MT40A512M16LY-062E:E TR
  • Share:

Micron Technology Inc. MT40A512M16LY-062E:E TR

Manufacturer No:
MT40A512M16LY-062E:E TR
Manufacturer:
Micron Technology Inc.
Package:
Tape & Reel (TR)
Description:
IC DRAM 8GBIT PARALLEL 96FBGA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MT40A512M16LY-062E:E TR is a high-performance DDR4 SDRAM module manufactured by Micron Technology Inc. This integrated circuit is designed to meet the demanding requirements of various applications, including consumer, enterprise, and networking systems. With its advanced 40nm technology node and robust feature set, it offers enhanced data accuracy, reliability, and performance.

Key Specifications

Specification Value
DRAM Type DDR4 SDRAM
DRAM Density 8 Gbit (512M x 16)
Clock Frequency 1.6 GHz
Memory Configuration 512M x 16
Supply Voltage Nominal 1.2V ±60mV
Access Time 625 ps
Package Type 96-Pin FBGA (Fine-Pitch Ball Grid Array)
Operating Temperature Range -40°C to 125°C
Refresh Time 64ms at -40°C to 85°C, 32ms at 85°C to 95°C, 16ms at 95°C to 105°C, 8ms at 105°C to 125°C
Internal Banks 16 internal banks (x8): 4 groups of 4 banks each; 8 internal banks (x16): 2 groups of 4 banks each
Prefetch Architecture 8n-bit prefetch architecture
RoHS Compliance Yes

Key Features

  • Advanced Error Correction: Features on-die error correction code (ECC) for improved data accuracy.
  • High-Speed Operation: Operates up to 2666 Mbps, with a clock frequency of 1.6 GHz.
  • Low Power Consumption: Includes low-power auto self refresh (LPASR) and temperature-controlled refresh (TCR) for maximum power saving.
  • Robust Reliability: Supports data bus inversion (DBI), command/address (CA) parity, and databus write cyclic redundancy check (CRC).
  • Flexible Configuration: Programmable data strobe preambles, data strobe preamble training, and multipurpose register read and write capability.
  • Thermal Management: Equipped with Micron's thermal- and stress-management technology to extend device endurance.
  • JEDEC Compliance: Compliant with JEDEC JESD-79-4 standards.

Applications

The MT40A512M16LY-062E:E TR is designed for use in a variety of applications, including:

  • Consumer Electronics: Suitable for high-performance consumer devices such as smartphones, tablets, and laptops.
  • Enterprise Systems: Ideal for server and data center applications requiring high reliability and performance.
  • Networking Equipment: Used in network routers, switches, and other networking devices that demand high-speed data transfer.

Q & A

  1. What is the DRAM type of the MT40A512M16LY-062E:E TR?

    The DRAM type is DDR4 SDRAM.

  2. What is the memory configuration of this module?

    The memory configuration is 512M x 16.

  3. What is the clock frequency of the MT40A512M16LY-062E:E TR?

    The clock frequency is 1.6 GHz.

  4. What is the operating temperature range of this module?

    The operating temperature range is -40°C to 125°C.

  5. Does the MT40A512M16LY-062E:E TR support ECC?

    Yes, it supports on-die error correction code (ECC) for improved data accuracy.

  6. What is the package type of the MT40A512M16LY-062E:E TR?

    The package type is 96-Pin FBGA (Fine-Pitch Ball Grid Array).

  7. Is the MT40A512M16LY-062E:E TR RoHS compliant?

    Yes, it is RoHS compliant.

  8. What are some of the key features for power management in the MT40A512M16LY-062E:E TR?

    It includes low-power auto self refresh (LPASR) and temperature-controlled refresh (TCR) for maximum power saving.

  9. What are the typical applications for the MT40A512M16LY-062E:E TR?

    It is used in consumer electronics, enterprise systems, and networking equipment.

  10. Does the MT40A512M16LY-062E:E TR support data bus inversion and parity checks?

    Yes, it supports data bus inversion (DBI) and command/address (CA) parity.

Product Attributes

Memory Type:Volatile
Memory Format:DRAM
Technology:SDRAM - DDR4
Memory Size:8Gb (512M x 16)
Memory Interface:Parallel
Clock Frequency:1.6 GHz
Write Cycle Time - Word, Page:- 
Access Time:- 
Voltage - Supply:1.14V ~ 1.26V
Operating Temperature:0°C ~ 95°C (TC)
Mounting Type:Surface Mount
Package / Case:96-TFBGA
Supplier Device Package:96-FBGA (7.5x13.5)
0 Remaining View Similar

In Stock

$9.30
84

Please send RFQ , we will respond immediately.

