BUK9K89-100E115
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NXP USA Inc. BUK9K89-100E115

Manufacturer No:
BUK9K89-100E115
Manufacturer:
NXP USA Inc.
Package:
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Description:
NOW NEXPERIA BUK9K89-100E - POWE
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Product Introduction

Overview

The BUK9K89-100E,115 is a dual N-Channel MOSFET produced by NXP USA Inc., now part of Nexperia. This component is part of the TrenchMOS™ series and is certified to the AEC-Q101 standard, making it suitable for automotive and other high-reliability applications. The MOSFET features a logic level gate, which allows for easy control from microcontrollers and other logic-level devices.

Key Specifications

ParameterValue
Drain to Source Voltage (Vds)100 V
Continuous Drain Current (Id)12.5 A
Drain-Source Resistance (Rds On)75.8 mΩ @ 5V, 5A
Gate Threshold Voltage (Vgs)1.7 V @ 1 mA
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
PackageSOT1205

Key Features

  • Dual N-Channel configuration for increased functionality in a single package.
  • Logic level gate for easy control from microcontrollers and other logic-level devices.
  • High continuous drain current of 12.5 A, suitable for high-power applications.
  • Low drain-source resistance of 75.8 mΩ, reducing power losses.
  • AEC-Q101 qualified, ensuring reliability in automotive and other demanding environments.
  • TrenchMOS™ technology for improved performance and efficiency.

Applications

The BUK9K89-100E,115 is designed for use in various high-power and high-reliability applications, including:

  • Automotive systems: Such as power management, motor control, and battery management.
  • Industrial power systems: Including power supplies, motor drives, and power conversion systems.
  • Consumer electronics: High-power devices requiring efficient and reliable power management.
  • Renewable energy systems: Solar and wind power systems that require robust and efficient power handling.

Q & A

  1. What is the drain to source voltage rating of the BUK9K89-100E,115?
    The drain to source voltage rating is 100 V.
  2. What is the continuous drain current of this MOSFET?
    The continuous drain current is 12.5 A.
  3. What is the drain-source resistance of the BUK9K89-100E,115?
    The drain-source resistance is 75.8 mΩ @ 5V, 5A.
  4. Is the BUK9K89-100E,115 AEC-Q101 qualified?
    Yes, it is AEC-Q101 qualified.
  5. What type of gate does the BUK9K89-100E,115 have?
    The BUK9K89-100E,115 has a logic level gate.
  6. What is the package type of the BUK9K89-100E,115?
    The package type is SOT1205.
  7. What technology is used in the BUK9K89-100E,115?
    The BUK9K89-100E,115 uses TrenchMOS™ technology.
  8. What are some typical applications of the BUK9K89-100E,115?
    Typical applications include automotive systems, industrial power systems, consumer electronics, and renewable energy systems.
  9. Is the BUK9K89-100E,115 suitable for high-power applications?
    Yes, it is suitable for high-power applications due to its high continuous drain current and low drain-source resistance.
  10. Where can I find detailed specifications for the BUK9K89-100E,115?
    Detailed specifications can be found on official websites such as Nexperia, Digi-Key, Mouser Electronics, and in the component's datasheet.

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