Overview
The BLF888DS112 is a high-performance RF power transistor manufactured by NXP USA Inc. This device is part of NXP's extensive range of RF power discrete transistors, designed to meet the demanding requirements of various high-frequency applications. The BLF888DS112 is built using LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology, which offers high efficiency, reliability, and robust performance.
Key Specifications
| Parameter | Value | Units |
|---|---|---|
| Frequency Range | 0.47 to 0.86 GHz | GHz |
| Output Power | 600 W | W |
| Gain | 20 dB | dB |
| Typical Efficiency | 58% | % |
| Supply Voltage | 50 V | V |
| Id (Drain Current) | 1300 mA | mA |
| Package | SOT-539B | |
| Process | LDMOS |
Key Features
- High Output Power: The BLF888DS112 offers a high output power of 600 W, making it suitable for high-power RF applications.
- High Efficiency: With a typical efficiency of 58%, this transistor minimizes energy loss and maximizes performance.
- Wide Frequency Range: It operates within a frequency range of 0.47 to 0.86 GHz, making it versatile for various RF systems.
- LDMOS Technology: Built using LDMOS technology, it provides high reliability and robust performance.
- Compact Package: The SOT-539B package ensures a compact design, suitable for space-constrained applications.
Applications
The BLF888DS112 is designed for use in a variety of high-frequency applications, including:
- RF Amplifiers: Suitable for high-power RF amplifiers in broadcast, industrial, and medical equipment.
- Telecommunications: Used in base stations and other telecommunications infrastructure.
- Avionics and Radar Systems: Ideal for avionics and radar systems due to its high reliability and performance.
- Industrial Heating and Plasma Generation: Used in industrial heating and plasma generation systems.
Q & A
- What is the output power of the BLF888DS112?
The output power of the BLF888DS112 is 600 W. - What is the frequency range of the BLF888DS112?
The frequency range is from 0.47 to 0.86 GHz. - What is the typical efficiency of the BLF888DS112?
The typical efficiency is 58%. - What is the supply voltage for the BLF888DS112?
The supply voltage is 50 V. - What package type does the BLF888DS112 use?
The package type is SOT-539B. - What technology is used in the BLF888DS112?
The BLF888DS112 is built using LDMOS technology. - What are some common applications for the BLF888DS112?
Common applications include RF amplifiers, telecommunications, avionics, and industrial heating systems. - Is the BLF888DS112 suitable for high-power RF applications?
Yes, it is highly suitable due to its high output power and efficiency. - Where can I find more detailed specifications for the BLF888DS112?
You can find detailed specifications on the official NXP website or through authorized distributors like Digi-Key and RFMW. - Is the BLF888DS112 RoHS compliant?
Yes, the BLF888DS112 is RoHS compliant.
