M25P32-VMW3GB TR
  • Share:

Micron Technology Inc. M25P32-VMW3GB TR

Manufacturer No:
M25P32-VMW3GB TR
Manufacturer:
Micron Technology Inc.
Package:
Tape & Reel (TR)
Description:
IC FLASH 32MBIT SPI 75MHZ 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The M25P32-VMW3GB TR is a 32Mb serial flash memory component produced by Micron Technology Inc. This non-volatile memory device is designed for high-speed data transfer and is compatible with the SPI (Serial Peripheral Interface) bus. It is packaged in an 8-SOIC (Small Outline Integrated Circuit) case with a tape and reel (TR) packaging option, making it suitable for surface mount applications.

This component is part of Micron's serial flash memory family, offering a robust solution for various embedded systems and applications requiring reliable and fast memory access.

Key Specifications

Product Attribute Attribute Value
Manufacturer Micron Technology Inc.
Memory Type Non-Volatile
Memory Size 32Mb (4M x 8)
Memory Interface SPI
Clock Frequency 75 MHz
Write Cycle Time - Word, Page 15ms, 5ms
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 125°C (TA)
Package / Case 8-SOIC (0.209", 5.30mm Width)
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)

Key Features

  • SPI bus-compatible serial interface for high-speed data transfer.
  • 32Mb Flash memory with a memory organization of 4M x 8.
  • Maximum clock frequency of 75 MHz.
  • Single supply voltage of 2.7V to 3.6V, with optional VPP = 9V for FAST PROGRAM/ERASE mode.
  • Page program capability up to 256 bytes in 0.64ms (typical).
  • Sector and bulk erase capabilities: sector erase in 0.6s (typical), bulk erase in 23s (typical) or 17s (typical) with VPP = 9V.
  • Hardware write protection with protected area size defined by nonvolatile bits BP0, BP1, BP2.
  • Deep power-down mode with a current of 1µA (typical).
  • Electronic signature with JEDEC-standard 2-byte signature (2016h) and unique ID code (UID).
  • More than 100,000 write cycles per sector and more than 20 years of data retention.
  • Automotive-grade parts available.

Applications

The M25P32-VMW3GB TR is suitable for a wide range of applications requiring high-speed and reliable non-volatile memory. These include:

  • Embedded systems in industrial, automotive, and consumer electronics.
  • IoT devices that require secure and efficient data storage.
  • Automotive systems, such as infotainment, navigation, and control units.
  • Industrial control systems and automation equipment.
  • Medical devices and healthcare equipment.

Q & A

  1. What is the memory size of the M25P32-VMW3GB TR?

    The memory size is 32Mb, organized as 4M x 8 bits.

  2. What is the clock frequency of the M25P32-VMW3GB TR?

    The maximum clock frequency is 75 MHz.

  3. What is the supply voltage range for the M25P32-VMW3GB TR?

    The supply voltage range is 2.7V to 3.6V.

  4. What is the operating temperature range for the M25P32-VMW3GB TR?

    The operating temperature range is -40°C to 125°C.

  5. What type of memory interface does the M25P32-VMW3GB TR use?

    The memory interface is SPI (Serial Peripheral Interface).

  6. Is the M25P32-VMW3GB TR RoHS compliant?

    Yes, the M25P32-VMW3GB TR is ROHS3 compliant.

  7. What is the write cycle time for the M25P32-VMW3GB TR?

    The write cycle time is 15ms for a word and 5ms for a page.

  8. Does the M25P32-VMW3GB TR have hardware write protection?

    Yes, it has hardware write protection with the protected area size defined by nonvolatile bits BP0, BP1, BP2.

  9. What is the typical deep power-down current of the M25P32-VMW3GB TR?

    The typical deep power-down current is 1µA.

  10. How many write cycles can the M25P32-VMW3GB TR endure per sector?

    The device can endure more than 100,000 write cycles per sector.

Product Attributes

Memory Type:Non-Volatile
Memory Format:Flash
Technology:FLASH - NOR
Memory Size:32Mb (4M x 8)
Memory Interface:SPI
Clock Frequency:75 MHz
Write Cycle Time - Word, Page:15ms, 5ms
Access Time:- 
Voltage - Supply:2.7V ~ 3.6V
Operating Temperature:-40°C ~ 125°C (TA)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.209", 5.30mm Width)
Supplier Device Package:8-SO
0 Remaining View Similar

In Stock

-
490

Please send RFQ , we will respond immediately.

