MT40A512M16LY-062E:E
  • Share:

Micron Technology Inc. MT40A512M16LY-062E:E

Manufacturer No:
MT40A512M16LY-062E:E
Manufacturer:
Micron Technology Inc.
Package:
Tray
Description:
IC DRAM 8GBIT PARALLEL 96FBGA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MT40A512M16LY-062E:E is a DDR4 SDRAM (Synchronous Dynamic Random Access Memory) module manufactured by Micron Technology Inc. This memory IC is designed to provide high-speed data storage and retrieval capabilities, making it an essential component in various electronic devices. The module is identified by the prefix MT40A, indicating it is part of Micron's DDR4 SDRAM product line. The '512M16' part of the model number signifies that the module has a capacity of 512 megabits (Mb) and is organized as 16 megabytes (MB) x 16 bits. The 'LY' code represents specific DRAM technology and features, while '062E' indicates the speed grade, which is DDR4-2666, offering a maximum data transfer rate of 2666 MT/s (millions of transfers per second).

Key Specifications

Type Parameter
Technology SDRAM - DDR4
Memory Type Volatile
Memory Format DRAM
Memory Size 8 Gbit
Memory Organization 512M x 16
Memory Interface Parallel
Clock Frequency 1.6 GHz
Access Time 13.75 ns (625 ps for data transfer)
Supply Voltage 1.14V ~ 1.26V (nominal 1.2V)
Operating Temperature -40°C ~ 95°C (TC)
Package / Case FBGA-96

Key Features

  • High Data Transfer Rate: The MT40A512M16LY-062E:E provides a high data transfer rate of up to 2666 MT/s, making it suitable for applications requiring fast and efficient memory access.
  • Improved Bandwidth Efficiency: This module is designed to improve bandwidth efficiency, allowing for more data to be transferred in a given amount of time, thus enhancing overall system performance and responsiveness.
  • Low Power Consumption: Despite its high performance, the module is designed for low power consumption, which is crucial for mobile devices and other applications where power efficiency is important.
  • Internal Banks and Prefetch Architecture: The module is internally organized into 16 banks (4 groups of 4 banks each for x4/x8 devices and 2 groups of 4 banks each for x16 devices) and uses an 8n-bit prefetch architecture for high-speed operation.
  • Advanced Features: Includes features such as on-die VREFDQ generation, programmable data strobe preambles, command/address latency (CAL), write leveling, self-refresh mode, low-power auto self-refresh (LPASR), and temperature-controlled refresh (TCR).
  • Signal Integrity and Reliability: The module requires careful consideration of circuit design, PCB layout, and signal integrity to ensure optimal performance and reliability.

Applications

The MT40A512M16LY-062E:E memory module is designed for use in a wide range of applications that require fast and reliable memory performance. These include:

  • Smartphones and mobile devices
  • Laptops and desktop computers
  • Servers and data centers
  • Network equipment and routers
  • Gaming systems and multimedia editing devices
  • Industrial and automotive systems due to its industrial temperature range (-40°C to 95°C).

Q & A

  1. What is the memory type of the MT40A512M16LY-062E:E?

    The MT40A512M16LY-062E:E is a DDR4 SDRAM (Synchronous Dynamic Random Access Memory) module.

  2. What is the memory capacity and organization of this module?

    The module has a capacity of 8 Gbits and is organized as 512M x 16 bits.

  3. What is the clock frequency of the MT40A512M16LY-062E:E?

    The clock frequency is 1.6 GHz.

  4. What is the supply voltage range for this module?

    The supply voltage range is 1.14V to 1.26V, with a nominal voltage of 1.2V.

  5. What is the operating temperature range of the MT40A512M16LY-062E:E?

    The operating temperature range is -40°C to 95°C.

  6. What package type does the MT40A512M16LY-062E:E use?

    The module uses a 96-pin FBGA (Fine-Pitch Ball Grid Array) package.

  7. What are some key features of the MT40A512M16LY-062E:E?

    Key features include high data transfer rate, improved bandwidth efficiency, low power consumption, and advanced signal integrity features.

  8. What applications is the MT40A512M16LY-062E:E suitable for?

    The module is suitable for smartphones, laptops, servers, network equipment, gaming systems, and industrial applications.

  9. How does the module ensure signal integrity and reliability?

    The module requires careful circuit design, PCB layout, and signal integrity considerations to ensure optimal performance and reliability.

  10. Is the MT40A512M16LY-062E:E RoHS compliant?

    Yes, the module is RoHS compliant..

Product Attributes

Memory Type:Volatile
Memory Format:DRAM
Technology:SDRAM - DDR4
Memory Size:8Gb (512M x 16)
Memory Interface:Parallel
Clock Frequency:1.6 GHz
Write Cycle Time - Word, Page:- 
Access Time:- 
Voltage - Supply:1.14V ~ 1.26V
Operating Temperature:0°C ~ 95°C (TC)
Mounting Type:Surface Mount
Package / Case:96-TFBGA
Supplier Device Package:96-FBGA (7.5x13.5)
0 Remaining View Similar

In Stock

$13.00
43

Please send RFQ , we will respond immediately.

