MT53D512M32D2DS-053 WT:D
  • Share:

Micron Technology Inc. MT53D512M32D2DS-053 WT:D

Manufacturer No:
MT53D512M32D2DS-053 WT:D
Manufacturer:
Micron Technology Inc.
Package:
Tray
Description:
IC DRAM 16GBIT 1866MHZ 200WFBGA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MT53D512M32D2DS-053 WT:D, manufactured by Micron Technology Inc., is a high-density, low-power DDR4 SDRAM module designed for mobile and embedded applications. This memory chip offers a balance of high-speed operation and energy efficiency, making it suitable for a wide range of electronic devices. Introduced on October 31, 2017, this component is part of the LPDDR4 SDRAM family and is known for its compact form factor and wide temperature operating range.

Key Specifications

Specification Value
Memory Type DDR4 SDRAM
Capacity 16 Gb (512M x 32)
Data Rate Up to 3200 Mbps
Operating Voltage 1.2V
Operating Temperature Range -40°C to +95°C
Clock Frequency 1866 MHz
Package Type 200-pin WFBGA
RoHS Status Lead Free / RoHS Compliant

Key Features

  • High Density: Offers 16 Gb of storage capacity in a compact form factor.
  • Low Power Consumption: Operates at 1.2V, reducing energy usage in mobile and embedded devices.
  • High Data Rate: Supports data rates of up to 3200 Mbps for fast and responsive performance.
  • Wide Temperature Range: Suitable for operation in harsh environmental conditions.
  • On-Die Termination (ODT): Improves signal integrity and reduces system noise.

Applications

  • IoT Devices: Used to store sensor data, firmware, and configuration information.
  • Computers and Servers: Crucial components providing temporary storage for data and program code during active processing.
  • Automotive Electronics: Used for automotive applications to store firmware, manage engine control units (ECUs), store navigation data, and support various in-car entertainment systems.
  • Wearable Devices: Integrate into wearable devices such as smartwatches and fitness trackers to store user data, health indicators, and device settings.
  • Security Field: Used in security cameras, access control systems, and monitoring devices to store firmware, event logs, and captured video clips.

Q & A

  1. What is the main purpose of the MT53D512M32D2DS-053 WT:D?

    The MT53D512M32D2DS-053 WT:D is designed to provide high-density storage and high-speed data access while minimizing power consumption, making it suitable for mobile and embedded applications.

  2. What are the key specifications of the MT53D512M32D2DS-053 WT:D?

    The key specifications include a capacity of 16 Gb (512M x 32), a data rate of up to 3200 Mbps, an operating voltage of 1.2V, and an operating temperature range of -40°C to +95°C.

  3. What are the main features of the MT53D512M32D2DS-053 WT:D?

    The main features include high density, low power consumption, high data rate, wide temperature operating range, and on-die termination for improved signal integrity.

  4. In which applications is the MT53D512M32D2DS-053 WT:D commonly used?

    It is commonly used in IoT devices, computers and servers, automotive electronics, wearable devices, and security field applications.

  5. What is the package type of the MT53D512M32D2DS-053 WT:D?

    The package type is a 200-pin WFBGA (Wafer-Level Fine-Pitch Ball Grid Array).

  6. Is the MT53D512M32D2DS-053 WT:D RoHS compliant?

    Yes, the MT53D512M32D2DS-053 WT:D is Lead Free and RoHS compliant.

  7. What is the clock frequency of the MT53D512M32D2DS-053 WT:D?

    The clock frequency is 1866 MHz.

  8. Can the MT53D512M32D2DS-053 WT:D be used in place of other DDR4 SDRAM modules?

    While it can be used in similar applications, it is optimized for mobile and embedded systems with specific performance and energy efficiency requirements, so careful consideration is needed before substituting it with other modules.

  9. What are the advantages of using the MT53D512M32D2DS-053 WT:D?

    The advantages include high-density storage, low power consumption, high-speed data access, wide temperature operating range, and on-die termination for improved signal integrity.

  10. Are there any potential drawbacks to using the MT53D512M32D2DS-053 WT:D?

    Potential drawbacks include the need for careful PCB layout for optimal signal integrity and increased heat dissipation considerations due to its high density.

Product Attributes

Memory Type:Volatile
Memory Format:DRAM
Technology:SDRAM - Mobile LPDDR4
Memory Size:16Gb (512M x 32)
Memory Interface:- 
Clock Frequency:1.866 GHz
Write Cycle Time - Word, Page:- 
Access Time:- 
Voltage - Supply:1.1V
Operating Temperature:-30°C ~ 85°C (TC)
Mounting Type:Surface Mount
Package / Case:200-WFBGA
Supplier Device Package:200-WFBGA (10x14.5)
0 Remaining View Similar

In Stock

$25.12
16

Please send RFQ , we will respond immediately.

