BC850CW,135
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Nexperia USA Inc. BC850CW,135

Manufacturer No:
BC850CW,135
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.1A SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC850CW,135 is an NPN general-purpose bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. This transistor is designed for a wide range of applications, including automotive, industrial, and consumer electronics. It is packaged in a surface-mount SOT323 (SC-70) package, making it suitable for modern PCB designs that require compact and efficient components.

The BC850CW,135 is part of Nexperia's extensive portfolio of bipolar transistors, known for their reliability and performance. It is complemented by PNP transistors such as the BC859W and BC860W, allowing for versatile use in various circuit designs.

Key Specifications

Parameter Value Unit
Transistor Type NPN -
Package Type SOT323 (SC-70) -
Maximum Collector-Emitter Voltage (Vce) 45 V
Maximum Collector-Base Voltage (Vcb) 50 V
Maximum Emitter-Base Voltage (Veb) 5 V
Maximum Collector Current (Ic) 100 mA
Minimum DC Current Gain (hFE) 420 -
Maximum Power Dissipation (Ptot) 200 mW
Maximum Collector-Emitter Saturation Voltage (Vce(sat)) 0.6 V
Maximum Operating Frequency 100 MHz
Operating Temperature Range -65 to +150 °C
Dimensions 2 x 1.25 x 0.95 mm -

Key Features

  • Compact Package: The SOT323 (SC-70) package makes it ideal for space-constrained designs.
  • High Current Gain: With a minimum DC current gain (hFE) of 420, it ensures reliable amplification in various applications.
  • High Frequency Capability: It operates up to 100 MHz, making it suitable for high-frequency applications.
  • Low Saturation Voltage: The maximum collector-emitter saturation voltage (Vce(sat)) of 0.6 V minimizes power loss.
  • Automotive Qualified: It meets automotive standards, ensuring reliability in harsh environments.
  • Surface Mount Technology: Easy to integrate into modern PCB designs using surface mount technology.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its automotive qualification and robust performance.
  • Industrial Electronics: Used in industrial control systems, power supplies, and other industrial electronic devices.
  • Consumer Electronics: Found in consumer devices such as audio equipment, switching regulators, and general-purpose amplifiers.
  • Power and Computing: Used in power management circuits, computing devices, and other high-performance electronic systems.
  • Mobile and Wearables: Suitable for mobile devices and wearables due to its compact size and low power consumption.

Q & A

  1. What is the maximum collector-emitter voltage of the BC850CW,135 transistor?

    The maximum collector-emitter voltage (Vce) is 45 V.

  2. What is the package type of the BC850CW,135 transistor?

    The package type is SOT323 (SC-70).

  3. What is the minimum DC current gain (hFE) of the BC850CW,135 transistor?

    The minimum DC current gain (hFE) is 420.

  4. What is the maximum operating frequency of the BC850CW,135 transistor?

    The maximum operating frequency is 100 MHz.

  5. What is the maximum power dissipation of the BC850CW,135 transistor?

    The maximum power dissipation (Ptot) is 200 mW.

  6. What is the operating temperature range of the BC850CW,135 transistor?

    The operating temperature range is -65 to +150 °C.

  7. Is the BC850CW,135 transistor automotive qualified?

    Yes, the BC850CW,135 is automotive qualified.

  8. What are the dimensions of the BC850CW,135 transistor?

    The dimensions are 2 x 1.25 x 0.95 mm.

  9. What is the maximum collector current (Ic) of the BC850CW,135 transistor?

    The maximum collector current (Ic) is 100 mA.

  10. What is the maximum collector-emitter saturation voltage (Vce(sat)) of the BC850CW,135 transistor?

    The maximum collector-emitter saturation voltage (Vce(sat)) is 0.6 V.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:200 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SOT-323
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Similar Products

Part Number BC850CW,135 BC850BW,135 BC850CW,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Transistor Type NPN NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 200 @ 2mA, 5V 420 @ 2mA, 5V
Power - Max 200 mW 200 mW 200 mW
Frequency - Transition 100MHz 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package SOT-323 SOT-323 SOT-323

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