MT40A512M16LY-062E:E
  • Share:

Micron Technology Inc. MT40A512M16LY-062E:E

Manufacturer No:
MT40A512M16LY-062E:E
Manufacturer:
Micron Technology Inc.
Package:
Tray
Description:
IC DRAM 8GBIT PARALLEL 96FBGA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MT40A512M16LY-062E:E is a DDR4 SDRAM (Synchronous Dynamic Random Access Memory) module manufactured by Micron Technology Inc. This memory IC is designed to provide high-speed data storage and retrieval capabilities, making it an essential component in various electronic devices. The module is identified by the prefix MT40A, indicating it is part of Micron's DDR4 SDRAM product line. The '512M16' part of the model number signifies that the module has a capacity of 512 megabits (Mb) and is organized as 16 megabytes (MB) x 16 bits. The 'LY' code represents specific DRAM technology and features, while '062E' indicates the speed grade, which is DDR4-2666, offering a maximum data transfer rate of 2666 MT/s (millions of transfers per second).

Key Specifications

Type Parameter
Technology SDRAM - DDR4
Memory Type Volatile
Memory Format DRAM
Memory Size 8 Gbit
Memory Organization 512M x 16
Memory Interface Parallel
Clock Frequency 1.6 GHz
Access Time 13.75 ns (625 ps for data transfer)
Supply Voltage 1.14V ~ 1.26V (nominal 1.2V)
Operating Temperature -40°C ~ 95°C (TC)
Package / Case FBGA-96

Key Features

  • High Data Transfer Rate: The MT40A512M16LY-062E:E provides a high data transfer rate of up to 2666 MT/s, making it suitable for applications requiring fast and efficient memory access.
  • Improved Bandwidth Efficiency: This module is designed to improve bandwidth efficiency, allowing for more data to be transferred in a given amount of time, thus enhancing overall system performance and responsiveness.
  • Low Power Consumption: Despite its high performance, the module is designed for low power consumption, which is crucial for mobile devices and other applications where power efficiency is important.
  • Internal Banks and Prefetch Architecture: The module is internally organized into 16 banks (4 groups of 4 banks each for x4/x8 devices and 2 groups of 4 banks each for x16 devices) and uses an 8n-bit prefetch architecture for high-speed operation.
  • Advanced Features: Includes features such as on-die VREFDQ generation, programmable data strobe preambles, command/address latency (CAL), write leveling, self-refresh mode, low-power auto self-refresh (LPASR), and temperature-controlled refresh (TCR).
  • Signal Integrity and Reliability: The module requires careful consideration of circuit design, PCB layout, and signal integrity to ensure optimal performance and reliability.

Applications

The MT40A512M16LY-062E:E memory module is designed for use in a wide range of applications that require fast and reliable memory performance. These include:

  • Smartphones and mobile devices
  • Laptops and desktop computers
  • Servers and data centers
  • Network equipment and routers
  • Gaming systems and multimedia editing devices
  • Industrial and automotive systems due to its industrial temperature range (-40°C to 95°C).

Q & A

  1. What is the memory type of the MT40A512M16LY-062E:E?

    The MT40A512M16LY-062E:E is a DDR4 SDRAM (Synchronous Dynamic Random Access Memory) module.

  2. What is the memory capacity and organization of this module?

    The module has a capacity of 8 Gbits and is organized as 512M x 16 bits.

  3. What is the clock frequency of the MT40A512M16LY-062E:E?

    The clock frequency is 1.6 GHz.

  4. What is the supply voltage range for this module?

    The supply voltage range is 1.14V to 1.26V, with a nominal voltage of 1.2V.

  5. What is the operating temperature range of the MT40A512M16LY-062E:E?

    The operating temperature range is -40°C to 95°C.

  6. What package type does the MT40A512M16LY-062E:E use?

    The module uses a 96-pin FBGA (Fine-Pitch Ball Grid Array) package.

  7. What are some key features of the MT40A512M16LY-062E:E?

    Key features include high data transfer rate, improved bandwidth efficiency, low power consumption, and advanced signal integrity features.

  8. What applications is the MT40A512M16LY-062E:E suitable for?

    The module is suitable for smartphones, laptops, servers, network equipment, gaming systems, and industrial applications.

  9. How does the module ensure signal integrity and reliability?

    The module requires careful circuit design, PCB layout, and signal integrity considerations to ensure optimal performance and reliability.

  10. Is the MT40A512M16LY-062E:E RoHS compliant?

    Yes, the module is RoHS compliant..

Product Attributes

Memory Type:Volatile
Memory Format:DRAM
Technology:SDRAM - DDR4
Memory Size:8Gb (512M x 16)
Memory Interface:Parallel
Clock Frequency:1.6 GHz
Write Cycle Time - Word, Page:- 
Access Time:- 
Voltage - Supply:1.14V ~ 1.26V
Operating Temperature:0°C ~ 95°C (TC)
Mounting Type:Surface Mount
Package / Case:96-TFBGA
Supplier Device Package:96-FBGA (7.5x13.5)
0 Remaining View Similar

In Stock

$13.00
43

Please send RFQ , we will respond immediately.

