UPS5817E3/TR13
  • Share:

Microchip Technology UPS5817E3/TR13

Manufacturer No:
UPS5817E3/TR13
Manufacturer:
Microchip Technology
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 20V 1A POWERMITE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The UPS5817E3/TR13 is a single Schottky barrier rectifier produced by Microchip Technology Inc. This component is assembled in the Powermite 1 package, which features a full metallic bottom to prevent solder flux entrapment during assembly. The package also includes a unique locking tab that serves as an efficient heat path for external heat sinking, ensuring low thermal resistance from the junction to the case. This product is designed for use in various power management applications, including switching and regulating power supplies, as well as charge pump circuits.

Key Specifications

ParameterSymbolValueUnit
Peak Repetitive Reverse Voltage and Working Peak Reverse VoltageVRRM / VRWM20V
RMS Reverse VoltageVR(RMS)14V
Junction and Storage TemperatureTJ and TSTG-55 to +150ºC
Thermal Resistance Junction-to-CaseRӨJC15ºC/W
Thermal Resistance Junction-to-AmbientRӨJA240ºC/W
Average Rectified Output Current @ TC = 135 ºCIO1.0A
Repetitive Peak Forward CurrentIFRM2.0A
Surge Peak Forward CurrentIFSM50A
Voltage Rate of Change @ Rated VR and TJ = 25 ºCdv/dt10,000V/µs
Solder Temperature @ 10 sTSP260ºC

Key Features

  • Ultra-low forward voltage drop.
  • Efficient heat path with integral locking bottom metal tab for external heat sinking.
  • Supplied in 8mm tape and reel for automated assembly.
  • RoHS compliant.
  • High power surface mount package.
  • Guard ring construction for transient protection.
  • Compatible with automatic insertion equipment.
  • Full-metallic bottom eliminates flux entrapment.
  • High surge capacity.
  • Ideal for OR’ing diode applications.

Applications

The UPS5817E3/TR13 is suitable for a variety of applications, including:

  • Switching and regulating power supplies.
  • Charge pump circuits.
  • High power surface mount applications requiring efficient heat dissipation.
  • OR’ing diode configurations.
  • Automated assembly lines due to its compatibility with automatic insertion equipment.

Q & A

  1. What is the peak repetitive reverse voltage of the UPS5817E3/TR13?
    The peak repetitive reverse voltage (VRRM) is 20 V.
  2. What is the average rectified output current of the UPS5817E3/TR13 at TC = 135 ºC?
    The average rectified output current (IO) is 1.0 A.
  3. Is the UPS5817E3/TR13 RoHS compliant?
    Yes, the UPS5817E3/TR13 is RoHS compliant.
  4. What is the thermal resistance junction-to-case (RӨJC) of the UPS5817E3/TR13?
    The thermal resistance junction-to-case (RӨJC) is 15 ºC/W.
  5. What is the surge peak forward current (IFSM) of the UPS5817E3/TR13?
    The surge peak forward current (IFSM) is 50 A.
  6. What is the voltage rate of change (dv/dt) at rated VR and TJ = 25 ºC for the UPS5817E3/TR13?
    The voltage rate of change (dv/dt) is 10,000 V/µs.
  7. What is the solder temperature @ 10 s for the UPS5817E3/TR13?
    The solder temperature @ 10 s is 260 ºC.
  8. What package type is the UPS5817E3/TR13 assembled in?
    The UPS5817E3/TR13 is assembled in the Powermite 1 package (DO-216AA).
  9. What are the key benefits of the full-metallic bottom in the Powermite 1 package?
    The full-metallic bottom eliminates the possibility of solder flux entrapment and provides an efficient heat path for external heat sinking.
  10. What are some common applications for the UPS5817E3/TR13?
    Common applications include switching and regulating power supplies, charge pump circuits, and high power surface mount applications.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):20 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:450 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:1 mA @ 20 V
Capacitance @ Vr, F:105pF @ 5V, 1MHz
Mounting Type:Surface Mount
Package / Case:DO-216AA
Supplier Device Package:Powermite
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.49
1,549

Please send RFQ , we will respond immediately.

