PBSM5240PFH115
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NXP USA Inc. PBSM5240PFH115

Manufacturer No:
PBSM5240PFH115
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
NOW NEXPERIA PBSM5240PFH SMALL S
Delivery:
Payment:
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Product Introduction

Overview

The PBSM5240PFH115 is an N-Channel MOSFET produced by NXP USA Inc., now operating under the brand name Nexperia. This component is part of the SOT-1118 package family and is designed for high-performance applications requiring low on-state resistance and high current handling capabilities.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 40 V
VGS (Gate-Source Voltage) ±20 V
ID (Continuous Drain Current) 3.5 A
RDS(on) (On-State Resistance) 15
Ptot (Total Power Dissipation) 1.25 W
Tj (Junction Temperature) -55 to 150 °C
Package SOT-1118
Status Active

Key Features

  • Low On-State Resistance: The PBSM5240PFH115 features a low RDS(on) of 15 mΩ, making it suitable for high-efficiency applications.
  • High Current Handling: With a continuous drain current (ID) of 3.5 A, this MOSFET is capable of handling high current loads.
  • Compact Package: The SOT-1118 package is compact and suitable for space-constrained designs.
  • Wide Operating Temperature Range: The component can operate over a junction temperature range of -55°C to 150°C.
  • RoHS Compliant: The PBSM5240PFH115 is RoHS compliant, making it environmentally friendly.

Applications

  • Power Management: Suitable for power management in various electronic devices, including DC-DC converters and power supplies.
  • Motor Control: Can be used in motor control circuits due to its high current handling and low on-state resistance.
  • Automotive Systems: Applicable in automotive systems where high reliability and efficiency are required.
  • Industrial Automation: Used in industrial automation for controlling high-current loads efficiently.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the PBSM5240PFH115?

    The maximum drain-source voltage (VDS) is 40 V.

  2. What is the continuous drain current (ID) of this MOSFET?

    The continuous drain current (ID) is 3.5 A.

  3. What is the on-state resistance (RDS(on)) of the PBSM5240PFH115?

    The on-state resistance (RDS(on)) is 15 mΩ.

  4. What is the package type of the PBSM5240PFH115?

    The package type is SOT-1118.

  5. Is the PBSM5240PFH115 RoHS compliant?

    Yes, the PBSM5240PFH115 is RoHS compliant.

  6. What is the operating junction temperature range of this MOSFET?

    The operating junction temperature range is -55°C to 150°C.

  7. What are some common applications of the PBSM5240PFH115?

    Common applications include power management, motor control, automotive systems, and industrial automation.

  8. Who is the manufacturer of the PBSM5240PFH115?

    The manufacturer is NXP USA Inc., now operating under the brand name Nexperia.

  9. What is the total power dissipation (Ptot) of this MOSFET?

    The total power dissipation (Ptot) is 1.25 W.

  10. What is the gate-source voltage (VGS) range for the PBSM5240PFH115?

    The gate-source voltage (VGS) range is ±20 V.

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