Same Series
MT40A2G4WE-083E:B TR
MT40A2G4WE-083E:B TR
IC DRAM 8GBIT PARALLEL 78FBGA
MT40A512M16LY-062E:E
MT40A512M16LY-062E:E
IC DRAM 8GBIT PARALLEL 96FBGA
MT40A512M16LY-062E IT:E
MT40A512M16LY-062E IT:E
IC DRAM 8GBIT PARALLEL 96FBGA
MT40A2G4SA-075:E
MT40A2G4SA-075:E
IC DRAM 8GBIT PARALLEL 78FBGA
MT40A512M16HA-083E IT:A TR
MT40A512M16HA-083E IT:A TR
IC DRAM 8GBIT PARALLEL 96FBGA
MT40A512M16JY-075E AIT:B TR
MT40A512M16JY-075E AIT:B TR
IC DRAM 8GBIT PARALLEL 96FBGA
MT40A2G4WE-075E:D TR
MT40A2G4WE-075E:D TR
IC DRAM 8GBIT PARALLEL 78FBGA
MT40A1G8WE-075E AIT:B
MT40A1G8WE-075E AIT:B
IC DRAM 8GBIT PARALLEL 78FBGA
MT40A1G8WE-075E IT:B
MT40A1G8WE-075E IT:B
IC DRAM 8GBIT PARALLEL 78FBGA
MT40A1G8WE-083E AIT:B
MT40A1G8WE-083E AIT:B
IC DRAM 8GBIT PARALLEL 78FBGA
MT40A512M16JY-075E IT:B
MT40A512M16JY-075E IT:B
IC DRAM 8GBIT PARALLEL 96FBGA
MT40A512M16JY-083E AAT:B
MT40A512M16JY-083E AAT:B
IC DRAM 8GBIT PARALLEL 96FBGA

Related Product By Categories

M29F800FB5AN6F2
M29F800FB5AN6F2
Alliance Memory, Inc.
IC FLASH 8MBIT PARALLEL 48TSOP
CAV93C86VE-GT3
CAV93C86VE-GT3
onsemi
IC EEPROM 16KBIT SPI 2MHZ 8SOIC
PCF85103C-2T/00118
PCF85103C-2T/00118
NXP USA Inc.
256 X 8-BIT EEPROM WITH I2C
M95320-DWDW4TP/K
M95320-DWDW4TP/K
STMicroelectronics
IC EEPROM 32KBIT SPI 8TSSOP
AT24C02A-10PC-2.5
AT24C02A-10PC-2.5
Microchip Technology
IC EEPROM 2KBIT I2C 400KHZ 8DIP
M27C512-12B1
M27C512-12B1
STMicroelectronics
IC EPROM 512KBIT PARALLEL 28DIP
M93C46-MN6T
M93C46-MN6T
STMicroelectronics
IC EEPROM 1KBIT SPI 2MHZ 8SO
M29F400BB70N6E
M29F400BB70N6E
Micron Technology Inc.
IC FLASH 4MBIT PARALLEL 48TSOP
M93C46-RDS6G
M93C46-RDS6G
STMicroelectronics
IC EEPROM 1KBIT SPI 1MHZ 8TSSOP
M95020-WMN6T
M95020-WMN6T
STMicroelectronics
IC EEPROM 2KBIT SPI 20MHZ 8SO
CAT25080YI-GT3JN
CAT25080YI-GT3JN
onsemi
IC EEPROM 8KBIT SPI 20MHZ 8TSSOP
AT45DB642D-TU
AT45DB642D-TU
Adesto Technologies
IC FLASH 64MBIT SPI 66MHZ 28TSOP

Related Product By Brand

M25P16-VMF6P
M25P16-VMF6P
Micron Technology Inc.
IC FLASH 16MBIT SPI 75MHZ 16SO W
M29F010B45K6E
M29F010B45K6E
Micron Technology Inc.
IC FLASH 1MBIT PARALLEL 32PLCC
M29W160EB70N6F TR
M29W160EB70N6F TR
Micron Technology Inc.
IC FLASH 16MBIT PARALLEL 48TSOP
M29W640GB70NA6E
M29W640GB70NA6E
Micron Technology Inc.
IC FLASH 64MBIT PARALLEL 48TSOP
M25P32-VMF3TPB TR
M25P32-VMF3TPB TR
Micron Technology Inc.
IC FLASH 32MBIT SPI 75MHZ 16SO W
MT47H128M16RT-25E XIT:C
MT47H128M16RT-25E XIT:C
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 84FBGA
MT48LC16M16A2P-6A:G
MT48LC16M16A2P-6A:G
Micron Technology Inc.
IC DRAM 256MBIT PAR 54TSOP II
M29W320DB7AN6F TR
M29W320DB7AN6F TR
Micron Technology Inc.
IC FLASH 32MBIT PARALLEL 48TSOP
M29W320DB7AZA6F TR
M29W320DB7AZA6F TR
Micron Technology Inc.
IC FLASH 32MBIT PARALLEL 63TFBGA
M25P40-VMW6GB
M25P40-VMW6GB
Micron Technology Inc.
IC FLASH 4MBIT SPI 75MHZ 8SO W
MTFC32GAPALBH-AIT ES
MTFC32GAPALBH-AIT ES
Micron Technology Inc.
IC FLASH 256GBIT MMC 153TFBGA
MT29F2G08ABAEAWP-E:E
MT29F2G08ABAEAWP-E:E
Micron Technology Inc.
IC FLASH 2GBIT PARALLEL 48TSOP I