BAS21GWJ
  • Share:

Nexperia USA Inc. BAS21GWJ

Manufacturer No:
BAS21GWJ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 225MA SOD123
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS21GWJ is a high-voltage switching diode produced by Nexperia USA Inc. This diode is encapsulated in a small Surface-Mounted Device (SMD) plastic package, specifically the SOD123 package. It is designed to handle high voltage and current requirements, making it suitable for a variety of applications across different industries.

Nexperia, known for its extensive portfolio of diodes, bipolar transistors, ESD protection devices, MOSFETs, GaN FETs, IGBTs, and analog & logic ICs, ensures that the BAS21GWJ meets high standards of efficiency and reliability.

Key Specifications

Type number Package version Package name Size (mm) V R [max] (V) I FSM [max] (A) V F [max] (mV) I R [max] (nA) I FRM (mA) Configuration t rr [max] (ns) I F [max] (mA) C d [max] (pF) Automotive qualified
BAS21GW SOD123 SOD123 2.675 x 1.6 x 1.15 200 9 1250 @ IF = 200 mA 100 @ VR = 200 V 625 Single 50 225 2 No

Key Features

  • High Voltage Capability: The BAS21GWJ can handle a maximum reverse voltage (V R) of 200 V, making it suitable for high-voltage applications.
  • Low Forward Voltage Drop: It has a maximum forward voltage drop (V F) of 1250 mV at an forward current (IF) of 200 mA, ensuring efficient operation.
  • Fast Switching Time: The diode features a maximum reverse recovery time (t rr) of 50 ns, which is beneficial for high-frequency switching applications.
  • Small SMD Package: Encapsulated in the SOD123 package, it is ideal for space-constrained designs.
  • Environmental Compliance: The component is compliant with EU RoHS, CN RoHS, and ELV directives, and is lead-free and halogen-free according to Nexperia's definitions.

Applications

The BAS21GWJ high-voltage switching diode is versatile and can be used in various applications across different industries, including:

  • Automotive Systems: For voltage regulation, protection circuits, and other high-voltage requirements.
  • Industrial Equipment: In power supplies, motor control circuits, and other industrial applications requiring high reliability.
  • Consumer Electronics: For power management and protection in consumer devices such as TVs, computers, and mobile devices.
  • Power Supplies: As a rectifier or voltage regulator in switch-mode power supplies.

Q & A

  1. What is the maximum reverse voltage (V R) of the BAS21GWJ?

    The maximum reverse voltage (V R) of the BAS21GWJ is 200 V.

  2. What is the maximum forward current (IF) of the BAS21GWJ?

    The maximum forward current (IF) of the BAS21GWJ is 225 mA.

  3. What is the package type of the BAS21GWJ?

    The BAS21GWJ is encapsulated in an SOD123 small Surface-Mounted Device (SMD) plastic package.

  4. Is the BAS21GWJ automotive qualified?

    No, the BAS21GWJ is not automotive qualified.

  5. What is the maximum forward voltage drop (V F) of the BAS21GWJ?

    The maximum forward voltage drop (V F) of the BAS21GWJ is 1250 mV at an IF of 200 mA.

  6. Is the BAS21GWJ compliant with RoHS and ELV directives?

    Yes, the BAS21GWJ is compliant with EU RoHS, CN RoHS, and ELV directives.

  7. What is the reverse recovery time (t rr) of the BAS21GWJ?

    The maximum reverse recovery time (t rr) of the BAS21GWJ is 50 ns.

  8. How is the BAS21GWJ packaged for distribution?

    The BAS21GWJ is available in reels with quantities of 3,000 or 10,000 pieces per reel.

  9. Is the BAS21GWJ lead-free and halogen-free?

    Yes, the BAS21GWJ is lead-free and halogen-free according to Nexperia's definitions.

  10. Where can I purchase the BAS21GWJ?

    The BAS21GWJ can be purchased from Nexperia's official distributors or directly through Nexperia's sales organization.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):225mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 200 V
Capacitance @ Vr, F:2pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-123
Supplier Device Package:SOD-123
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

$0.22
1,880

Please send RFQ , we will respond immediately.

Same Series
BAS21GWJ
BAS21GWJ
DIODE GEN PURP 200V 225MA SOD123

Similar Products

Part Number BAS21GWJ BAS21GWX
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V
Current - Average Rectified (Io) 225mA (DC) 225mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA 1.25 V @ 200 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 200 V 100 nA @ 200 V
Capacitance @ Vr, F 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case SOD-123 SOD-123
Supplier Device Package SOD-123 SOD-123
Operating Temperature - Junction 150°C (Max) 150°C (Max)

Related Product By Categories

PMEG1020EH,115
PMEG1020EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 10V 2A SOD123F
BAS20-E3-18
BAS20-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 200MA SOT23
STPS20SM100ST
STPS20SM100ST
STMicroelectronics
DIODE SCHOTTKY 100V 20A TO220AB
BAS321JX
BAS321JX
Nexperia USA Inc.
BAS321J/SOD323/SOD2
STTH1R06A
STTH1R06A
STMicroelectronics
DIODE GEN PURP 600V 1A SMA
NRVUS1MFA
NRVUS1MFA
onsemi
DIODE GEN PURP 1A1000V SOD123-2
BAT43W-HE3-18
BAT43W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
BAS40WQ-7-F
BAS40WQ-7-F
Diodes Incorporated
SCHOTTKY DIODE SOT323 T&R 3K
1N4004GP
1N4004GP
onsemi
DIODE GEN PURP 400V 1A DO41
BAS16_S00Z
BAS16_S00Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
MUR240
MUR240
onsemi
DIODE GEN PURP 400V 2A AXIAL
MURD330T4G
MURD330T4G
onsemi
DIODE GEN PURP 300V 3A DPAK

Related Product By Brand

BZT52H-B6V2,115
BZT52H-B6V2,115
Nexperia USA Inc.
DIODE ZENER 6.2V 375MW SOD123F
PDZ3.3B,115
PDZ3.3B,115
Nexperia USA Inc.
DIODE ZENER 3.3V 400MW SOD323
PBSS5350X,135
PBSS5350X,135
Nexperia USA Inc.
TRANS PNP 50V 3A SOT89
BC847CMB,315
BC847CMB,315
Nexperia USA Inc.
TRANS NPN 45V 0.1A DFN1006B-3
PMZ600UNEYL
PMZ600UNEYL
Nexperia USA Inc.
MOSFET N-CH 20V 600MA DFN1006-3
74HC1G66GW-Q100H
74HC1G66GW-Q100H
Nexperia USA Inc.
IC ANLG SWITCH SPST 5TSSOP
74LVC245AD,112
74LVC245AD,112
Nexperia USA Inc.
IC TXRX NON-INVERT 3.6V 20SO
74LVC3G04DP,125
74LVC3G04DP,125
Nexperia USA Inc.
IC INVERTER 3CH 3-INP 8TSSOP
74HCT04DB-Q100J
74HCT04DB-Q100J
Nexperia USA Inc.
IC INVERTER 6CH 1-INP 14SSOP
74HCT221D,112
74HCT221D,112
Nexperia USA Inc.
IC MULTIVIBRATOR 31NS 16SO
NXB0104GU12X
NXB0104GU12X
Nexperia USA Inc.
IC TXRX TRANSLATING XQFN12
BC807K-25,235
BC807K-25,235
Nexperia USA Inc.
BC807K-25 - 45 V, 500 MA PNP GEN