Overview
The PMCXB900UEL is a 20 V, complementary N/P-channel Trench MOSFET produced by Nexperia, which was previously part of NXP Semiconductors. This device is designed in an enhancement mode Field-Effect Transistor (FET) configuration and is packaged in a leadless ultra-small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. The Trench MOSFET technology used in this component offers several key benefits, including low leakage current and a very low threshold voltage, making it suitable for portable applications.
Key Specifications
| Parameter | Value |
|---|---|
| Type Number | PMCXB900UEL |
| Package | DFN1010B-6 (SOT1216) |
| Channel Type | N/P |
| Number of Transistors | 2 |
| VDS [max] (V) | 20 |
| VGS [max] (V) | 8 |
| RDSon [max] @ VGS = 4.5 V; @25°C (mΩ) | 620 |
| RDSon [max] @ VGS = 2.5 V (mΩ) | 850 |
| VESD (kV) | > 1 kV HBM |
| Tj [max] (°C) | 150 |
| ID [max] (A) | 0.6 |
| QGD [typ] (nC) | 0.1 |
| QG(tot) [typ] @ VGS = 4.5 V (nC) | 0.4 |
| Ptot [max] (W) | 0.265 |
| VGSth [typ] (V) | 0.7 |
| Automotive Qualified | No |
| Ciss [typ] (pF) | 21.3 |
| Coss [typ] (pF) | 5.4 |
Key Features
- Low Leakage Current: Ensures minimal current loss, enhancing overall efficiency.
- Trench MOSFET Technology: Provides superior performance with lower on-resistance and faster switching times.
- Very Low Threshold Voltage: VGS(th) = 0.7 V, ideal for portable applications where low power consumption is critical.
- Leadless Ultra-Small Package: DFN1010B-6 (SOT1216) package measuring 1.1 × 1.0 × 0.37 mm, suitable for space-constrained designs.
- ESD Protection: Typically > 1 kV HBM, offering robust protection against electrostatic discharge.
Applications
- Relay Driver: Suitable for driving relays in various electronic systems.
- High-Speed Line Driver: Ideal for high-speed signal transmission applications.
- Level Shifter: Can be used to shift voltage levels in digital circuits.
- Power Management in Battery-Driven Portables: Optimized for use in battery-powered devices to manage power efficiently.
Q & A
- What is the maximum drain-source voltage (VDS) of the PMCXB900UEL?
The maximum drain-source voltage (VDS) is 20 V.
- What is the package type of the PMCXB900UEL?
The package type is DFN1010B-6 (SOT1216).
- What is the typical threshold voltage (VGS(th)) of the PMCXB900UEL?
The typical threshold voltage (VGS(th)) is 0.7 V.
- Does the PMCXB900UEL have ESD protection?
Yes, it typically has ESD protection greater than 1 kV HBM.
- What are the dimensions of the PMCXB900UEL package?
The package dimensions are 1.1 × 1.0 × 0.37 mm.
- What is the maximum junction temperature (Tj) of the PMCXB900UEL?
The maximum junction temperature (Tj) is 150°C.
- What is the maximum drain current (ID) of the PMCXB900UEL?
The maximum drain current (ID) is 0.6 A.
- Is the PMCXB900UEL automotive qualified?
No, it is not automotive qualified.
- What are some common applications of the PMCXB900UEL?
Common applications include relay drivers, high-speed line drivers, level shifters, and power management in battery-driven portables.
- What technology is used in the PMCXB900UEL?
The PMCXB900UEL uses Trench MOSFET technology.
