BAS16GW118
  • Share:

NXP USA Inc. BAS16GW118

Manufacturer No:
BAS16GW118
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
NEXPERIA, BAS16GW - HIGH-SPEED S
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS16GW118 is a diode component produced by NXP USA Inc. This device is part of the BAS16 series, which is known for its high-performance and reliability in various electronic applications. The BAS16GW118 is designed to handle specific voltage and current requirements, making it suitable for a range of uses in electronic circuits.

Key Specifications

Parameter Symbol Value Unit
Diode Reverse Voltage VR 80 V
Peak Reverse Voltage VRM 85 V
Forward Current IF 200 mA
Non-repetitive Peak Surge Forward Current IFSM 2.5 A (t = 1 µs)
Total Power Dissipation Ptot 250 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg -65 to 150 °C

Key Features

  • High Reverse Voltage: The BAS16GW118 can handle a reverse voltage of up to 80 V, making it suitable for applications requiring high voltage tolerance.
  • Low Forward Voltage Drop: The device has a low forward voltage drop, which minimizes power loss in the circuit.
  • High Surge Current Capability: It can withstand non-repetitive peak surge forward currents up to 2.5 A for 1 µs.
  • Compact Package: Available in a compact package, making it ideal for space-constrained designs.

Applications

  • General Purpose Rectification: Suitable for general-purpose rectification in power supplies, DC-DC converters, and other electronic circuits.
  • Overvoltage Protection: Can be used for overvoltage protection in various electronic devices.
  • Signal Processing: Used in signal processing and filtering applications due to its high accuracy and reliability.

Q & A

  1. What is the maximum reverse voltage of the BAS16GW118?

    The maximum reverse voltage of the BAS16GW118 is 80 V.

  2. What is the forward current rating of the BAS16GW118?

    The forward current rating of the BAS16GW118 is 200 mA.

  3. What is the non-repetitive peak surge forward current of the BAS16GW118?

    The non-repetitive peak surge forward current of the BAS16GW118 is 2.5 A for 1 µs.

  4. What is the junction temperature range of the BAS16GW118?

    The junction temperature range of the BAS16GW118 is up to 150 °C.

  5. What are the typical applications of the BAS16GW118?

    The BAS16GW118 is typically used in general-purpose rectification, overvoltage protection, and signal processing applications.

  6. What is the storage temperature range of the BAS16GW118?

    The storage temperature range of the BAS16GW118 is -65 to 150 °C.

  7. Is the BAS16GW118 suitable for high-power applications?

    No, the BAS16GW118 is not designed for high-power applications; it is more suited for low to medium power requirements.

  8. Can the BAS16GW118 be used in high-frequency applications?

    The BAS16GW118 is not specifically designed for high-frequency applications but can be used in various frequency ranges depending on the circuit design.

  9. What is the total power dissipation of the BAS16GW118?

    The total power dissipation of the BAS16GW118 is 250 mW.

  10. Is the BAS16GW118 available in different package types?

    Yes, the BAS16GW118 is available in various package types to suit different design requirements.

Product Attributes

Type:- 
Applications:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
0 Remaining View Similar

In Stock

-
597

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV5X/AA
DD15S2S5WV5X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S10LVLS/AA
DD15S10LVLS/AA
CONN D-SUB HD RCPT 15POS CRIMP
DD15S20Z00/AA
DD15S20Z00/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S32S60T20
DD44S32S60T20
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S10H00/AA
DD26S10H00/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S5000
DD26S2S5000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F000
DD26S2F000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HV50/AA
DD26S10HV50/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD44S3200T2X
DD44S3200T2X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S50V50
DD26S2S50V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20W0X
DD26S20W0X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S50T2X/AA
DD44S32S50T2X/AA
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

AM26LS32ACDBR
AM26LS32ACDBR
Texas Instruments
QUAD RECEIVER RS-422/RS-423 16-P
SN74ACT00NS
SN74ACT00NS
Texas Instruments
IC GATE NAND 4CH 2-INP 14-SO
BC846BW/DG/B4,115
BC846BW/DG/B4,115
Nexperia USA Inc.
BC846BW - TRANS NPN - DG/B4 DENO
PDZ12BGW,118
PDZ12BGW,118
Nexperia USA Inc.
SINGLE ZENER DIODE IN A SOD123 P
BCP56-10115
BCP56-10115
NXP USA Inc.
NOW NEXPERIA BCP56-10 - SMALL SI
74ALVC164245DGG,112
74ALVC164245DGG,112
Nexperia USA Inc.
BUS TRANSCEIVER, ALVC/VCX/A SERI
TDA19988BHN/C1518
TDA19988BHN/C1518
NXP USA Inc.
LOW POWER, 150 MHZ PIXEL RATE HD
PN5120A0HN1/C2
PN5120A0HN1/C2
NXP USA Inc.
IC TRANSMISSION MOD 32-HVQFN
MMPF0100NPANESR2528
MMPF0100NPANESR2528
NXP USA Inc.
POWER MANAGEMENT IC, I.MX6, NO-P
MMZ27333BT1147
MMZ27333BT1147
NXP USA Inc.
2 W HIGH GAIN POWER AMPLIFIER FO
S912ZVMC25F1MKK557
S912ZVMC25F1MKK557
NXP USA Inc.
MICROCONTROLLER, 16-BIT, HCS12 C
MRFE6VS25GNR1528
MRFE6VS25GNR1528
NXP USA Inc.
WIDEBAND RF POWER LDMOS TRANSIST

Related Product By Brand

BF909A,215
BF909A,215
NXP USA Inc.
MOSFET N-CH SOT-143B
A2T18H455W23NR6
A2T18H455W23NR6
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO
ADC1003S030TS/C1'1
ADC1003S030TS/C1'1
NXP USA Inc.
IC ADC 10BIT 28SSOP
SAA7706H/N210,518
SAA7706H/N210,518
NXP USA Inc.
IC CAR RADIO DSP 80-QFP
S9S12G128F0CLLR
S9S12G128F0CLLR
NXP USA Inc.
IC MCU 16BIT 128KB FLASH 100LQFP
MK20FN1M0VLQ12R
MK20FN1M0VLQ12R
NXP USA Inc.
IC MCU 32BIT 1MB FLASH 144LQFP
MCIMX535DVP1C2R2
MCIMX535DVP1C2R2
NXP USA Inc.
IC MPU 32BIT ARM 529PBGA
TJA1042TK/3/1,118
TJA1042TK/3/1,118
NXP USA Inc.
HIGH-SPEED CAN TRANSCEIVER WITH
74HC32PW/AUJ
74HC32PW/AUJ
NXP USA Inc.
IC GATE OR 4CH 2-INP 14TSSOP
BGU6005115
BGU6005115
NXP USA Inc.
LOW NOISE AMPLIFIER MMIC
SA630D/01,118
SA630D/01,118
NXP USA Inc.
IC RF SWITCH SPDT 1GHZ 8SO
MPX5010GP
MPX5010GP
NXP USA Inc.
SENSOR GAUGE PRESS 1.45 PSI MAX