Overview
The NX3020NAKV,115 is a dual N-channel Trench MOSFET produced by Nexperia, not NXP USA Inc., although both companies are involved in the semiconductor industry. This component is designed for high-performance applications requiring low on-resistance and fast switching times. It is packaged in a small SOT-563 or SOT-666 Surface-Mounted Device (SMD) package, making it suitable for space-constrained designs.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Type Number | NX3020NAKV,115 | |
Package | SOT-563, SOT-666 | |
Channel Type | Dual N-channel | |
Drain-Source Voltage (VDS) | 30 | V |
Gate-Source Voltage (VGS) | 20 | V |
On-Resistance (RDSon) @ VGS = 10 V | 2.7 | mΩ |
Continuous Drain Current (ID) | 200 | mA |
Threshold Voltage (VGS(th)) | 1.2 | V |
Operating Temperature | -55°C to 150°C | °C |
ESD Protection | 1000 V | kV |
Gate Charge (QG) @ VGS = 4.5 V | 0.44 | nC |
Key Features
- Fast Switching: The NX3020NAKV,115 features very fast switching times, making it suitable for high-frequency applications.
- Trench MOSFET Technology: Utilizes Trench MOSFET technology for low on-resistance and high efficiency.
- ESD Protection: Offers 1000 V ESD protection, enhancing the component's robustness against electrostatic discharge.
- Low Threshold Voltage: A low threshold voltage of 1.2 V allows for easy switching and control.
- Compact Package: Available in SOT-563 and SOT-666 packages, ideal for space-constrained designs.
- Relay Driver and High-Speed Line Driver: Suitable for use as a relay driver and high-speed line driver due to its fast switching capabilities.
- Low-Side Load Switch: Can be used as a low-side load switch in various applications.
Applications
- Power Management: Used in power management circuits due to its low on-resistance and fast switching times.
- Relay Drivers: Suitable for driving relays in automotive, industrial, and consumer electronics.
- High-Speed Line Drivers: Ideal for high-speed line driving applications requiring fast switching and low on-resistance.
- Low-Side Load Switches: Used in low-side load switch applications where efficient and fast switching is required.
- General Switching Circuits: Can be used in various general switching circuits where high performance and reliability are needed.
Q & A
- What is the maximum drain-source voltage (VDS) of the NX3020NAKV,115?
The maximum drain-source voltage (VDS) is 30 V.
- What is the typical threshold voltage (VGS(th)) of this MOSFET?
The typical threshold voltage (VGS(th)) is 1.2 V.
- What is the continuous drain current (ID) rating of the NX3020NAKV,115?
The continuous drain current (ID) rating is 200 mA.
- What is the on-resistance (RDSon) at VGS = 10 V?
The on-resistance (RDSon) at VGS = 10 V is 2.7 mΩ.
- What is the ESD protection rating of this MOSFET?
The ESD protection rating is 1000 V.
- What are the typical operating temperatures for the NX3020NAKV,115?
The operating temperatures range from -55°C to 150°C.
- Is the NX3020NAKV,115 RoHS compliant?
Yes, the NX3020NAKV,115 is RoHS3 compliant.
- What are some common applications for the NX3020NAKV,115?
Common applications include power management, relay drivers, high-speed line drivers, and low-side load switches.
- What package types are available for the NX3020NAKV,115?
The component is available in SOT-563 and SOT-666 packages.
- How does the Trench MOSFET technology benefit this component?
The Trench MOSFET technology provides low on-resistance and high efficiency, making it suitable for high-performance applications.