M29DW323DT70N6F TR
  • Share:

Micron Technology Inc. M29DW323DT70N6F TR

Manufacturer No:
M29DW323DT70N6F TR
Manufacturer:
Micron Technology Inc.
Package:
Tape & Reel (TR)
Description:
IC FLASH 32MBIT PARALLEL 48TSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The M29DW323DT70N6F TR is a 32 Mbit (4M x 8 or 2M x 16) non-volatile Flash memory integrated circuit produced by Micron Technology Inc. This device is part of Micron's extensive portfolio of memory and storage solutions, designed to support a wide range of applications requiring reliable and efficient data storage. The M29DW323DT70N6F TR operates on a single low voltage supply (2.7 to 3.6V) and features dual bank architecture, allowing for simultaneous read and write operations in different banks.

Micron Technology is a leading innovator in memory and storage solutions, contributing significantly to advancements in technologies such as artificial intelligence, the Internet of Things, and more.

Key Specifications

Category Description
Manufacturer Micron Technology Inc.
Memory Type Non-Volatile
Memory Format FLASH - NOR
Memory Size 32Mb (4M x 8, 2M x 16)
Memory Interface Parallel
Data Bus Width 8 bit/16 bit
Access Time 70 ns
Supply Voltage 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Package / Case 48-TSOP (12x20mm)
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)

Key Features

  • Dual Bank Architecture: The device is divided into two banks (A and B), allowing read operations in one bank while programming or erasing in the other.
  • Extended Memory Block: An extra 32 KWord (x16 mode) or 64 KByte (x8 mode) block for storing security information or additional data.
  • Block Protection: Blocks can be protected to prevent accidental program or erase commands.
  • On-chip Program/Erase Controller: Simplifies programming and erasing by managing special operations required to update memory contents.
  • Erase Suspend and Resume Modes: Allows reading and programming another block during erase suspend.
  • Unlock Bypass Program Command: Enables faster production/batch programming.
  • VPP/WP Pin for Fast Program and Write Protect: Supports fast programming and write protection.
  • Temporary Block Unprotection Mode: Allows temporary unprotection of blocks.
  • Common Flash Interface: Includes a 64-bit security code.
  • Low Power Consumption: Features standby and automatic standby modes.
  • Program/Erase Cycles: Up to 100,000 cycles per block.

Applications

The M29DW323DT70N6F TR is suitable for a variety of applications that require reliable and efficient non-volatile memory. These include:

  • Embedded systems requiring persistent data storage.
  • Industrial control systems and automation.
  • Aerospace and defense systems.
  • Automotive systems, especially those requiring data logging and configuration storage.
  • Internet of Things (IoT) devices needing secure and efficient data storage.

Q & A

  1. What is the memory size of the M29DW323DT70N6F TR?

    The memory size is 32Mb, organized as 4M x 8 or 2M x 16.

  2. What is the supply voltage range for the M29DW323DT70N6F TR?

    The supply voltage range is 2.7V to 3.6V.

  3. What is the access time of the M29DW323DT70N6F TR?

    The access time is 70 ns.

  4. Does the M29DW323DT70N6F TR support dual bank operations?

    Yes, it supports dual bank operations, allowing read operations in one bank while programming or erasing in the other.

  5. How many program/erase cycles does the M29DW323DT70N6F TR support per block?

    It supports up to 100,000 program/erase cycles per block.

  6. What is the purpose of the Extended Memory Block in the M29DW323DT70N6F TR?

    The Extended Memory Block is used for storing security information or additional data.

  7. Is the M29DW323DT70N6F TR RoHS compliant?

    Yes, it is ROHS3 compliant.

  8. What is the operating temperature range of the M29DW323DT70N6F TR?

    The operating temperature range is -40°C to 85°C.

  9. What package types are available for the M29DW323DT70N6F TR?

    It is available in 48-TSOP (12x20mm) and 48-TFBGA (6x8mm, 0.8mm pitch) packages.

  10. Does the M29DW323DT70N6F TR support erase suspend and resume modes?

    Yes, it supports erase suspend and resume modes, allowing reading and programming another block during erase suspend.

  11. What is the significance of the VPP/WP pin in the M29DW323DT70N6F TR?

    The VPP/WP pin is used for fast programming and write protection.

Product Attributes

Memory Type:Non-Volatile
Memory Format:Flash
Technology:FLASH - NOR
Memory Size:32Mb (4M x 8, 2M x 16)
Memory Interface:Parallel
Clock Frequency:- 
Write Cycle Time - Word, Page:70ns
Access Time:70 ns
Voltage - Supply:2.7V ~ 3.6V
Operating Temperature:-40°C ~ 85°C (TA)
Mounting Type:Surface Mount
Package / Case:48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package:48-TSOP
0 Remaining View Similar

In Stock

-
380

Please send RFQ , we will respond immediately.

