MT40A512M16LY-062E:E TR
  • Share:

Micron Technology Inc. MT40A512M16LY-062E:E TR

Manufacturer No:
MT40A512M16LY-062E:E TR
Manufacturer:
Micron Technology Inc.
Package:
Tape & Reel (TR)
Description:
IC DRAM 8GBIT PARALLEL 96FBGA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MT40A512M16LY-062E:E TR is a high-performance DDR4 SDRAM module manufactured by Micron Technology Inc. This integrated circuit is designed to meet the demanding requirements of various applications, including consumer, enterprise, and networking systems. With its advanced 40nm technology node and robust feature set, it offers enhanced data accuracy, reliability, and performance.

Key Specifications

Specification Value
DRAM Type DDR4 SDRAM
DRAM Density 8 Gbit (512M x 16)
Clock Frequency 1.6 GHz
Memory Configuration 512M x 16
Supply Voltage Nominal 1.2V ±60mV
Access Time 625 ps
Package Type 96-Pin FBGA (Fine-Pitch Ball Grid Array)
Operating Temperature Range -40°C to 125°C
Refresh Time 64ms at -40°C to 85°C, 32ms at 85°C to 95°C, 16ms at 95°C to 105°C, 8ms at 105°C to 125°C
Internal Banks 16 internal banks (x8): 4 groups of 4 banks each; 8 internal banks (x16): 2 groups of 4 banks each
Prefetch Architecture 8n-bit prefetch architecture
RoHS Compliance Yes

Key Features

  • Advanced Error Correction: Features on-die error correction code (ECC) for improved data accuracy.
  • High-Speed Operation: Operates up to 2666 Mbps, with a clock frequency of 1.6 GHz.
  • Low Power Consumption: Includes low-power auto self refresh (LPASR) and temperature-controlled refresh (TCR) for maximum power saving.
  • Robust Reliability: Supports data bus inversion (DBI), command/address (CA) parity, and databus write cyclic redundancy check (CRC).
  • Flexible Configuration: Programmable data strobe preambles, data strobe preamble training, and multipurpose register read and write capability.
  • Thermal Management: Equipped with Micron's thermal- and stress-management technology to extend device endurance.
  • JEDEC Compliance: Compliant with JEDEC JESD-79-4 standards.

Applications

The MT40A512M16LY-062E:E TR is designed for use in a variety of applications, including:

  • Consumer Electronics: Suitable for high-performance consumer devices such as smartphones, tablets, and laptops.
  • Enterprise Systems: Ideal for server and data center applications requiring high reliability and performance.
  • Networking Equipment: Used in network routers, switches, and other networking devices that demand high-speed data transfer.

Q & A

  1. What is the DRAM type of the MT40A512M16LY-062E:E TR?

    The DRAM type is DDR4 SDRAM.

  2. What is the memory configuration of this module?

    The memory configuration is 512M x 16.

  3. What is the clock frequency of the MT40A512M16LY-062E:E TR?

    The clock frequency is 1.6 GHz.

  4. What is the operating temperature range of this module?

    The operating temperature range is -40°C to 125°C.

  5. Does the MT40A512M16LY-062E:E TR support ECC?

    Yes, it supports on-die error correction code (ECC) for improved data accuracy.

  6. What is the package type of the MT40A512M16LY-062E:E TR?

    The package type is 96-Pin FBGA (Fine-Pitch Ball Grid Array).

  7. Is the MT40A512M16LY-062E:E TR RoHS compliant?

    Yes, it is RoHS compliant.

  8. What are some of the key features for power management in the MT40A512M16LY-062E:E TR?

    It includes low-power auto self refresh (LPASR) and temperature-controlled refresh (TCR) for maximum power saving.

  9. What are the typical applications for the MT40A512M16LY-062E:E TR?

    It is used in consumer electronics, enterprise systems, and networking equipment.

  10. Does the MT40A512M16LY-062E:E TR support data bus inversion and parity checks?

    Yes, it supports data bus inversion (DBI) and command/address (CA) parity.

Product Attributes

Memory Type:Volatile
Memory Format:DRAM
Technology:SDRAM - DDR4
Memory Size:8Gb (512M x 16)
Memory Interface:Parallel
Clock Frequency:1.6 GHz
Write Cycle Time - Word, Page:- 
Access Time:- 
Voltage - Supply:1.14V ~ 1.26V
Operating Temperature:0°C ~ 95°C (TC)
Mounting Type:Surface Mount
Package / Case:96-TFBGA
Supplier Device Package:96-FBGA (7.5x13.5)
0 Remaining View Similar

In Stock

$9.30
84

Please send RFQ , we will respond immediately.