Same Series
UPS5819E3/TR13
UPS5819E3/TR13
DIODE SCHOTTKY 40V 1A POWERMITE1
UPS5817E3/TR13
UPS5817E3/TR13
DIODE SCHOTTKY 20V 1A POWERMITE

Similar Products

Part Number UPS5817E3/TR13 UPS5819E3/TR13
Manufacturer Microchip Technology Microchip Technology
Product Status Active Active
Diode Type Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 20 V 40 V
Current - Average Rectified (Io) 1A 1A
Voltage - Forward (Vf) (Max) @ If 450 mV @ 1 A 550 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 1 mA @ 20 V 1 mA @ 20 V
Capacitance @ Vr, F 105pF @ 5V, 1MHz 60pF @ 5V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case DO-216AA DO-216AA
Supplier Device Package Powermite Powermite 1 (DO216-AA)
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

BAT54WS_R1_00001
BAT54WS_R1_00001
Panjit International Inc.
SOD-323, SKY
BAT54TS-AU_R1_000A1
BAT54TS-AU_R1_000A1
Panjit International Inc.
SOD-523, SKY
BAS316-TP
BAS316-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD323
BAT54-TP
BAT54-TP
Micro Commercial Co
DIODE SCHOTTKY 30V 200MA SOT23
PMEG2010ER,115
PMEG2010ER,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A CFP3
RB751CS40,315
RB751CS40,315
Nexperia USA Inc.
DIODE SCHOTTKY 40V 120MA SOD882
BAS21E6433HTMA1
BAS21E6433HTMA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOT23
NSVBAS16W1T1G
NSVBAS16W1T1G
onsemi
SS SC88 SWITCHING DIODE
BAS21_D87Z
BAS21_D87Z
onsemi
DIODE GEN PURP 250V 200MA SOT23
1N4004GP-M3/54
1N4004GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
FSV530AF
FSV530AF
onsemi
DIODE SCHOTTKY 30V 5A SMAF
BAT54T-HF
BAT54T-HF
Comchip Technology
DIODE SCHOTTKY 30V 0.2A SOT-23

Related Product By Brand

1N4733P/TR12
1N4733P/TR12
Microchip Technology
DIODE ZENER 5.1V 1W DO204AL
2N5416S
2N5416S
Microchip Technology
TRANS PNP 300V 50UA TO39
2N5416UA
2N5416UA
Microchip Technology
NPN TRANSISTOR
ATMEGA16U2-MU
ATMEGA16U2-MU
Microchip Technology
IC MCU 8BIT 16KB FLASH 32VQFN
ATSAMD21G18A-AUT
ATSAMD21G18A-AUT
Microchip Technology
IC MCU 32BIT 256KB FLASH 48TQFP
ATMEGA128A-AUR
ATMEGA128A-AUR
Microchip Technology
IC MCU 8BIT 128KB FLASH 64TQFP
ATMEGA16A-PU
ATMEGA16A-PU
Microchip Technology
IC MCU 8BIT 16KB FLASH 40DIP
AT91SAM9260B-CU-999
AT91SAM9260B-CU-999
Microchip Technology
IC MCU 32BIT 32KB ROM 217BGA
24LC32AT-I/SN
24LC32AT-I/SN
Microchip Technology
IC EEPROM 32KBIT I2C 8SOIC
AT24C02D-PUM
AT24C02D-PUM
Microchip Technology
IC EEPROM 2KBIT I2C 1MHZ 8DIP
MIC5504-3.3YM5-TR
MIC5504-3.3YM5-TR
Microchip Technology
IC REG LINEAR 3.3V 300MA SOT23-5
MCP9700AT-E/TT
MCP9700AT-E/TT
Microchip Technology
SENSOR ANALOG -40C-125C SOT23-3