NX3020NAKV115
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NXP USA Inc. NX3020NAKV115

Manufacturer No:
NX3020NAKV115
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
NOW NEXPERIA NX3020NAKV - SMALL
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Product Introduction

Overview

The NX3020NAKV,115 is a dual N-channel Trench MOSFET produced by Nexperia, not NXP USA Inc., although both companies are involved in the semiconductor industry. This component is designed for high-performance applications requiring low on-resistance and fast switching times. It is packaged in a small SOT-563 or SOT-666 Surface-Mounted Device (SMD) package, making it suitable for space-constrained designs.

Key Specifications

Parameter Value Unit
Type Number NX3020NAKV,115
Package SOT-563, SOT-666
Channel Type Dual N-channel
Drain-Source Voltage (VDS) 30 V
Gate-Source Voltage (VGS) 20 V
On-Resistance (RDSon) @ VGS = 10 V 2.7
Continuous Drain Current (ID) 200 mA
Threshold Voltage (VGS(th)) 1.2 V
Operating Temperature -55°C to 150°C °C
ESD Protection 1000 V kV
Gate Charge (QG) @ VGS = 4.5 V 0.44 nC

Key Features

  • Fast Switching: The NX3020NAKV,115 features very fast switching times, making it suitable for high-frequency applications.
  • Trench MOSFET Technology: Utilizes Trench MOSFET technology for low on-resistance and high efficiency.
  • ESD Protection: Offers 1000 V ESD protection, enhancing the component's robustness against electrostatic discharge.
  • Low Threshold Voltage: A low threshold voltage of 1.2 V allows for easy switching and control.
  • Compact Package: Available in SOT-563 and SOT-666 packages, ideal for space-constrained designs.
  • Relay Driver and High-Speed Line Driver: Suitable for use as a relay driver and high-speed line driver due to its fast switching capabilities.
  • Low-Side Load Switch: Can be used as a low-side load switch in various applications.

Applications

  • Power Management: Used in power management circuits due to its low on-resistance and fast switching times.
  • Relay Drivers: Suitable for driving relays in automotive, industrial, and consumer electronics.
  • High-Speed Line Drivers: Ideal for high-speed line driving applications requiring fast switching and low on-resistance.
  • Low-Side Load Switches: Used in low-side load switch applications where efficient and fast switching is required.
  • General Switching Circuits: Can be used in various general switching circuits where high performance and reliability are needed.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the NX3020NAKV,115?

    The maximum drain-source voltage (VDS) is 30 V.

  2. What is the typical threshold voltage (VGS(th)) of this MOSFET?

    The typical threshold voltage (VGS(th)) is 1.2 V.

  3. What is the continuous drain current (ID) rating of the NX3020NAKV,115?

    The continuous drain current (ID) rating is 200 mA.

  4. What is the on-resistance (RDSon) at VGS = 10 V?

    The on-resistance (RDSon) at VGS = 10 V is 2.7 mΩ.

  5. What is the ESD protection rating of this MOSFET?

    The ESD protection rating is 1000 V.

  6. What are the typical operating temperatures for the NX3020NAKV,115?

    The operating temperatures range from -55°C to 150°C.

  7. Is the NX3020NAKV,115 RoHS compliant?

    Yes, the NX3020NAKV,115 is RoHS3 compliant.

  8. What are some common applications for the NX3020NAKV,115?

    Common applications include power management, relay drivers, high-speed line drivers, and low-side load switches.

  9. What package types are available for the NX3020NAKV,115?

    The component is available in SOT-563 and SOT-666 packages.

  10. How does the Trench MOSFET technology benefit this component?

    The Trench MOSFET technology provides low on-resistance and high efficiency, making it suitable for high-performance applications.

Product Attributes

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