1610T/N5,118? The typical transconductance is 330 µA/mV.
- Is the TEA1610T/N5,118 still in production? No, the TEA1610T/N5,118 is no longer manufactured.
- What package types are available for the TEA1610T/N5,118? It is available in a DIP16 plastic dual in-line package and Tape & Reel (TR) packaging.
- What are some common applications of the TEA1610T/N5,118? Common applications include resonant power converters, high-voltage power supplies, and switch-mode power supplies requiring zero-voltage switching.
- How does the TEA1610T/N5,118 ensure an accurate 50% switching duty factor? It ensures an accurate 50% switching duty factor through a divide-by-two flip-flop.
