M29DW323DT70N6F TR
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Micron Technology Inc. M29DW323DT70N6F TR

Manufacturer No:
M29DW323DT70N6F TR
Manufacturer:
Micron Technology Inc.
Package:
Tape & Reel (TR)
Description:
IC FLASH 32MBIT PARALLEL 48TSOP
Delivery:
Payment:
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Product Introduction

Overview

The M29DW323DT70N6F TR is a 32 Mbit (4M x 8 or 2M x 16) non-volatile Flash memory integrated circuit produced by Micron Technology Inc. This device is part of Micron's extensive portfolio of memory and storage solutions, designed to support a wide range of applications requiring reliable and efficient data storage. The M29DW323DT70N6F TR operates on a single low voltage supply (2.7 to 3.6V) and features dual bank architecture, allowing for simultaneous read and write operations in different banks.

Micron Technology is a leading innovator in memory and storage solutions, contributing significantly to advancements in technologies such as artificial intelligence, the Internet of Things, and more.

Key Specifications

Category Description
Manufacturer Micron Technology Inc.
Memory Type Non-Volatile
Memory Format FLASH - NOR
Memory Size 32Mb (4M x 8, 2M x 16)
Memory Interface Parallel
Data Bus Width 8 bit/16 bit
Access Time 70 ns
Supply Voltage 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Package / Case 48-TSOP (12x20mm)
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)

Key Features

  • Dual Bank Architecture: The device is divided into two banks (A and B), allowing read operations in one bank while programming or erasing in the other.
  • Extended Memory Block: An extra 32 KWord (x16 mode) or 64 KByte (x8 mode) block for storing security information or additional data.
  • Block Protection: Blocks can be protected to prevent accidental program or erase commands.
  • On-chip Program/Erase Controller: Simplifies programming and erasing by managing special operations required to update memory contents.
  • Erase Suspend and Resume Modes: Allows reading and programming another block during erase suspend.
  • Unlock Bypass Program Command: Enables faster production/batch programming.
  • VPP/WP Pin for Fast Program and Write Protect: Supports fast programming and write protection.
  • Temporary Block Unprotection Mode: Allows temporary unprotection of blocks.
  • Common Flash Interface: Includes a 64-bit security code.
  • Low Power Consumption: Features standby and automatic standby modes.
  • Program/Erase Cycles: Up to 100,000 cycles per block.

Applications

The M29DW323DT70N6F TR is suitable for a variety of applications that require reliable and efficient non-volatile memory. These include:

  • Embedded systems requiring persistent data storage.
  • Industrial control systems and automation.
  • Aerospace and defense systems.
  • Automotive systems, especially those requiring data logging and configuration storage.
  • Internet of Things (IoT) devices needing secure and efficient data storage.

Q & A

  1. What is the memory size of the M29DW323DT70N6F TR?

    The memory size is 32Mb, organized as 4M x 8 or 2M x 16.

  2. What is the supply voltage range for the M29DW323DT70N6F TR?

    The supply voltage range is 2.7V to 3.6V.

  3. What is the access time of the M29DW323DT70N6F TR?

    The access time is 70 ns.

  4. Does the M29DW323DT70N6F TR support dual bank operations?

    Yes, it supports dual bank operations, allowing read operations in one bank while programming or erasing in the other.

  5. How many program/erase cycles does the M29DW323DT70N6F TR support per block?

    It supports up to 100,000 program/erase cycles per block.

  6. What is the purpose of the Extended Memory Block in the M29DW323DT70N6F TR?

    The Extended Memory Block is used for storing security information or additional data.

  7. Is the M29DW323DT70N6F TR RoHS compliant?

    Yes, it is ROHS3 compliant.

  8. What is the operating temperature range of the M29DW323DT70N6F TR?

    The operating temperature range is -40°C to 85°C.

  9. What package types are available for the M29DW323DT70N6F TR?

    It is available in 48-TSOP (12x20mm) and 48-TFBGA (6x8mm, 0.8mm pitch) packages.

  10. Does the M29DW323DT70N6F TR support erase suspend and resume modes?

    Yes, it supports erase suspend and resume modes, allowing reading and programming another block during erase suspend.

  11. What is the significance of the VPP/WP pin in the M29DW323DT70N6F TR?

    The VPP/WP pin is used for fast programming and write protection.

Product Attributes

Memory Type:Non-Volatile
Memory Format:Flash
Technology:FLASH - NOR
Memory Size:32Mb (4M x 8, 2M x 16)
Memory Interface:Parallel
Clock Frequency:- 
Write Cycle Time - Word, Page:70ns
Access Time:70 ns
Voltage - Supply:2.7V ~ 3.6V
Operating Temperature:-40°C ~ 85°C (TA)
Mounting Type:Surface Mount
Package / Case:48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package:48-TSOP
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Similar Products

Part Number M29DW323DT70N6F TR M29DW323DB70N6F TR
Manufacturer Micron Technology Inc. Micron Technology Inc.
Product Status Obsolete Obsolete
Memory Type Non-Volatile Non-Volatile
Memory Format Flash Flash
Technology FLASH - NOR FLASH - NOR
Memory Size 32Mb (4M x 8, 2M x 16) 32Mb (4M x 8, 2M x 16)
Memory Interface Parallel Parallel
Clock Frequency - -
Write Cycle Time - Word, Page 70ns 70ns
Access Time 70 ns 70 ns
Voltage - Supply 2.7V ~ 3.6V 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA) -40°C ~ 85°C (TA)
Mounting Type Surface Mount Surface Mount
Package / Case 48-TFSOP (0.724", 18.40mm Width) 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package 48-TSOP 48-TSOP

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