BAS21GWJ
  • Share:

Nexperia USA Inc. BAS21GWJ

Manufacturer No:
BAS21GWJ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 225MA SOD123
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS21GWJ is a high-voltage switching diode produced by Nexperia USA Inc. This diode is encapsulated in a small Surface-Mounted Device (SMD) plastic package, specifically the SOD123 package. It is designed to handle high voltage and current requirements, making it suitable for a variety of applications across different industries.

Nexperia, known for its extensive portfolio of diodes, bipolar transistors, ESD protection devices, MOSFETs, GaN FETs, IGBTs, and analog & logic ICs, ensures that the BAS21GWJ meets high standards of efficiency and reliability.

Key Specifications

Type number Package version Package name Size (mm) V R [max] (V) I FSM [max] (A) V F [max] (mV) I R [max] (nA) I FRM (mA) Configuration t rr [max] (ns) I F [max] (mA) C d [max] (pF) Automotive qualified
BAS21GW SOD123 SOD123 2.675 x 1.6 x 1.15 200 9 1250 @ IF = 200 mA 100 @ VR = 200 V 625 Single 50 225 2 No

Key Features

  • High Voltage Capability: The BAS21GWJ can handle a maximum reverse voltage (V R) of 200 V, making it suitable for high-voltage applications.
  • Low Forward Voltage Drop: It has a maximum forward voltage drop (V F) of 1250 mV at an forward current (IF) of 200 mA, ensuring efficient operation.
  • Fast Switching Time: The diode features a maximum reverse recovery time (t rr) of 50 ns, which is beneficial for high-frequency switching applications.
  • Small SMD Package: Encapsulated in the SOD123 package, it is ideal for space-constrained designs.
  • Environmental Compliance: The component is compliant with EU RoHS, CN RoHS, and ELV directives, and is lead-free and halogen-free according to Nexperia's definitions.

Applications

The BAS21GWJ high-voltage switching diode is versatile and can be used in various applications across different industries, including:

  • Automotive Systems: For voltage regulation, protection circuits, and other high-voltage requirements.
  • Industrial Equipment: In power supplies, motor control circuits, and other industrial applications requiring high reliability.
  • Consumer Electronics: For power management and protection in consumer devices such as TVs, computers, and mobile devices.
  • Power Supplies: As a rectifier or voltage regulator in switch-mode power supplies.

Q & A

  1. What is the maximum reverse voltage (V R) of the BAS21GWJ?

    The maximum reverse voltage (V R) of the BAS21GWJ is 200 V.

  2. What is the maximum forward current (IF) of the BAS21GWJ?

    The maximum forward current (IF) of the BAS21GWJ is 225 mA.

  3. What is the package type of the BAS21GWJ?

    The BAS21GWJ is encapsulated in an SOD123 small Surface-Mounted Device (SMD) plastic package.

  4. Is the BAS21GWJ automotive qualified?

    No, the BAS21GWJ is not automotive qualified.

  5. What is the maximum forward voltage drop (V F) of the BAS21GWJ?

    The maximum forward voltage drop (V F) of the BAS21GWJ is 1250 mV at an IF of 200 mA.

  6. Is the BAS21GWJ compliant with RoHS and ELV directives?

    Yes, the BAS21GWJ is compliant with EU RoHS, CN RoHS, and ELV directives.

  7. What is the reverse recovery time (t rr) of the BAS21GWJ?

    The maximum reverse recovery time (t rr) of the BAS21GWJ is 50 ns.

  8. How is the BAS21GWJ packaged for distribution?

    The BAS21GWJ is available in reels with quantities of 3,000 or 10,000 pieces per reel.

  9. Is the BAS21GWJ lead-free and halogen-free?

    Yes, the BAS21GWJ is lead-free and halogen-free according to Nexperia's definitions.

  10. Where can I purchase the BAS21GWJ?

    The BAS21GWJ can be purchased from Nexperia's official distributors or directly through Nexperia's sales organization.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):225mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 200 V
Capacitance @ Vr, F:2pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-123
Supplier Device Package:SOD-123
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

$0.22
1,880

Please send RFQ , we will respond immediately.

Same Series
BAS21GWX
BAS21GWX
DIODE GEN PURP 200V 225MA SOD123

Similar Products

Part Number BAS21GWJ BAS21GWX
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V
Current - Average Rectified (Io) 225mA (DC) 225mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA 1.25 V @ 200 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 200 V 100 nA @ 200 V
Capacitance @ Vr, F 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case SOD-123 SOD-123
Supplier Device Package SOD-123 SOD-123
Operating Temperature - Junction 150°C (Max) 150°C (Max)

Related Product By Categories

1N4148WS RRG
1N4148WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 75V 150MA SOD323F
STPS1150AY
STPS1150AY
STMicroelectronics
DIODE SCHOTTKY 150V 1A SMA
BAW56B5000
BAW56B5000
Infineon Technologies
HIGH SPEED SWITCHING DIODES
BAS40WS_R1_00001
BAS40WS_R1_00001
Panjit International Inc.
SOD-323, SKY
PMEG3015EH,115
PMEG3015EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 1.5A SOD123F
BAS16HT3G
BAS16HT3G
onsemi
DIODE GEN PURP 100V 200MA SOD323
PMEG2020EH,115
PMEG2020EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 2A SOD123F
BAS16WH6433XTMA1
BAS16WH6433XTMA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT323
BAV21W-7
BAV21W-7
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOD123
MRA4007T3
MRA4007T3
onsemi
DIODE GEN PURP 1KV 1A SMA
MUR120-E3/73
MUR120-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO204AC
1N5821 B0G
1N5821 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD

Related Product By Brand

PESD2CANFD24V-TR
PESD2CANFD24V-TR
Nexperia USA Inc.
TVS DIODE 24VWM 42VC TO236AB
PMEG4030ER/8X
PMEG4030ER/8X
Nexperia USA Inc.
DIODE SCHOTTKY 40V 3A SOD123W
PMEG2010BEA,115
PMEG2010BEA,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD323
BZX84-B22,215
BZX84-B22,215
Nexperia USA Inc.
DIODE ZENER 22V 250MW TO236AB
PEMH11,315
PEMH11,315
Nexperia USA Inc.
TRANS PREBIAS 2NPN 50V SOT666
BC807-40HZ
BC807-40HZ
Nexperia USA Inc.
BC807-40H/SOT23/TO-236AB
PBSS5540Z/ZLX
PBSS5540Z/ZLX
Nexperia USA Inc.
TRANS PNP 40V 5A SOT223
BUK7Y12-40EX
BUK7Y12-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 52A LFPAK56
74HC1G00GW-Q100H
74HC1G00GW-Q100H
Nexperia USA Inc.
IC GATE NAND 1CH 2-INP 5TSSOP
74LVC02APW-Q100J
74LVC02APW-Q100J
Nexperia USA Inc.
IC GATE NOR 4CH 2-INP 14TSSOP
74AHC573D,118
74AHC573D,118
Nexperia USA Inc.
IC OCTAL D TRANSP LATCH 20SOIC
BUK7Y2R5-40H,115
BUK7Y2R5-40H,115
Nexperia USA Inc.
POWER FIELD-EFFECT TRANSISTOR