BAS16GW118
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NXP USA Inc. BAS16GW118

Manufacturer No:
BAS16GW118
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
NEXPERIA, BAS16GW - HIGH-SPEED S
Delivery:
Payment:
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Product Introduction

Overview

The BAS16GW118 is a diode component produced by NXP USA Inc. This device is part of the BAS16 series, which is known for its high-performance and reliability in various electronic applications. The BAS16GW118 is designed to handle specific voltage and current requirements, making it suitable for a range of uses in electronic circuits.

Key Specifications

Parameter Symbol Value Unit
Diode Reverse Voltage VR 80 V
Peak Reverse Voltage VRM 85 V
Forward Current IF 200 mA
Non-repetitive Peak Surge Forward Current IFSM 2.5 A (t = 1 µs)
Total Power Dissipation Ptot 250 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg -65 to 150 °C

Key Features

  • High Reverse Voltage: The BAS16GW118 can handle a reverse voltage of up to 80 V, making it suitable for applications requiring high voltage tolerance.
  • Low Forward Voltage Drop: The device has a low forward voltage drop, which minimizes power loss in the circuit.
  • High Surge Current Capability: It can withstand non-repetitive peak surge forward currents up to 2.5 A for 1 µs.
  • Compact Package: Available in a compact package, making it ideal for space-constrained designs.

Applications

  • General Purpose Rectification: Suitable for general-purpose rectification in power supplies, DC-DC converters, and other electronic circuits.
  • Overvoltage Protection: Can be used for overvoltage protection in various electronic devices.
  • Signal Processing: Used in signal processing and filtering applications due to its high accuracy and reliability.

Q & A

  1. What is the maximum reverse voltage of the BAS16GW118?

    The maximum reverse voltage of the BAS16GW118 is 80 V.

  2. What is the forward current rating of the BAS16GW118?

    The forward current rating of the BAS16GW118 is 200 mA.

  3. What is the non-repetitive peak surge forward current of the BAS16GW118?

    The non-repetitive peak surge forward current of the BAS16GW118 is 2.5 A for 1 µs.

  4. What is the junction temperature range of the BAS16GW118?

    The junction temperature range of the BAS16GW118 is up to 150 °C.

  5. What are the typical applications of the BAS16GW118?

    The BAS16GW118 is typically used in general-purpose rectification, overvoltage protection, and signal processing applications.

  6. What is the storage temperature range of the BAS16GW118?

    The storage temperature range of the BAS16GW118 is -65 to 150 °C.

  7. Is the BAS16GW118 suitable for high-power applications?

    No, the BAS16GW118 is not designed for high-power applications; it is more suited for low to medium power requirements.

  8. Can the BAS16GW118 be used in high-frequency applications?

    The BAS16GW118 is not specifically designed for high-frequency applications but can be used in various frequency ranges depending on the circuit design.

  9. What is the total power dissipation of the BAS16GW118?

    The total power dissipation of the BAS16GW118 is 250 mW.

  10. Is the BAS16GW118 available in different package types?

    Yes, the BAS16GW118 is available in various package types to suit different design requirements.

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