BC807K-25,215
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Nexperia USA Inc. BC807K-25,215

Manufacturer No:
BC807K-25,215
Manufacturer:
Nexperia USA Inc.
Package:
Bulk
Description:
BC807K-25R
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC807K-25,215 is a PNP general-purpose transistor manufactured by Nexperia USA Inc. This transistor is part of the BC807K series, which is AEC-Q101 qualified, making it suitable for automotive and other demanding applications. It is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, which is ideal for space-constrained designs. The BC807K-25 offers high current gain and high power dissipation capabilities, making it versatile for various electronic designs.

Key Specifications

Parameter Value Unit
Type Number BC807K-25 -
Package SOT23 (TO-236AB) -
Collector-Emitter Voltage (VCEO) -45 V
Collector Current (IC) -500 mA
Power Dissipation (Ptot) 350 mW
DC Current Gain (hFE) 100 - 400 -
Transition Frequency (fT) 80 MHz
Junction Temperature (TJ) 150 °C
VCE(sat) @ IB, IC 700 mV @ 50 mA, 500 mA -

Key Features

  • AEC-Q101 qualified for automotive applications.
  • PNP general-purpose transistor in SOT23 (TO-236AB) package.
  • High current gain with three current gain selections (100 to 400).
  • High power dissipation capability (350 mW).
  • Suitable for general-purpose switching and amplification.
  • Compact SMD package for space-efficient designs.

Applications

The BC807K-25,215 transistor is versatile and can be used in a wide range of applications, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is suitable for various automotive applications.
  • Industrial control systems: For general-purpose switching and amplification.
  • Consumer electronics: In devices requiring compact and efficient transistor solutions.
  • Power and computing systems: Where high current gain and power dissipation are necessary.

Q & A

  1. What is the maximum collector-emitter voltage (VCEO) of the BC807K-25 transistor?

    The maximum collector-emitter voltage (VCEO) is -45 V.

  2. What is the maximum collector current (IC) of the BC807K-25 transistor?

    The maximum collector current (IC) is -500 mA.

  3. What is the power dissipation (Ptot) of the BC807K-25 transistor?

    The power dissipation (Ptot) is 350 mW.

  4. What is the transition frequency (fT) of the BC807K-25 transistor?

    The transition frequency (fT) is 80 MHz.

  5. What is the junction temperature (TJ) of the BC807K-25 transistor?

    The junction temperature (TJ) is 150 °C.

  6. Is the BC807K-25 transistor AEC-Q101 qualified?
  7. What package type does the BC807K-25 transistor use?

    The BC807K-25 transistor is packaged in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

  8. What are the typical applications of the BC807K-25 transistor?

    The BC807K-25 transistor is used in automotive systems, industrial control systems, consumer electronics, and power and computing systems.

  9. What is the DC current gain (hFE) range of the BC807K-25 transistor?

    The DC current gain (hFE) range is from 100 to 400.

  10. How does the BC807K-25 transistor handle high power dissipation?

    The BC807K-25 transistor has a high power dissipation capability of 350 mW, making it suitable for applications requiring high power handling.

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