BAT54J
  • Share:

NXP USA Inc. BAT54J

Manufacturer No:
BAT54J
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
BAT54J - SCHOTTKY BARRIER SINGLE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAT54J is a Planar Schottky barrier single diode produced by Nexperia, a company that was previously part of NXP USA Inc. before becoming independent in 2017. This diode is encapsulated in a very small and flat lead SOD323F (SC-90) Surface-Mounted Device (SMD) plastic package. It features an integrated guard ring for stress protection, making it suitable for a variety of applications requiring low forward voltage and high efficiency.

Key Specifications

Type number Package Size (mm) VR [max] (V) IF [max] (mA) Cd [max] (pF) IR [max] (µA) @ VR (V) Automotive qualified
BAT54J SOD323F (SC-90) 1.7 x 1.25 x 0.7 30.0 200.0 10.0 2.0 @ 25.0 No

Key Features

  • Low forward voltage
  • Very small and flat lead SMD plastic package (SOD323F/SC-90)
  • Low capacitance
  • Flat leads: excellent coplanarity and improved thermal behavior
  • Integrated guard ring for stress protection

Applications

  • Voltage clamping
  • Line termination
  • Reverse polarity protection

Q & A

  1. What is the BAT54J diode?

    The BAT54J is a Planar Schottky barrier single diode encapsulated in a SOD323F (SC-90) package.

  2. What are the key features of the BAT54J diode?

    Key features include low forward voltage, a very small and flat lead SMD package, low capacitance, and an integrated guard ring for stress protection.

  3. What are the typical applications of the BAT54J diode?

    Typical applications include voltage clamping, line termination, and reverse polarity protection.

  4. What is the maximum forward current of the BAT54J diode?

    The maximum forward current is 200 mA.

  5. What is the maximum reverse voltage of the BAT54J diode?

    The maximum reverse voltage is 30 V.

  6. Is the BAT54J diode automotive qualified?

    No, the BAT54J diode is not automotive qualified.

  7. What is the package size of the BAT54J diode?

    The package size is 1.7 mm x 1.25 mm x 0.7 mm.

  8. What is the typical reverse leakage current of the BAT54J diode?

    The typical reverse leakage current is 2 µA at 25 V.

  9. What is the maximum junction temperature of the BAT54J diode?

    The maximum junction temperature is 150°C.

  10. Who is the manufacturer of the BAT54J diode?

    The manufacturer is Nexperia, which was previously part of NXP USA Inc.

Product Attributes

Diode Type:- 
Voltage - DC Reverse (Vr) (Max):- 
Current - Average Rectified (Io):- 
Voltage - Forward (Vf) (Max) @ If:- 
Speed:- 
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:- 
Capacitance @ Vr, F:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
Operating Temperature - Junction:- 
0 Remaining View Similar

In Stock

-
327

Please send RFQ , we will respond immediately.

Same Series
DD62M3200T0/AA
DD62M3200T0/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD15S20LV5S
DD15S20LV5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WES
DD15S20WES
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S10HE20/AA
DD26S10HE20/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S0TX/AA
DD26S2S0TX/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T0/AA
DD26S2S50T0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V5X/AA
DD26S2S0V5X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HE0/AA
DD26S10HE0/AA
CONN D-SUB HD RCPT 26POS CRIMP
RD50S100V50
RD50S100V50
CONN D-SUB RCPT 50POS CRIMP
DD44S32S60V3X
DD44S32S60V3X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20L0X
DD26S20L0X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60T0
DD44S32S60T0
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number BAT54J BAT54W BAT54T BAT54
Manufacturer NXP USA Inc. SMC Diode Solutions onsemi Diotec Semiconductor
Product Status Active Active Obsolete Active
Diode Type - Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) - 30 V 30 V 30 V
Current - Average Rectified (Io) - 200mA 200mA 200mA
Voltage - Forward (Vf) (Max) @ If - 1 V @ 100 mA 1 V @ 100 mA 1 V @ 100 mA
Speed - Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) - 5 ns 5 ns 5 ns
Current - Reverse Leakage @ Vr - 2 µA @ 25 V 2 µA @ 25 V 2 µA @ 25 V
Capacitance @ Vr, F - 10pF @ 1V, 1MHz 10pF @ 1V, 1MHz 10pF @ 0V, 1MHz
Mounting Type - Surface Mount Surface Mount Surface Mount
Package / Case - SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package - SOT-323 SOT-23-3 SOT-23-3 (TO-236)
Operating Temperature - Junction - 125°C (Max) 125°C (Max) -55°C ~ 150°C

Related Product By Categories

BAT54-TP
BAT54-TP
Micro Commercial Co
DIODE SCHOTTKY 30V 200MA SOT23
MUR860J
MUR860J
WeEn Semiconductors
ULTRAFAST POWER DIODE
PMEG3020EP,115
PMEG3020EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 2A CFP5
RB521S30T5G
RB521S30T5G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
STTH108A
STTH108A
STMicroelectronics
DIODE GEN PURP 800V 1A SMA
BAS16WS-G3-08
BAS16WS-G3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
STPSC10H065D
STPSC10H065D
STMicroelectronics
DIODE SCHOTTKY 650V 10A TO220AC
BAS21WQ-7-F
BAS21WQ-7-F
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOT323
1N5711UBD
1N5711UBD
Microchip Technology
SCHOTTKY BARRIER DIODE CERAMIC S
MUR120RL
MUR120RL
onsemi
DIODE GEN PURP 200V 1A AXIAL
1N4001GPHE3/54
1N4001GPHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
MUR160GP-AP
MUR160GP-AP
Micro Commercial Co
DIODE GPP SUPER FAST 1A DO-41

Related Product By Brand

SAF7755HV/N205K
SAF7755HV/N205K
NXP USA Inc.
DSP AUDIO MULTI-TUNER
MIMXRT1051CVJ5B
MIMXRT1051CVJ5B
NXP USA Inc.
I.MX RT1050 CROSSOVER PROCESSOR
LPC1315FBD48,551
LPC1315FBD48,551
NXP USA Inc.
IC MCU 32BIT 32KB FLASH 48LQFP
LPC55S28JBD64K
LPC55S28JBD64K
NXP USA Inc.
IC MCU 32BIT 512KB FLASH 64HTQFP
LPC1114FHN33/301:5
LPC1114FHN33/301:5
NXP USA Inc.
IC MCU 32BIT 32KB FLASH 32HVQFN
S9S12G48AMLF
S9S12G48AMLF
NXP USA Inc.
IC MCU 16BIT 48KB FLASH 48LQFP
MCF52110CAE66
MCF52110CAE66
NXP USA Inc.
IC MCU 32BIT 128KB FLASH 64LQFP
TJA1042T/3,118
TJA1042T/3,118
NXP USA Inc.
IC TRANSCEIVER HALF 1/1 8SO
HEF4093BT/C4118
HEF4093BT/C4118
NXP USA Inc.
NAND GATE
MPX53DP
MPX53DP
NXP USA Inc.
SENSOR DIFF PRESS 7.25PSI MAX
MPXV5100GC6U
MPXV5100GC6U
NXP USA Inc.
SENSOR GAUGE PRESS 14.5PSI MAX
LM75ADP/DG,118
LM75ADP/DG,118
NXP USA Inc.
SENSOR DIGITAL -55C-125C 8TSSOP