BUK9Y25-60E/GFX
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NXP USA Inc. BUK9Y25-60E/GFX

Manufacturer No:
BUK9Y25-60E/GFX
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH LFPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK9Y25-60E/GFX is a high-performance N-channel MOSFET produced by NXP USA Inc. This device is part of the BUK9 series and is designed for use in demanding automotive and industrial applications. It features a logic level gate and is packaged in the LFPAK56 (Power SO8) package, utilizing TrenchMOS technology. The MOSFET is AEC Q101 compliant, ensuring its suitability for high-reliability automotive systems.

Key Specifications

Parameter Conditions Min Max Unit
VDS (Drain-Source Voltage) Tj ≥ 25 °C; Tj ≤ 175 °C - - 60 V
ID (Drain Current) VGS = 5 V; Tmb = 25 °C - - 34 A
Ptot (Total Power Dissipation) Tmb = 25 °C - - 65 W
RDSon (Drain-Source On-State Resistance) VGS = 5 V; ID = 10 A; Tj = 25 °C - 20.8 25
Tstg (Storage Temperature) - -55 - 175 °C
Tj (Junction Temperature) - -55 - 175 °C
VGS(th) (Gate-Source Threshold Voltage) ID = 1 mA - - 0.5 V

Key Features

  • AEC Q101 compliant, suitable for high-performance automotive applications.
  • Logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C.
  • Repetitive avalanche rated, enhancing reliability in demanding environments.
  • Suitable for thermally demanding environments with a junction temperature rating of up to 175 °C.
  • Low on-state resistance (RDSon) of 25 mΩ, ensuring efficient power switching.
  • LFPAK56 (Power SO8) package, providing a compact and thermally efficient design.

Applications

  • 12 V Automotive systems.
  • Motors, lamps, and solenoid control.
  • Transmission control.
  • Ultra high performance power switching.

Q & A

  1. What is the BUK9Y25-60E/GFX?

    The BUK9Y25-60E/GFX is an N-channel MOSFET produced by NXP USA Inc., designed for high-performance automotive and industrial applications.

  2. What package type does the BUK9Y25-60E/GFX use?

    The BUK9Y25-60E/GFX is packaged in the LFPAK56 (Power SO8) package.

  3. What is the maximum drain-source voltage (VDS) of the BUK9Y25-60E/GFX?

    The maximum drain-source voltage (VDS) is 60 V.

  4. What is the maximum drain current (ID) of the BUK9Y25-60E/GFX?

    The maximum drain current (ID) is 34 A at VGS = 5 V and Tmb = 25 °C.

  5. Is the BUK9Y25-60E/GFX AEC Q101 compliant?

    Yes, the BUK9Y25-60E/GFX is AEC Q101 compliant, making it suitable for high-reliability automotive applications.

  6. What is the on-state resistance (RDSon) of the BUK9Y25-60E/GFX?

    The on-state resistance (RDSon) is 25 mΩ at VGS = 5 V and ID = 10 A.

  7. What are the typical applications of the BUK9Y25-60E/GFX?

    Typical applications include 12 V automotive systems, motors, lamps, and solenoid control, transmission control, and ultra high performance power switching.

  8. What is the junction temperature range of the BUK9Y25-60E/GFX?

    The junction temperature range is from -55 °C to 175 °C.

  9. Is the BUK9Y25-60E/GFX repetitive avalanche rated?

    Yes, the BUK9Y25-60E/GFX is repetitive avalanche rated, enhancing its reliability in demanding environments.

  10. What is the gate-source threshold voltage (VGS(th)) of the BUK9Y25-60E/GFX?

    The gate-source threshold voltage (VGS(th)) is greater than 0.5 V at 175 °C.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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