Overview
The BC847BPN-QF is a general-purpose NPN/PNP transistor pair manufactured by Nexperia USA Inc. This component is packaged in a small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package, making it ideal for space-constrained applications. The transistor pair is designed for general-purpose switching and amplification, offering a compact solution with closely matched current gain and low collector-emitter saturation voltage.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VCEO (Collector-Emitter Voltage) | Open base | - | - | 45 | V |
| VCBO (Collector-Base Voltage) | Open emitter | - | - | 50 | V |
| VEBO (Emitter-Base Voltage) | Open collector | - | - | 5 | V |
| IC (Collector Current) | - | - | - | 100 | mA |
| ICM (Peak Collector Current) | Single pulse; tp ≤ 1 ms | - | - | 200 | mA |
| IBM (Peak Base Current) | Single pulse; tp ≤ 1 ms | - | - | 200 | mA |
| Ptot (Total Power Dissipation) | Tamb ≤ 25 °C | - | - | 220/250 mW | mW |
| Tj (Junction Temperature) | - | - | - | 150 | °C |
| Tamb (Ambient Temperature) | - | -65 | - | 150 | °C |
| Tstg (Storage Temperature) | - | -65 | - | 150 | °C |
| hFE (DC Current Gain) | VCE = 5 V; IC = 2 mA | 200 | - | 450 | - |
| VCEsat (Collector-Emitter Saturation Voltage) | IC = 10 mA; IB = 0.5 mA | - | - | 100 mV | mV |
| VBEsat (Base-Emitter Saturation Voltage) | IC = 10 mA; IB = 0.5 mA | - | - | 755 mV | mV |
| fT (Transition Frequency) | IC = 10 mA; VCE = 5 V; f = 100 MHz | 100 | - | - | MHz |
Key Features
- Low collector capacitance and low collector-emitter saturation voltage, enhancing switching and amplification performance.
- Closely matched current gain (hFE) between the NPN and PNP transistors, reducing the number of components and board space.
- No mutual interference between the transistors, ensuring reliable operation in dual-transistor configurations.
- Automotive qualified (AEC-Q101), making it suitable for automotive applications.
- Compact SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package, ideal for space-constrained designs.
- Lead-free and halogen-free, complying with environmental regulations.
Applications
- General-purpose switching and amplification in various electronic circuits.
- Automotive electronics, such as in-car entertainment systems, sensors, and control units.
- Consumer electronics, including audio equipment, home appliances, and mobile devices.
- Industrial control systems and automation.
- Medical devices requiring reliable and compact transistor solutions.
Q & A
- What is the maximum collector-emitter voltage (VCEO) of the BC847BPN-QF?
The maximum collector-emitter voltage (VCEO) is 45 V.
- What is the maximum collector current (IC) of the BC847BPN-QF?
The maximum collector current (IC) is 100 mA.
- What is the package type of the BC847BPN-QF?
The BC847BPN-QF is packaged in a SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.
- What are the key features of the BC847BPN-QF?
The key features include low collector capacitance, low collector-emitter saturation voltage, closely matched current gain, and no mutual interference between the transistors.
- Is the BC847BPN-QF automotive qualified?
- What is the junction temperature range of the BC847BPN-QF?
The junction temperature range is from -65°C to 150°C.
- What is the transition frequency (fT) of the BC847BPN-QF?
The transition frequency (fT) is 100 MHz at IC = 10 mA and VCE = 5 V.
- Is the BC847BPN-QF lead-free and halogen-free?
- What are the typical applications of the BC847BPN-QF?
- What is the total power dissipation (Ptot) of the BC847BPN-QF?