Same Series
MT40A2G4SA-075:E TR
MT40A2G4SA-075:E TR
IC DRAM 8GBIT PARALLEL 78FBGA
MT40A1G8WE-075E IT:B TR
MT40A1G8WE-075E IT:B TR
IC DRAM 8GBIT PARALLEL 78FBGA
MT40A1G8WE-083E AAT:B TR
MT40A1G8WE-083E AAT:B TR
IC DRAM 8GBIT PARALLEL 78FBGA
MT40A512M16JY-083E IT:B TR
MT40A512M16JY-083E IT:B TR
IC DRAM 8GBIT PARALLEL 96FBGA
MT40A1G8WE-075E:B TR
MT40A1G8WE-075E:B TR
IC DRAM 8GBIT PARALLEL 78FBGA
MT40A1G8WE-075E:D
MT40A1G8WE-075E:D
IC DRAM 8GBIT PARALLEL 78FBGA
MT40A1G8PM-083E:A TR
MT40A1G8PM-083E:A TR
IC DRAM 8GBIT PARALLEL 78FBGA
MT40A512M16HA-083E:A
MT40A512M16HA-083E:A
IC DRAM 8GBIT PARALLEL 96FBGA
MT40A1G8WE-075E IT:B
MT40A1G8WE-075E IT:B
IC DRAM 8GBIT PARALLEL 78FBGA
MT40A2G4WE-083E:B
MT40A2G4WE-083E:B
IC DRAM 8GBIT PARALLEL 78FBGA
MT40A512M16JY-075E AIT:B
MT40A512M16JY-075E AIT:B
IC DRAM 8GBIT PARALLEL 96FBGA
MT40A512M16LY-062E IT:E TR
MT40A512M16LY-062E IT:E TR
IC DRAM 8GBIT PARALLEL 96FBGA

Related Product By Categories

M24C02-FMC6TG
M24C02-FMC6TG
STMicroelectronics
IC EEPROM 2KBIT I2C 8UFDFPN
M24128-DFCS6TP/K
M24128-DFCS6TP/K
STMicroelectronics
IC EEPROM 128KBIT I2C 8WLCSP
AT45DB041E-SHN-T
AT45DB041E-SHN-T
Adesto Technologies
IC FLASH 4MBIT SPI 85MHZ 8SOIC
SST26VF032BT-104I/SM
SST26VF032BT-104I/SM
Microchip Technology
IC FLASH 32MBIT SPI/QUAD 8SOIJ
M24256-BRMN6TP
M24256-BRMN6TP
STMicroelectronics
IC EEPROM 256KBIT I2C 1MHZ 8SO
CAT25010VI-GT3A
CAT25010VI-GT3A
onsemi
IC EEPROM 1KBIT SPI 20MHZ 8SOIC
M27C256B-12C1
M27C256B-12C1
STMicroelectronics
IC EPROM 256KBIT PARALLEL 32PLCC
AT24C02BN-SH-T
AT24C02BN-SH-T
Microchip Technology
IC EEPROM 2KBIT I2C 1MHZ 8SOIC
M93C46-RDS6G
M93C46-RDS6G
STMicroelectronics
IC EEPROM 1KBIT SPI 1MHZ 8TSSOP
M95020-WMN6T
M95020-WMN6T
STMicroelectronics
IC EEPROM 2KBIT SPI 20MHZ 8SO
M29W640FT70N6F TR
M29W640FT70N6F TR
Micron Technology Inc.
IC FLASH 64MBIT PARALLEL 48TSOP
M25P40-VMN6YPB
M25P40-VMN6YPB
Micron Technology Inc.
IC FLASH 4MBIT SPI 75MHZ 8SO

Related Product By Brand

MT25QU256ABA8ESF-0SIT TR
MT25QU256ABA8ESF-0SIT TR
Micron Technology Inc.
IC FLASH 256MBIT SPI 133MHZ 16SO
MT47H128M16RT-25E AIT:C TR
MT47H128M16RT-25E AIT:C TR
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 84FBGA
MT47H32M16NF-25E:H TR
MT47H32M16NF-25E:H TR
Micron Technology Inc.
IC DRAM 512MBIT PARALLEL 84FBGA
MT41K256M16TW-107 AUT:P TR
MT41K256M16TW-107 AUT:P TR
Micron Technology Inc.
IC DRAM 4GBIT PARALLEL 96FBGA
MTFC32GAZAQHD-AIT TR
MTFC32GAZAQHD-AIT TR
Micron Technology Inc.
IC FLASH 256GB EMMC
MT53D1024M32D4DT-046 AIT:D
MT53D1024M32D4DT-046 AIT:D
Micron Technology Inc.
IC DRAM 32GBIT 2133MHZ 200VFBGA
MT41J128M16JT-125:K TR
MT41J128M16JT-125:K TR
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 96FBGA
M28W640HCB70N6E
M28W640HCB70N6E
Micron Technology Inc.
IC FLASH 64MBIT PARALLEL 48TSOP
M25P16-VMN3PB
M25P16-VMN3PB
Micron Technology Inc.
IC FLASH 16MBIT SPI 75MHZ 8SO
M25P80-VMN3PB
M25P80-VMN3PB
Micron Technology Inc.
IC FLASH 8MBIT SPI 75MHZ 8SO
MT47H128M16RT-25E XIT:C
MT47H128M16RT-25E XIT:C
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 84FBGA
MT41K256M16TW-107 V:P TR
MT41K256M16TW-107 V:P TR
Micron Technology Inc.
IC DRAM 4GBIT PARALLEL 96FBGA