MT53D512M32D2DS-053 WT:D
  • Share:

Micron Technology Inc. MT53D512M32D2DS-053 WT:D

Manufacturer No:
MT53D512M32D2DS-053 WT:D
Manufacturer:
Micron Technology Inc.
Package:
Tray
Description:
IC DRAM 16GBIT 1866MHZ 200WFBGA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MT53D512M32D2DS-053 WT:D, manufactured by Micron Technology Inc., is a high-density, low-power DDR4 SDRAM module designed for mobile and embedded applications. This memory chip offers a balance of high-speed operation and energy efficiency, making it suitable for a wide range of electronic devices. Introduced on October 31, 2017, this component is part of the LPDDR4 SDRAM family and is known for its compact form factor and wide temperature operating range.

Key Specifications

Specification Value
Memory Type DDR4 SDRAM
Capacity 16 Gb (512M x 32)
Data Rate Up to 3200 Mbps
Operating Voltage 1.2V
Operating Temperature Range -40°C to +95°C
Clock Frequency 1866 MHz
Package Type 200-pin WFBGA
RoHS Status Lead Free / RoHS Compliant

Key Features

  • High Density: Offers 16 Gb of storage capacity in a compact form factor.
  • Low Power Consumption: Operates at 1.2V, reducing energy usage in mobile and embedded devices.
  • High Data Rate: Supports data rates of up to 3200 Mbps for fast and responsive performance.
  • Wide Temperature Range: Suitable for operation in harsh environmental conditions.
  • On-Die Termination (ODT): Improves signal integrity and reduces system noise.

Applications

  • IoT Devices: Used to store sensor data, firmware, and configuration information.
  • Computers and Servers: Crucial components providing temporary storage for data and program code during active processing.
  • Automotive Electronics: Used for automotive applications to store firmware, manage engine control units (ECUs), store navigation data, and support various in-car entertainment systems.
  • Wearable Devices: Integrate into wearable devices such as smartwatches and fitness trackers to store user data, health indicators, and device settings.
  • Security Field: Used in security cameras, access control systems, and monitoring devices to store firmware, event logs, and captured video clips.

Q & A

  1. What is the main purpose of the MT53D512M32D2DS-053 WT:D?

    The MT53D512M32D2DS-053 WT:D is designed to provide high-density storage and high-speed data access while minimizing power consumption, making it suitable for mobile and embedded applications.

  2. What are the key specifications of the MT53D512M32D2DS-053 WT:D?

    The key specifications include a capacity of 16 Gb (512M x 32), a data rate of up to 3200 Mbps, an operating voltage of 1.2V, and an operating temperature range of -40°C to +95°C.

  3. What are the main features of the MT53D512M32D2DS-053 WT:D?

    The main features include high density, low power consumption, high data rate, wide temperature operating range, and on-die termination for improved signal integrity.

  4. In which applications is the MT53D512M32D2DS-053 WT:D commonly used?

    It is commonly used in IoT devices, computers and servers, automotive electronics, wearable devices, and security field applications.

  5. What is the package type of the MT53D512M32D2DS-053 WT:D?

    The package type is a 200-pin WFBGA (Wafer-Level Fine-Pitch Ball Grid Array).

  6. Is the MT53D512M32D2DS-053 WT:D RoHS compliant?

    Yes, the MT53D512M32D2DS-053 WT:D is Lead Free and RoHS compliant.

  7. What is the clock frequency of the MT53D512M32D2DS-053 WT:D?

    The clock frequency is 1866 MHz.

  8. Can the MT53D512M32D2DS-053 WT:D be used in place of other DDR4 SDRAM modules?

    While it can be used in similar applications, it is optimized for mobile and embedded systems with specific performance and energy efficiency requirements, so careful consideration is needed before substituting it with other modules.

  9. What are the advantages of using the MT53D512M32D2DS-053 WT:D?

    The advantages include high-density storage, low power consumption, high-speed data access, wide temperature operating range, and on-die termination for improved signal integrity.

  10. Are there any potential drawbacks to using the MT53D512M32D2DS-053 WT:D?

    Potential drawbacks include the need for careful PCB layout for optimal signal integrity and increased heat dissipation considerations due to its high density.

Product Attributes

Memory Type:Volatile
Memory Format:DRAM
Technology:SDRAM - Mobile LPDDR4
Memory Size:16Gb (512M x 32)
Memory Interface:- 
Clock Frequency:1.866 GHz
Write Cycle Time - Word, Page:- 
Access Time:- 
Voltage - Supply:1.1V
Operating Temperature:-30°C ~ 85°C (TC)
Mounting Type:Surface Mount
Package / Case:200-WFBGA
Supplier Device Package:200-WFBGA (10x14.5)
0 Remaining View Similar

In Stock

$25.12
16

Please send RFQ , we will respond immediately.

