Overview
The BSH205G2 is a 20 V, P-channel Trench MOSFET produced by Nexperia USA Inc. This device is an automotive-qualified, enhancement mode Field-Effect Transistor (FET) packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. It is designed to offer low threshold voltage, low on-state resistance, and enhanced power dissipation capabilities, making it suitable for a variety of applications, including automotive and industrial sectors.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Type Number | BSH205G2 | - |
| Package | SOT23 (TO-236AB) | - |
| Channel Type | P-channel | - |
| VDS [max] | -20 | V |
| RDSon [max] @ VGS = 4.5 V; @25°C | 118 | mΩ |
| RDSon [max] @ VGS = 2.5 V | 152 | mΩ |
| Tj [max] | 175 | °C |
| ID [max] | -2.6 | A |
| QGD [typ] | 1.2 | nC |
| QG(tot) [typ] @ VGS = 4.5 V | 4.6 | nC |
| Ptot [max] | 0.48 | W |
| Qr [typ] | 1.3 | nC |
| VGSth [typ] | -0.65 | V |
| AEC-Q101 Qualified | Yes | - |
Key Features
- Low threshold voltage
- Low on-state resistance
- Trench MOSFET technology for enhanced power dissipation capability of up to 890 mW
- Very fast switching
- AEC-Q101 qualified for automotive applications
- Extended temperature range with Tj = 175 °C
Applications
- Relay driver
- High-speed line driver
- High-side load switch
- Switching circuits
- Automotive and industrial applications
- Power, computing, consumer, mobile, and wearable devices
Q & A
- What is the maximum drain-source voltage (VDS) of the BSH205G2? The maximum drain-source voltage (VDS) is -20 V.
- What is the package type of the BSH205G2? The BSH205G2 is packaged in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
- What is the maximum junction temperature (Tj) of the BSH205G2? The maximum junction temperature (Tj) is 175 °C.
- Is the BSH205G2 AEC-Q101 qualified? Yes, the BSH205G2 is AEC-Q101 qualified for automotive applications.
- What are some typical applications of the BSH205G2? Typical applications include relay drivers, high-speed line drivers, high-side load switches, and switching circuits.
- What is the maximum continuous drain current (ID) of the BSH205G2? The maximum continuous drain current (ID) is -2.6 A.
- What is the typical gate-source threshold voltage (VGSth) of the BSH205G2? The typical gate-source threshold voltage (VGSth) is -0.65 V.
- What technology is used in the BSH205G2? The BSH205G2 uses Trench MOSFET technology.
- What is the maximum power dissipation (Ptot) of the BSH205G2? The maximum power dissipation (Ptot) is 0.48 W.
- Is the BSH205G2 suitable for high-speed switching applications? Yes, the BSH205G2 is known for its very fast switching capabilities.