Same Series
M29DW323DB70N6
M29DW323DB70N6
IC FLASH 32MBIT PARALLEL 48TSOP
M29DW323DB70N6E
M29DW323DB70N6E
IC FLASH 32MBIT PARALLEL 48TSOP
M29DW323DB70N6F TR
M29DW323DB70N6F TR
IC FLASH 32MBIT PARALLEL 48TSOP
M29DW323DB70ZE6E
M29DW323DB70ZE6E
IC FLASH 32MBIT PARALLEL 48TFBGA
M29DW323DT70N6F TR
M29DW323DT70N6F TR
IC FLASH 32MBIT PARALLEL 48TSOP
M29DW323DT70ZE6E
M29DW323DT70ZE6E
IC FLASH 32MBIT PARALLEL 48TFBGA
M29DW323DT70ZE6F TR
M29DW323DT70ZE6F TR
IC FLASH 32MBIT PARALLEL 48TFBGA
M29DW323DB5AN6F TR
M29DW323DB5AN6F TR
IC FLASH 256MBIT PARALLEL 48TSOP
M29DW323DB70ZE6F TR
M29DW323DB70ZE6F TR
IC FLASH 32MBIT PARALLEL 48TFBGA
M29DW323DB7AN6F TR
M29DW323DB7AN6F TR
IC FLASH 32MBIT PARALLEL 48TSOP
M29DW323DB70N3E
M29DW323DB70N3E
IC FLASH 32MBIT PARALLEL 48TSOP

Similar Products

Part Number M29DW323DT70N6F TR M29DW323DB70N6F TR
Manufacturer Micron Technology Inc. Micron Technology Inc.
Product Status Obsolete Obsolete
Memory Type Non-Volatile Non-Volatile
Memory Format Flash Flash
Technology FLASH - NOR FLASH - NOR
Memory Size 32Mb (4M x 8, 2M x 16) 32Mb (4M x 8, 2M x 16)
Memory Interface Parallel Parallel
Clock Frequency - -
Write Cycle Time - Word, Page 70ns 70ns
Access Time 70 ns 70 ns
Voltage - Supply 2.7V ~ 3.6V 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA) -40°C ~ 85°C (TA)
Mounting Type Surface Mount Surface Mount
Package / Case 48-TFSOP (0.724", 18.40mm Width) 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package 48-TSOP 48-TSOP

Related Product By Categories

MX25L6406EM2I-12G
MX25L6406EM2I-12G
Macronix
IC FLASH 64MBIT SPI 86MHZ 8SOP
MT41K512M8DA-107:P
MT41K512M8DA-107:P
Micron Technology Inc.
IC DRAM 4GBIT PARALLEL 78FBGA
M45PE80-VMP6TG
M45PE80-VMP6TG
Alliance Memory, Inc.
IC FLASH 8MBIT SPI 75MHZ 8VFQFPN
M24C02-WMN6TP
M24C02-WMN6TP
STMicroelectronics
IC EEPROM 2KBIT I2C 400KHZ 8SO
M24256-BRMN6TP
M24256-BRMN6TP
STMicroelectronics
IC EEPROM 256KBIT I2C 1MHZ 8SO
M24C02-DRMF3TG/K
M24C02-DRMF3TG/K
STMicroelectronics
IC EEPROM 2KBIT I2C 1MHZ 8MLP
CAT25010YI-GT3
CAT25010YI-GT3
onsemi
IC EEPROM 1KBIT SPI 20MHZ 8TSSOP
MT25QU256ABA1EW7-0SIT TR
MT25QU256ABA1EW7-0SIT TR
Micron Technology Inc.
IC FLASH 256MBIT SPI 8WPDFN
AT24C02AN-10SI
AT24C02AN-10SI
Microchip Technology
IC EEPROM 2KBIT I2C 400KHZ 8SOIC
M27C1001-10F1
M27C1001-10F1
STMicroelectronics
IC EPROM 1MBIT PARALLEL 32CDIP
M93C66-WMN6
M93C66-WMN6
STMicroelectronics
IC EEPROM 4KBIT SPI 2MHZ 8SO
M25P80-VMN6TPBA TR
M25P80-VMN6TPBA TR
Micron Technology Inc.
IC FLASH 8MBIT SPI 75MHZ 8SO

Related Product By Brand

MT25QU256ABA1EW9-0SIT TR
MT25QU256ABA1EW9-0SIT TR
Micron Technology Inc.
IC FLASH 256MBIT SPI 8WPDFN
MT53D512M32D2DS-053 AIT:D
MT53D512M32D2DS-053 AIT:D
Micron Technology Inc.
IC DRAM 16GBIT 1866MHZ 200WFBGA
M25P40-VMP6TG TR
M25P40-VMP6TG TR
Micron Technology Inc.
IC FLASH 4MBIT SPI 50MHZ 8VDFPN
M29W320EB70N6F TR
M29W320EB70N6F TR
Micron Technology Inc.
IC FLASH 32MBIT PARALLEL 48TSOP
M45PE40-VMP6G
M45PE40-VMP6G
Micron Technology Inc.
IC FLASH 4MBIT SPI 75MHZ 8VDFPN
M29W128GL70ZA6E
M29W128GL70ZA6E
Micron Technology Inc.
IC FLASH 128MBIT PARALLEL 64TBGA
M29W800DB45ZE6E
M29W800DB45ZE6E
Micron Technology Inc.
IC FLASH 8MBIT PARALLEL 48TFBGA
M25P40-VMN3TPB TR
M25P40-VMN3TPB TR
Micron Technology Inc.
IC FLASH 4MBIT SPI 75MHZ 8SO
M25P80-VMN3TPB TR
M25P80-VMN3TPB TR
Micron Technology Inc.
IC FLASH 8MBIT SPI 75MHZ 8SO
M25P32-VMF3TPB TR
M25P32-VMF3TPB TR
Micron Technology Inc.
IC FLASH 32MBIT SPI 75MHZ 16SO W
M25P16-VMN3YPB
M25P16-VMN3YPB
Micron Technology Inc.
IC FLASH 16MBIT SPI 75MHZ 8SO
NAND512R3A2SZA6F
NAND512R3A2SZA6F
Micron Technology Inc.
IC FLSH 512MBIT PARALLEL 63VFBGA