Same Series
DD62M3200V50/AA
DD62M3200V50/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD15S20Z0X
DD15S20Z0X
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S20000
DD26S20000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0TX
DD26S2S0TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0T2X
DD26S2S0T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F00X/AA
DD26S2F00X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32000X/AA
DD44S32000X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S200E0/AA
DD26S200E0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10HV3S/AA
CBC13W3S10HV3S/AA
CONN D-SUB RCPT 13POS CRIMP
DD44S3200T2X
DD44S3200T2X
CONN D-SUB HD RCPT 44P VERT SLDR
RD50S1S50V50
RD50S1S50V50
CONN D-SUB RCPT 50POS CRIMP
DD26S20WE2X/AA
DD26S20WE2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

CAT24C04YI-GT3
CAT24C04YI-GT3
onsemi
IC EEPROM 4KBIT I2C 8TSSOP
W25Q32JVSSIQ TR
W25Q32JVSSIQ TR
Winbond Electronics
IC FLASH 32MBIT SPI/QUAD 8SOIC
W971GG6NB-25 TR
W971GG6NB-25 TR
Winbond Electronics
IC DRAM 1GBIT PARALLEL 84WBGA
CAT25020YI-GT3
CAT25020YI-GT3
onsemi
IC EEPROM 2KBIT SPI 20MHZ 8TSSOP
M48Z35Y-70MH1F
M48Z35Y-70MH1F
STMicroelectronics
IC NVSRAM 256KBIT PARALLEL 28SOH
M95020-WMN6P
M95020-WMN6P
STMicroelectronics
IC EEPROM 2KBIT SPI 20MHZ 8SO
AT24C02BN-SP25-B
AT24C02BN-SP25-B
Atmel
IC EEPROM 2KBIT I2C 1MHZ
MB85RC16PNF-G-JNERE1
MB85RC16PNF-G-JNERE1
Kaga FEI America, Inc.
IC FRAM 16KBIT I2C 1MHZ 8SOP
M25P32-VME6G
M25P32-VME6G
Micron Technology Inc.
IC FLASH 32MBIT SPI 75MHZ 8VDFPN
M27C1001-45XC1
M27C1001-45XC1
STMicroelectronics
IC EPROM 1MBIT PARALLEL 32PLCC
M25P40-VMN6TPBA TR
M25P40-VMN6TPBA TR
Micron Technology Inc.
IC FLASH 4MBIT SPI 75MHZ 8SO
M28W160FSB70ZA6E
M28W160FSB70ZA6E
Micron Technology Inc.
IC FLASH 16MBIT PARALLEL 64TBGA

Related Product By Brand

MTFC32GAPALBH-IT
MTFC32GAPALBH-IT
Micron Technology Inc.
IC FLASH 256GBIT MMC 153TFBGA
MT48LC16M16A2P-6A IT:G TR
MT48LC16M16A2P-6A IT:G TR
Micron Technology Inc.
IC DRAM 256MBIT PAR 54TSOP II
MT41K128M16JT-125 XIT:K TR
MT41K128M16JT-125 XIT:K TR
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 96FBGA
MT40A512M16LY-062E AUT:E TR
MT40A512M16LY-062E AUT:E TR
Micron Technology Inc.
IC DRAM 8GBIT PARALLEL 96FBGA
MT25QL512ABB8ESF-0SIT
MT25QL512ABB8ESF-0SIT
Micron Technology Inc.
IC FLASH 512MBIT SPI 133MHZ 16SO
M29W400BB90N6
M29W400BB90N6
Micron Technology Inc.
IC FLASH 4MBIT PARALLEL 48TSOP
M29W640GB70NA6E
M29W640GB70NA6E
Micron Technology Inc.
IC FLASH 64MBIT PARALLEL 48TSOP
M25P16-VMC6TG TR
M25P16-VMC6TG TR
Micron Technology Inc.
IC FLSH 16MBIT SPI 75MHZ 8UFDFPN
MT47H64M16NF-25E IT:M
MT47H64M16NF-25E IT:M
Micron Technology Inc.
IC DRAM 1GBIT PARALLEL 84FBGA
M25P32-VMW3GB
M25P32-VMW3GB
Micron Technology Inc.
IC FLASH 32MBIT SPI 75MHZ 8SO
MT28EW01GABA1HJS-0SIT
MT28EW01GABA1HJS-0SIT
Micron Technology Inc.
IC FLASH 1GBIT PARALLEL 56TSOP
MT40A512M16LY-062E AT:E
MT40A512M16LY-062E AT:E
Micron Technology Inc.
IC FLASH 8GBIT 1.6GHZ 96FBGA