BC859BW115
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NXP USA Inc. BC859BW115

Manufacturer No:
BC859BW115
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
NOW NEXPERIA BC859BW SMALL SIGNA
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Product Introduction

Overview

The BC859BW115 is a general-purpose PNP bipolar transistor manufactured by Nexperia USA Inc., which was previously part of NXP USA Inc. This transistor is designed for a wide range of applications requiring low noise and high current gain. It is packaged in the compact SOT323 (SC-70) package, making it suitable for space-constrained designs.

Key Specifications

Parameter Value
Type Number BC859BW
Package SOT323 (SC-70)
Package Size (mm) 2 x 1.25 x 0.95
Channel Type PNP
Total Power Dissipation (Ptot) 200 mW
Collector Current (IC) -100 mA
DC Current Gain (hFE) 220 (min) @ 2mA, 5V
Junction Temperature (TJ) 150°C
Transition Frequency (fT) 100 MHz
VCE Saturation (Max) 650 mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 30 V

Key Features

  • Compact SOT323 (SC-70) package for space-saving designs.
  • High DC current gain (hFE) for reliable performance.
  • Low noise operation suitable for various applications.
  • High transition frequency (fT) of 100 MHz.
  • Automotive qualified for use in automotive applications.

Applications

  • General-purpose switching and amplification.
  • Automotive electronics, including sensors and control systems.
  • Consumer electronics, such as audio and video equipment.
  • Industrial control systems and automation.
  • Low-power and low-noise applications in IoT devices.

Q & A

  1. What is the package type of the BC859BW115 transistor?

    The BC859BW115 transistor is packaged in the SOT323 (SC-70) package.

  2. What is the maximum collector current of the BC859BW115 transistor?

    The maximum collector current (IC) is -100 mA.

  3. What is the transition frequency of the BC859BW115 transistor?

    The transition frequency (fT) is 100 MHz.

  4. Is the BC859BW115 transistor automotive qualified?

    Yes, the BC859BW115 transistor is automotive qualified.

  5. What is the maximum junction temperature of the BC859BW115 transistor?

    The maximum junction temperature (TJ) is 150°C.

  6. What is the typical DC current gain (hFE) of the BC859BW115 transistor?

    The typical DC current gain (hFE) is 220 @ 2mA, 5V.

  7. What is the VCE saturation voltage of the BC859BW115 transistor?

    The VCE saturation voltage is 650 mV @ 5mA, 100mA.

  8. What are the common applications of the BC859BW115 transistor?

    Common applications include general-purpose switching, automotive electronics, consumer electronics, industrial control systems, and low-power IoT devices.

  9. Is the BC859BW115 transistor RoHS compliant?

    Yes, the BC859BW115 transistor is RoHS compliant.

  10. Where can I find detailed datasheets and documentation for the BC859BW115 transistor?

    Detailed datasheets and documentation can be found on the Nexperia website or through authorized distributors like Digi-Key and Mouser.

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