Overview
The PBSS5540Z115 is a 40 V low VCEsat PNP transistor manufactured by Nexperia USA Inc. This transistor is designed to offer high performance and reliability in various electronic applications. It features a low collector-emitter saturation voltage, making it suitable for high-current switching and amplification tasks.
Key Specifications
Parameter | Conditions | Min | Max | Unit |
---|---|---|---|---|
Collector-Base Voltage (VCBO) | Open Emitter | - | 40 | V |
Collector-Emitter Voltage (VCEO) | Open Base | - | 40 | V |
Collector-Emitter Saturation Voltage (VCEsat) | IC = 500 mA, IB = 50 mA | - | 0.2 | V |
Continuous Collector Current (IC) | Tamb = 25°C | - | 8 | A |
Base-Emitter Saturation Voltage (VBEsat) | IC = 500 mA, IB = 50 mA | - | 1.2 | V |
Key Features
- Low collector-emitter saturation voltage (VCEsat) of 0.2 V at IC = 500 mA and IB = 50 mA, ensuring high efficiency in switching applications.
- High continuous collector current of up to 8 A, making it suitable for high-current applications.
- High collector-emitter voltage of 40 V, providing robust performance in various operating conditions.
- Compact package, facilitating ease of use in space-constrained designs.
Applications
The PBSS5540Z115 transistor is versatile and can be used in a variety of applications, including:
- High-current switching and amplification.
- Power management circuits.
- Automotive systems.
- Industrial control systems.
- Consumer electronics.
Q & A
- What is the maximum collector-emitter voltage of the PBSS5540Z115 transistor?
The maximum collector-emitter voltage (VCEO) is 40 V. - What is the typical collector-emitter saturation voltage of the PBSS5540Z115 transistor?
The typical collector-emitter saturation voltage (VCEsat) is 0.2 V at IC = 500 mA and IB = 50 mA. - What is the maximum continuous collector current of the PBSS5540Z115 transistor?
The maximum continuous collector current (IC) is 8 A at Tamb = 25°C. - In what types of applications is the PBSS5540Z115 transistor commonly used?
The PBSS5540Z115 transistor is commonly used in high-current switching and amplification, power management circuits, automotive systems, industrial control systems, and consumer electronics. - Who manufactures the PBSS5540Z115 transistor?
The PBSS5540Z115 transistor is manufactured by Nexperia USA Inc. - What is the base-emitter saturation voltage of the PBSS5540Z115 transistor?
The base-emitter saturation voltage (VBEsat) is typically 1.2 V at IC = 500 mA and IB = 50 mA. - Where can I purchase the PBSS5540Z115 transistor?
The PBSS5540Z115 transistor can be purchased from various distributors such as Mouser Electronics, Digi-Key, Arrow Electronics, and Avnet. - What are the benefits of the low VCEsat in the PBSS5540Z115 transistor?
The low VCEsat reduces power losses and increases efficiency in switching applications. - Is the PBSS5540Z115 transistor suitable for high-temperature environments?
While the transistor has robust specifications, it is important to refer to the datasheet for specific temperature ratings and ensure it meets the requirements of your application. - Can the PBSS5540Z115 transistor be used in automotive applications?
Yes, the PBSS5540Z115 transistor is suitable for automotive applications due to its high reliability and robust performance characteristics.