Same Series
MT40A2G4WE-083E:B TR
MT40A2G4WE-083E:B TR
IC DRAM 8GBIT PARALLEL 78FBGA
MT40A512M16LY-062E IT:E
MT40A512M16LY-062E IT:E
IC DRAM 8GBIT PARALLEL 96FBGA
MT40A512M16LY-075:E TR
MT40A512M16LY-075:E TR
IC DRAM 8GBIT PARALLEL 96FBGA
MT40A2G4SA-075:E
MT40A2G4SA-075:E
IC DRAM 8GBIT PARALLEL 78FBGA
MT40A2G4SA-062E:E TR
MT40A2G4SA-062E:E TR
IC DRAM 8GBIT PARALLEL 78FBGA
MT40A2G4PM-083E:A
MT40A2G4PM-083E:A
IC DRAM 8GBIT PARALLEL 78FBGA
MT40A1G8WE-075E AIT:B TR
MT40A1G8WE-075E AIT:B TR
IC DRAM 8GBIT PARALLEL 78FBGA
MT40A1G8WE-083E AUT:B TR
MT40A1G8WE-083E AUT:B TR
IC DRAM 8GBIT PARALLEL 78FBGA
MT40A1G8WE-075E:B TR
MT40A1G8WE-075E:B TR
IC DRAM 8GBIT PARALLEL 78FBGA
MT40A2G4WE-075E:B TR
MT40A2G4WE-075E:B TR
IC DRAM 8GBIT PARALLEL 78FBGA
MT40A512M16HA-083E IT:A
MT40A512M16HA-083E IT:A
IC DRAM 8GBIT PARALLEL 96FBGA
MT40A512M16JY-075E AIT:B
MT40A512M16JY-075E AIT:B
IC DRAM 8GBIT PARALLEL 96FBGA

Related Product By Categories

W25X20CLSNIG
W25X20CLSNIG
Winbond Electronics
IC FLASH 2MBIT SPI 104MHZ 8SOIC
IS62C256AL-45ULI
IS62C256AL-45ULI
ISSI, Integrated Silicon Solution Inc
IC SRAM 256KBIT PARALLEL 28SOP
AT25512N-SH-T
AT25512N-SH-T
Microchip Technology
IC EEPROM 512KBIT SPI 8SOIC
SST26VF064BT-104I/SM
SST26VF064BT-104I/SM
Microchip Technology
IC FLASH 64MBIT SPI/QUAD 8SOIJ
MT25QL01GBBB8ESF-0SIT TR
MT25QL01GBBB8ESF-0SIT TR
Micron Technology Inc.
IC FLASH 1GBIT SPI 133MHZ 16SO
MB85RC16PNF-G-JNERE1
MB85RC16PNF-G-JNERE1
Kaga FEI America, Inc.
IC FRAM 16KBIT I2C 1MHZ 8SOP
MT41K128M16JT-125:K
MT41K128M16JT-125:K
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 96FBGA
M27C512-70C6
M27C512-70C6
STMicroelectronics
IC EPROM 512KBIT PARALLEL 32PLCC
M25P10-AVMN6P
M25P10-AVMN6P
Micron Technology Inc.
IC FLASH 1MBIT SPI 50MHZ 8SO
M29W640GL70NB6F TR
M29W640GL70NB6F TR
Micron Technology Inc.
IC FLASH 64MBIT PARALLEL 56TSOP
MT47H64M16NF-25E:M
MT47H64M16NF-25E:M
Micron Technology Inc.
IC DRAM 1GBIT PARALLEL 84FBGA
MT41K256M16HA-125 XIT:E TR
MT41K256M16HA-125 XIT:E TR
Micron Technology Inc.
IC DRAM 4GBIT PARALLEL 96FBGA

Related Product By Brand

MT25QU128ABA1EW7-0SIT
MT25QU128ABA1EW7-0SIT
Micron Technology Inc.
IC FLASH 128MBIT SPI 8WPDFN
MT25QL512ABB8ESF-0SIT
MT25QL512ABB8ESF-0SIT
Micron Technology Inc.
IC FLASH 512MBIT SPI 133MHZ 16SO
M29F400BB70N6T TR
M29F400BB70N6T TR
Micron Technology Inc.
IC FLASH 4MBIT PARALLEL 48TSOP
NAND256W3A2BZA6E
NAND256W3A2BZA6E
Micron Technology Inc.
IC FLSH 256MBIT PARALLEL 55VFBGA
M25P40-VMP6TG TR
M25P40-VMP6TG TR
Micron Technology Inc.
IC FLASH 4MBIT SPI 50MHZ 8VDFPN
M25P10-AVMN6TP TR
M25P10-AVMN6TP TR
Micron Technology Inc.
IC FLASH 1MBIT SPI 50MHZ 8SO
M25P40-VMW6TGB TR
M25P40-VMW6TGB TR
Micron Technology Inc.
IC FLASH 4MBIT SPI 75MHZ 8SO
MT41K128M16JT-125 M AIT:K
MT41K128M16JT-125 M AIT:K
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 96FBGA
M25P32-VMW3TGB TR
M25P32-VMW3TGB TR
Micron Technology Inc.
IC FLASH 32MBIT SPI 75MHZ 8SO
M29W320DB7AN6F TR
M29W320DB7AN6F TR
Micron Technology Inc.
IC FLASH 32MBIT PARALLEL 48TSOP
M25P32-VMW6GBA
M25P32-VMW6GBA
Micron Technology Inc.
IC FLASH 32MBIT SPI 75MHZ 8SO
MTFC16GAPALBH-IT TR
MTFC16GAPALBH-IT TR
Micron Technology Inc.
IC FLASH 128GBIT MMC 153TFBGA