BAW56S/DG/B3X
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Nexperia USA Inc. BAW56S/DG/B3X

Manufacturer No:
BAW56S/DG/B3X
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
DIODE SWITCHING SOT363
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAW56S/DG/B3X is a high-speed switching diode produced by Nexperia USA Inc. This component is encapsulated in a small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package, making it ideal for compact and high-performance electronic designs. The diode is designed for high-speed switching applications, offering excellent performance characteristics such as low capacitance and high switching speed.

Key Specifications

Type number Package version Package name Size (mm) V R [max] (V) I FSM [max] (A) V F [max] (mV) I R [max] (nA) I FRM (mA) Configuration t rr [max] (ns) I F [max] (mA) C d [max] (pF)
BAW56S SOT363 TSSOP6 2.1 x 1.25 x 0.95 75 4 1000@IF=50mA 1000@VR=75V 450 quad series/c.a. 4 250 2

Key Features

  • High switching speed with a maximum reverse recovery time (trr) of 4 ns.
  • Low capacitance (Cd) of up to 2 pF.
  • Low leakage current.
  • Reverse voltage (VR) up to 75 V.
  • Small SMD plastic package (SOT363) for compact designs.
  • AEC-Q101 qualified, making it suitable for automotive applications.

Applications

The BAW56S/DG/B3X high-speed switching diode is versatile and can be used in various applications across different industries, including:

  • Automotive systems: For high-reliability and high-performance requirements.
  • Industrial electronics: In power supplies, motor control, and other high-speed switching circuits.
  • Consumer electronics: In devices requiring compact and efficient switching diodes.
  • Mobile and wearable devices: Where space and performance are critical.

Q & A

  1. What is the maximum reverse recovery time of the BAW56S/DG/B3X?

    The maximum reverse recovery time (trr) is 4 ns.

  2. What is the package type of the BAW56S/DG/B3X?

    The component is encapsulated in a SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.

  3. What is the maximum continuous reverse voltage of the BAW56S/DG/B3X?

    The maximum continuous reverse voltage (VR) is 75 V.

  4. Is the BAW56S/DG/B3X AEC-Q101 qualified?

    Yes, the BAW56S/DG/B3X is AEC-Q101 qualified, making it suitable for automotive applications.

  5. What is the maximum forward current of the BAW56S/DG/B3X?

    The maximum forward current (IF) is 250 mA.

  6. What is the typical forward voltage drop of the BAW56S/DG/B3X?

    The typical forward voltage drop (VF) is 1000 mV at IF = 50 mA.

  7. What is the leakage current of the BAW56S/DG/B3X?

    The leakage current (IR) is up to 1000 nA at VR = 75 V.

  8. What is the capacitance of the BAW56S/DG/B3X?

    The capacitance (Cd) is up to 2 pF.

  9. What are the dimensions of the SOT363 package?

    The dimensions of the SOT363 package are 2.1 x 1.25 x 0.95 mm.

  10. How can I order samples of the BAW56S/DG/B3X?

    Samples can be ordered via Nexperia's sales organization or through their network of global and regional distributors.

Product Attributes

Diode Configuration:- 
Diode Type:- 
Voltage - DC Reverse (Vr) (Max):- 
Current - Average Rectified (Io) (per Diode):- 
Voltage - Forward (Vf) (Max) @ If:- 
Speed:- 
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:- 
Operating Temperature - Junction:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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