Same Series
M25P32-VMW3GB TR
M25P32-VMW3GB TR
IC FLASH 32MBIT SPI 75MHZ 8SO

Similar Products

Part Number M25P32-VMW3GB TR M25P32-VMW3TGB TR
Manufacturer Micron Technology Inc. Micron Technology Inc.
Product Status Obsolete Obsolete
Memory Type Non-Volatile Non-Volatile
Memory Format Flash Flash
Technology FLASH - NOR FLASH - NOR
Memory Size 32Mb (4M x 8) 32Mb (4M x 8)
Memory Interface SPI SPI
Clock Frequency 75 MHz 75 MHz
Write Cycle Time - Word, Page 15ms, 5ms 15ms, 5ms
Access Time - -
Voltage - Supply 2.7V ~ 3.6V 2.7V ~ 3.6V
Operating Temperature -40°C ~ 125°C (TA) -40°C ~ 125°C (TA)
Mounting Type Surface Mount Surface Mount
Package / Case 8-SOIC (0.209", 5.30mm Width) 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package 8-SO 8-SO W

Related Product By Categories

M24C02-FMH6TG
M24C02-FMH6TG
STMicroelectronics
IC EEPROM 2KBIT I2C 5UFDFPN
M24M01-RMN6P
M24M01-RMN6P
STMicroelectronics
IC EEPROM 1MBIT I2C 1MHZ 8SO
CAT24C16WI-GT3
CAT24C16WI-GT3
onsemi
IC EEPROM 16KBIT I2C 8SOIC
GD25Q32CSIGR
GD25Q32CSIGR
GigaDevice Semiconductor (HK) Limited
IC FLASH 32MBIT SPI/QUAD 8SOP
MX25L12835FM2I-10G
MX25L12835FM2I-10G
Macronix
IC FLASH 128MBIT SPI 104MHZ 8SOP
M24512-RMN6P
M24512-RMN6P
STMicroelectronics
IC EEPROM 512KBIT I2C 1MHZ 8SO
MT40A1G8SA-075:E
MT40A1G8SA-075:E
Micron Technology Inc.
IC DRAM 8GBIT PARALLEL 78FBGA
W25Q128JVEIQ TR
W25Q128JVEIQ TR
Winbond Electronics
IC FLASH 128MBIT SPI/QUAD 8WSON
CAT25128VI-G
CAT25128VI-G
onsemi
CAT25128 - 128-KBIT SPI SERIAL E
M29W160EB70N6E
M29W160EB70N6E
Micron Technology Inc.
IC FLASH 16MBIT PARALLEL 48TSOP
M28W160FSB70ZA6E
M28W160FSB70ZA6E
Micron Technology Inc.
IC FLASH 16MBIT PARALLEL 64TBGA
M29W128GL70ZS3E
M29W128GL70ZS3E
Micron Technology Inc.
IC FLASH 128MBIT PARALLEL 64FBGA

Related Product By Brand

MT41K512M8DA-107:P
MT41K512M8DA-107:P
Micron Technology Inc.
IC DRAM 4GBIT PARALLEL 78FBGA
MT25QL512ABB8E12-0AAT
MT25QL512ABB8E12-0AAT
Micron Technology Inc.
IC FLASH 512MBIT SPI 24TPBGA
MT53D512M32D2DS-053 AIT:D
MT53D512M32D2DS-053 AIT:D
Micron Technology Inc.
IC DRAM 16GBIT 1866MHZ 200WFBGA
MT41K128M16JT-125 AAT:K TR
MT41K128M16JT-125 AAT:K TR
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 96FBGA
MT25QL512ABB8ESF-0SIT
MT25QL512ABB8ESF-0SIT
Micron Technology Inc.
IC FLASH 512MBIT SPI 133MHZ 16SO
M29W320DB70N6
M29W320DB70N6
Micron Technology Inc.
IC FLASH 32MBIT PARALLEL 48TSOP
M29F010B45K6E
M29F010B45K6E
Micron Technology Inc.
IC FLASH 1MBIT PARALLEL 32PLCC
M25P40-VMN3TPB TR
M25P40-VMN3TPB TR
Micron Technology Inc.
IC FLASH 4MBIT SPI 75MHZ 8SO
M25P80-VMN6PBA
M25P80-VMN6PBA
Micron Technology Inc.
IC FLASH 8MBIT SPI 75MHZ 8SO
M25P64-VMF6PBA
M25P64-VMF6PBA
Micron Technology Inc.
IC FLASH 64MBIT SPI 75MHZ 16SO W
MTFC32GAPALBH-AIT ES
MTFC32GAPALBH-AIT ES
Micron Technology Inc.
IC FLASH 256GBIT MMC 153TFBGA
MTFC4GACAJCN-4M IT TR
MTFC4GACAJCN-4M IT TR
Micron Technology Inc.
IC FLASH 32GBIT MMC 153VFBGA