Same Series
DD62M3200V50/AA
DD62M3200V50/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD15S200V3S
DD15S200V3S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M2S5WV5X
DD26M2S5WV5X
CONN D-SUB HD PLUG 26P SLDR CUP
CBC9W4S10HTS/AA
CBC9W4S10HTS/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2S0TX
DD26S2S0TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20JVLS/AA
DD15S20JVLS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S0V3X/AA
DD26S2S0V3X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V5X
DD26S200V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HE0/AA
DD26S10HE0/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S20W00
DD26S20W00
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60T2X
DD44S32S60T2X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60T0
DD44S32S60T0
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

M95512-DRMN3TP/K
M95512-DRMN3TP/K
STMicroelectronics
IC EEPROM 512KBIT SPI 16MHZ 8SO
M95512-DFCS6TP/K
M95512-DFCS6TP/K
STMicroelectronics
IC EEPROM 512KBIT SPI 8WLCSP
M24C02-DRDW8TP/K
M24C02-DRDW8TP/K
STMicroelectronics
IC EEPROM 2KBIT I2C 1MHZ 8TSSOP
MB85RC16PNF-G-JNERE1
MB85RC16PNF-G-JNERE1
Kaga FEI America, Inc.
IC FRAM 16KBIT I2C 1MHZ 8SOP
AT24C02-10PI-1.8
AT24C02-10PI-1.8
Microchip Technology
IC EEPROM 2KBIT I2C 400KHZ 8DIP
M27C512-12B1
M27C512-12B1
STMicroelectronics
IC EPROM 512KBIT PARALLEL 28DIP
M27C512-70C6
M27C512-70C6
STMicroelectronics
IC EPROM 512KBIT PARALLEL 32PLCC
M93C46-WMN6T
M93C46-WMN6T
STMicroelectronics
IC EEPROM 1KBIT SPI 2MHZ 8SO
M29W128FL70ZA6E
M29W128FL70ZA6E
Micron Technology Inc.
IC FLASH 128MBIT PARALLEL 64TBGA
M29W400DB70N6E
M29W400DB70N6E
Micron Technology Inc.
IC FLASH 4MBIT PARALLEL 48TSOP
M29W160EB70N3F TR
M29W160EB70N3F TR
Micron Technology Inc.
IC FLASH 16MBIT PARALLEL 48TSOP
M29W128GL7AN6E
M29W128GL7AN6E
Micron Technology Inc.
IC FLASH 128MBIT PARALLEL 56TSOP

Related Product By Brand

MT25QU256ABA1EW9-0SIT TR
MT25QU256ABA1EW9-0SIT TR
Micron Technology Inc.
IC FLASH 256MBIT SPI 8WPDFN
MT25QU128ABA1EW7-0SIT
MT25QU128ABA1EW7-0SIT
Micron Technology Inc.
IC FLASH 128MBIT SPI 8WPDFN
MT41K256M16TW-107 AAT:P TR
MT41K256M16TW-107 AAT:P TR
Micron Technology Inc.
IC DRAM 4GBIT PARALLEL 96FBGA
M29W320DB70N6E
M29W320DB70N6E
Micron Technology Inc.
IC FLASH 32MBIT PARALLEL 48TSOP
M25P40-VMN6
M25P40-VMN6
Micron Technology Inc.
IC FLASH 4MBIT SPI 50MHZ 8SO
M29W160EB70ZA6E
M29W160EB70ZA6E
Micron Technology Inc.
IC FLASH 16MBIT PARALLEL 48TFBGA
M29W400DB55N6
M29W400DB55N6
Micron Technology Inc.
IC FLASH 4MBIT PARALLEL 48TSOP
M25P32-VMP6TG TR
M25P32-VMP6TG TR
Micron Technology Inc.
IC FLSH 32MBIT SPI 75MHZ 8VFQFPN
M29W160EB70N3E
M29W160EB70N3E
Micron Technology Inc.
IC FLASH 16MBIT PARALLEL 48TSOP
M25P80-VMC6TG TR
M25P80-VMC6TG TR
Micron Technology Inc.
IC FLASH 8MBIT SPI 75MHZ 8UFDFPN
M29W320DB70ZA3F TR
M29W320DB70ZA3F TR
Micron Technology Inc.
IC FLASH 32MBIT PARALLEL 63TFBGA
MT41K256M16HA-125 XIT:E TR
MT41K256M16HA-125 XIT:E TR
Micron Technology Inc.
IC DRAM 4GBIT PARALLEL 96FBGA