Overview
The BGU8052X, also known as the BGTS1001M, is a low noise high linearity amplifier designed by NXP USA Inc. for wireless infrastructure applications. This amplifier is optimized to operate within the frequency range of 1.5 GHz to 2.5 GHz, making it suitable for various wireless communication standards such as GSM, LTE, W-CDMA, and CDMA. It is housed in a compact 8-terminal plastic thin small outline package (HWSON8) with dimensions of 2 mm x 2 mm x 0.75 mm. The device features fast shutdown capability, supporting Time Division Duplex (TDD) systems, and is ESD protected on all terminals.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Frequency Range | 1.5 | 2.5 | GHz | ||
| Supply Voltage (VCC) | 3.3 | 5 | 5.25 | V | |
| Supply Current (ICC) | On state | 36 | 48 | 60 | mA |
| Gain | On state | 17 | 18.5 | 20 | dB |
| Noise Figure (NF) | 0.50 | 0.70 | dB | ||
| Output Power at 1 dB Gain Compression (PL(1dB)) | 18 | dBm | |||
| Output Third-Order Intercept Point (IP3O) | 36 | dBm | |||
| Case Temperature (Tcase) | -40 | 85 | °C | ||
| Power Dissipation | Tcase ≤ 125 °C | 510 | mW | ||
| Moisture Sensitivity Level (MSL) | 1 | ||||
| Package | 8-WFDFN Exposed Pad |
Key Features
- Low Noise Performance: The BGU8052X offers a low noise figure of 0.50 dB, making it ideal for applications requiring high sensitivity and low noise levels.
- High Linearity Performance: With an output third-order intercept point (IP3O) of 36 dBm, this amplifier ensures minimal distortion and high linearity in signal amplification.
- High Input and Output Return Loss: The device features high input and output return loss, greater than 15 dB and 20 dB respectively, ensuring good impedance matching and minimal signal reflection.
- Fast Shutdown Capability: Supports Time Division Duplex (TDD) systems with fast shutdown to minimize power consumption during inactive periods.
- ESD Protection: All terminals are ESD protected, enhancing the device's reliability and durability.
- Programmable Bias Current: The bias current can be programmed via an external resistor, allowing for flexibility in different application scenarios.
- Compact Package: Housed in a small 8-terminal leadless package (HWSON8) with dimensions of 2 mm x 2 mm x 0.75 mm, making it suitable for space-constrained designs.
Applications
- Wireless Infrastructure: Ideal for base stations, small cells, and other wireless infrastructure applications requiring low noise and high linearity.
- LTE, W-CDMA, CDMA, GSM: Supports various wireless communication standards, making it versatile for different network technologies.
- General-Purpose Wireless Applications: Suitable for any application requiring low noise and high linearity in the frequency range of 1.5 GHz to 2.5 GHz.
- TDD or FDD Systems: Compatible with both Time Division Duplex and Frequency Division Duplex systems.
Q & A
- What is the frequency range of the BGU8052X amplifier?
The BGU8052X operates within the frequency range of 1.5 GHz to 2.5 GHz.
- What is the typical gain of the BGU8052X?
The typical gain of the BGU8052X is 18.5 dB.
- What is the noise figure of the BGU8052X?
The noise figure of the BGU8052X is typically 0.50 dB.
- What is the maximum supply voltage for the BGU8052X?
The maximum supply voltage for the BGU8052X is 5.25 V.
- What is the maximum power dissipation of the BGU8052X?
The maximum power dissipation of the BGU8052X is 510 mW.
- Does the BGU8052X have ESD protection?
Yes, the BGU8052X has ESD protection on all terminals.
- What is the package type of the BGU8052X?
The BGU8052X is housed in an 8-WFDFN Exposed Pad package.
- What are the typical applications of the BGU8052X?
The BGU8052X is typically used in wireless infrastructure, LTE, W-CDMA, CDMA, GSM, and general-purpose wireless applications.
- Does the BGU8052X support TDD systems?
Yes, the BGU8052X supports Time Division Duplex (TDD) systems with fast shutdown capability.
- How can the bias current of the BGU8052X be adjusted?
The bias current of the BGU8052X can be programmed via an external resistor.
