MT29F8G08ADBDAH4-AAT:D TR
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Micron Technology Inc. MT29F8G08ADBDAH4-AAT:D TR

Manufacturer No:
MT29F8G08ADBDAH4-AAT:D TR
Manufacturer:
Micron Technology Inc.
Package:
Tape & Reel (TR)
Description:
IC FLASH 8GBIT PARALLEL 63VFBGA
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The MT29F8G08ADBDAH4-AAT:D TR is a high-capacity NAND Flash memory device produced by Micron Technology Inc. This component is part of Micron's single-supply NAND Flash memory family, designed to meet the storage needs of various electronic systems. It offers a robust and reliable storage solution with advanced features and specifications.

Key Specifications

SpecificationValue
Memory TypeNon-Volatile FLASH - NAND
Memory Size8Gb (1G x 8)
Device Widthx8
Page Size2,112 bytes (2,048 + 64 bytes)
Block Size64 pages (128K + 4K bytes)
Number of Blocks8,192 blocks
Operating Voltage Range2.7V–3.6V
Operating Temperature RangeCommercial (0°C to 70°C) or Extended (-40°C to +85°C)
Package Type48-pin TSOP Type I (lead-free)
Read PerformanceRandom read: 25µs, Sequential read: as specified

Key Features

  • Multiplexed Interface: Supports both x8 and x16 configurations.
  • Hardware Write Protection: WP# pin for hardware write protection.
  • Ready/Busy# Pin: Provides a hardware method for detecting program or erase cycle completion.
  • Prefetch on Power-Up: PRE pin for prefetch on power-up.
  • Multiple Die Configurations: Available in single-die, dual-die stack, and quad-die stack configurations.
  • Advanced Package Options: 48-pin TSOP Type I packages, including lead-free options.

Applications

The MT29F8G08ADBDAH4-AAT:D TR NAND Flash memory is suitable for a wide range of applications, including:

  • Consumer Electronics: Smartphones, tablets, and other portable devices.
  • Industrial Systems: Embedded systems, industrial control systems, and IoT devices.
  • Automotive Systems: Infotainment systems, navigation systems, and other automotive electronics.
  • Storage Solutions: Solid-state drives (SSDs), USB drives, and other storage devices.

Q & A

  1. What is the memory size of the MT29F8G08ADBDAH4-AAT:D TR? The memory size is 8Gb (1G x 8).
  2. What are the operating voltage and temperature ranges for this device? The operating voltage range is 2.7V–3.6V, and the operating temperature range is either commercial (0°C to 70°C) or extended (-40°C to +85°C).
  3. What type of package does this device use? It uses a 48-pin TSOP Type I package, which is lead-free.
  4. Does the device support hardware write protection? Yes, it supports hardware write protection through the WP# pin.
  5. How does the device indicate program or erase cycle completion? The device uses the Ready/Busy# (R/B#) pin to indicate program or erase cycle completion.
  6. What are the page and block sizes of this NAND Flash memory? The page size is 2,112 bytes (2,048 + 64 bytes), and the block size is 64 pages (128K + 4K bytes).
  7. What is the read performance of the MT29F8G08ADBDAH4-AAT:D TR? The random read time is 25µs, and sequential read times are as specified in the datasheet.
  8. Is the device available in different die configurations? Yes, it is available in single-die, dual-die stack, and quad-die stack configurations.
  9. What are some common applications for this NAND Flash memory? Common applications include consumer electronics, industrial systems, automotive systems, and storage solutions.
  10. Where can I find more detailed specifications for this device? Detailed specifications can be found in the datasheet available on Micron Technology's website or through distributors like Digi-Key and Mouser.

Product Attributes

Memory Type:Non-Volatile
Memory Format:Flash
Technology:FLASH - NAND
Memory Size:8Gb (1G x 8)
Memory Interface:Parallel
Clock Frequency:- 
Write Cycle Time - Word, Page:- 
Access Time:- 
Voltage - Supply:1.7V ~ 1.95V
Operating Temperature:-40°C ~ 105°C (TA)
Mounting Type:Surface Mount
Package / Case:63-VFBGA
Supplier Device Package:63-VFBGA (9x11)
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