Overview
The BAT54S/DG/B4215 is a Schottky barrier diode produced by NXP USA Inc., now part of Nexperia. This component is encapsulated in a small SOT23 (TO-236AB) surface-mounted device (SMD) plastic package. It is designed for high-speed switching applications and features a low forward voltage drop, making it suitable for various electronic designs. The BAT54S includes an integrated guard ring for stress protection, enhancing its reliability and performance in demanding environments.
Key Specifications
| Parameter | Conditions | Value | Unit |
|---|---|---|---|
| Continuous Reverse Voltage (VR) | - | 30 | V |
| Continuous Forward Current (IF) | - | 200 | mA |
| Repetitive Peak Forward Current (IFRM) | tp ≤ 1 s; δ ≤ 0.5 | 300 | mA |
| Non-Repetitive Peak Forward Current (IFSM) | tp < 10 ms | 600 | mA |
| Forward Voltage (VF) | IF = 0.1 mA | 240 | mV |
| Forward Voltage (VF) | IF = 1 mA | 320 | mV |
| Forward Voltage (VF) | IF = 10 mA | 400 | mV |
| Forward Voltage (VF) | IF = 30 mA | 500 | mV |
| Forward Voltage (VF) | IF = 100 mA | 800 | mV |
| Reverse Current (IR) | VR = 25 V | 2 | μA |
| Reverse Recovery Time (trr) | IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA | 5 | ns |
| Diode Capacitance (Cd) | f = 1 MHz; VR = 1 V | 10 | pF |
| Storage Temperature (Tstg) | - | -65 to 150 | °C |
| Junction Temperature (Tj) | - | -125 to 150 | °C |
Key Features
- Low Forward Voltage: The BAT54S has a low forward voltage drop, which is essential for efficient high-speed switching applications.
- Ultra High-Speed Switching: This diode is designed for ultra high-speed switching, making it suitable for applications requiring fast switching times.
- Integrated Guard Ring: The component includes an integrated guard ring for stress protection, enhancing its reliability and performance.
- Low Capacitance: The diode has low capacitance, which is beneficial for high-frequency applications.
- Small SOT23 Package: Encapsulated in a small SOT23 (TO-236AB) surface-mounted device (SMD) plastic package, making it ideal for space-constrained designs.
Applications
- Ultra High-Speed Switching: Suitable for applications requiring fast switching times, such as in high-speed digital circuits.
- Voltage Clamping: Used for voltage clamping to protect circuits from voltage spikes.
- Protection Circuits: Employed in protection circuits to safeguard against reverse polarity and overvoltage conditions.
- Blocking Diodes: Used as blocking diodes in various power supply and signal processing applications.
- Line Termination: Applied in line termination to match impedance and prevent signal reflections.
Q & A
- What is the maximum continuous reverse voltage of the BAT54S?
The maximum continuous reverse voltage (VR) of the BAT54S is 30 V.
- What is the maximum continuous forward current of the BAT54S?
The maximum continuous forward current (IF) of the BAT54S is 200 mA.
- What is the forward voltage drop of the BAT54S at 100 mA?
The forward voltage drop (VF) of the BAT54S at 100 mA is approximately 800 mV.
- What is the reverse recovery time of the BAT54S?
The reverse recovery time (trr) of the BAT54S is 5 ns when switched from IF = 10 mA to IR = 10 mA.
- What is the diode capacitance of the BAT54S?
The diode capacitance (Cd) of the BAT54S is 10 pF at f = 1 MHz and VR = 1 V.
- What is the storage temperature range of the BAT54S?
The storage temperature range (Tstg) of the BAT54S is -65 to 150 °C.
- What is the junction temperature range of the BAT54S?
The junction temperature range (Tj) of the BAT54S is -125 to 150 °C.
- What package type is the BAT54S available in?
The BAT54S is available in a small SOT23 (TO-236AB) surface-mounted device (SMD) plastic package.
- What are some common applications of the BAT54S?
The BAT54S is commonly used in ultra high-speed switching, voltage clamping, protection circuits, blocking diodes, and line termination.
- Does the BAT54S have any integrated protection features?
Yes, the BAT54S includes an integrated guard ring for stress protection.