Same Series
MT40A512M16LY-062E IT:E
MT40A512M16LY-062E IT:E
IC DRAM 8GBIT PARALLEL 96FBGA
MT40A512M16LY-062E:E TR
MT40A512M16LY-062E:E TR
IC DRAM 8GBIT PARALLEL 96FBGA
MT40A1G8WE-075E AIT:B TR
MT40A1G8WE-075E AIT:B TR
IC DRAM 8GBIT PARALLEL 78FBGA
MT40A1G8WE-075E IT:B TR
MT40A1G8WE-075E IT:B TR
IC DRAM 8GBIT PARALLEL 78FBGA
MT40A1G8WE-083E AUT:B TR
MT40A1G8WE-083E AUT:B TR
IC DRAM 8GBIT PARALLEL 78FBGA
MT40A512M16JY-083E IT:B TR
MT40A512M16JY-083E IT:B TR
IC DRAM 8GBIT PARALLEL 96FBGA
MT40A2G4WE-075E:B TR
MT40A2G4WE-075E:B TR
IC DRAM 8GBIT PARALLEL 78FBGA
MT40A512M16JY-083E:B TR
MT40A512M16JY-083E:B TR
IC DRAM 8GBIT PARALLEL 96FBGA
MT40A512M16JY-062E:B TR
MT40A512M16JY-062E:B TR
IC DRAM 8GBIT PARALLEL 96FBGA
MT40A512M16HA-083E:A
MT40A512M16HA-083E:A
IC DRAM 8GBIT PARALLEL 96FBGA
MT40A512M16HA-083E IT:A
MT40A512M16HA-083E IT:A
IC DRAM 8GBIT PARALLEL 96FBGA
MT40A1G8WE-083E AIT:B
MT40A1G8WE-083E AIT:B
IC DRAM 8GBIT PARALLEL 78FBGA

Related Product By Categories

M24C02-WMN6TP
M24C02-WMN6TP
STMicroelectronics
IC EEPROM 2KBIT I2C 400KHZ 8SO
24LC128T-I/SN
24LC128T-I/SN
Microchip Technology
IC EEPROM 128KBIT I2C 8SOIC
SST26VF032BT-104I/SM
SST26VF032BT-104I/SM
Microchip Technology
IC FLASH 32MBIT SPI/QUAD 8SOIJ
M95010-RMN6TP
M95010-RMN6TP
STMicroelectronics
IC EEPROM 1KBIT SPI 20MHZ 8SO
M95512-WMN6TP
M95512-WMN6TP
STMicroelectronics
IC EEPROM 512KBIT SPI 16MHZ 8SO
M95020-WMN6P
M95020-WMN6P
STMicroelectronics
IC EEPROM 2KBIT SPI 20MHZ 8SO
W25Q128JVEIQ TR
W25Q128JVEIQ TR
Winbond Electronics
IC FLASH 128MBIT SPI/QUAD 8WSON
MT25QL256ABA8ESF-0AAT
MT25QL256ABA8ESF-0AAT
Micron Technology Inc.
IC FLASH 256MBIT SPI 16SOP2
M27C4001-90C1
M27C4001-90C1
STMicroelectronics
IC EPROM 4MBIT PARALLEL 32PLCC
CAT25080YI-GT3JN
CAT25080YI-GT3JN
onsemi
IC EEPROM 8KBIT SPI 20MHZ 8TSSOP
M25P16S-VMN6TP TR
M25P16S-VMN6TP TR
Micron Technology Inc.
IC FLASH 16MBIT SPI 75MHZ 8SO
PCF8594C-2T/02,112
PCF8594C-2T/02,112
NXP USA Inc.
IC EEPROM 4KBIT I2C 100KHZ 8SO

Related Product By Brand

MT25QU256ABA1EW9-0SIT TR
MT25QU256ABA1EW9-0SIT TR
Micron Technology Inc.
IC FLASH 256MBIT SPI 8WPDFN
MT40A512M16LY-062E:E
MT40A512M16LY-062E:E
Micron Technology Inc.
IC DRAM 8GBIT PARALLEL 96FBGA
MT29F4G08ABAFAWP-IT:F TR
MT29F4G08ABAFAWP-IT:F TR
Micron Technology Inc.
IC FLASH 4GBIT PARALLEL 48TSOP I
MT41K128M16JT-125 AUT:K
MT41K128M16JT-125 AUT:K
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 96FBGA
M29F400BB70N6T TR
M29F400BB70N6T TR
Micron Technology Inc.
IC FLASH 4MBIT PARALLEL 48TSOP
M29W640GB70NA6E
M29W640GB70NA6E
Micron Technology Inc.
IC FLASH 64MBIT PARALLEL 48TSOP
M45PE40-VMP6G
M45PE40-VMP6G
Micron Technology Inc.
IC FLASH 4MBIT SPI 75MHZ 8VDFPN
M25PE20-VMN6P
M25PE20-VMN6P
Micron Technology Inc.
IC FLASH 2MBIT SPI 75MHZ 8SO
M25P16-VMN6PBA
M25P16-VMN6PBA
Micron Technology Inc.
IC FLASH 16MBIT SPI 75MHZ 8SO
M29W640GL70NB6F TR
M29W640GL70NB6F TR
Micron Technology Inc.
IC FLASH 64MBIT PARALLEL 56TSOP
M25P16-VMC6G
M25P16-VMC6G
Micron Technology Inc.
IC FLSH 16MBIT SPI 75MHZ 8UFDFPN
M25P128-VMFPBALT
M25P128-VMFPBALT
Micron Technology Inc.
IC FLSH 128MBIT SPI 50MHZ 16SO W