Overview
The BAW56W/DG/B3115 is a high-speed switching diode produced by NXP USA Inc. (now part of Nexperia). This component is encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package, making it ideal for applications where space is limited. The diode is designed for high-speed switching and is AEC-Q101 qualified, ensuring its reliability in automotive and other demanding environments.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Reverse Voltage (VR) | - | - | - | 90 | V |
| Reverse Current (IR) | VR = 80 V | - | - | 0.5 | μA |
| Forward Voltage (VF) | IF = 1 mA | - | - | 715 | mV |
| Forward Voltage (VF) | IF = 10 mA | - | - | 855 | mV |
| Forward Current (IF) | Tamb ≤ 25 °C | - | - | 130 | mA |
| Reverse Recovery Time (trr) | - | - | - | 4 | ns |
| Diode Capacitance (Cd) | VR = 0 V; f = 1 MHz | - | - | 2 | pF |
| Junction Temperature (Tj) | - | - | - | 150 | °C |
| Ambient Temperature (Tamb) | - | -65 | - | 150 | °C |
Key Features
- High switching speed with a reverse recovery time (trr) of ≤ 4 ns.
- Low capacitance of ≤ 2 pF.
- Low leakage current.
- AEC-Q101 qualified for automotive applications.
- Small SOT323 (SC-70) SMD plastic package.
- High reverse voltage of up to 90 V.
Applications
The BAW56W/DG/B3115 is suitable for a variety of high-speed switching applications, including:
- Automotive systems due to its AEC-Q101 qualification.
- High-frequency circuits.
- Switching power supplies.
- Audio and video equipment.
- General-purpose high-speed switching.
Q & A
- What is the package type of the BAW56W/DG/B3115? The BAW56W/DG/B3115 is encapsulated in a SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package.
- What is the maximum reverse voltage of the BAW56W/DG/B3115? The maximum reverse voltage is 90 V.
- What is the reverse recovery time of the BAW56W/DG/B3115? The reverse recovery time is ≤ 4 ns.
- Is the BAW56W/DG/B3115 AEC-Q101 qualified? Yes, it is AEC-Q101 qualified for automotive applications.
- What is the maximum forward current of the BAW56W/DG/B3115 at 25 °C? The maximum forward current is 130 mA.
- What is the diode capacitance of the BAW56W/DG/B3115? The diode capacitance is ≤ 2 pF at VR = 0 V and f = 1 MHz.
- What are the operating temperature ranges for the BAW56W/DG/B3115? The ambient temperature range is -65 °C to 150 °C, and the junction temperature is up to 150 °C.
- What are some common applications of the BAW56W/DG/B3115? It is used in automotive systems, high-frequency circuits, switching power supplies, audio and video equipment, and general-purpose high-speed switching.
- Where can I find detailed specifications for the BAW56W/DG/B3115? Detailed specifications can be found in the datasheet available from the manufacturer's website or through authorized distributors.
- What is the thermal resistance from junction to solder point for the BAW56W/DG/B3115? The thermal resistance from junction to solder point is approximately 300 K/W.
