Overview
The 1N5821US is a Schottky Barrier Rectifier diode produced by Microchip Technology. This component is part of the 1N5820 series and is known for its high efficiency and low forward voltage drop. It is designed to handle high current and voltage requirements, making it suitable for various power management and rectification applications. The diode is available in a DO-201AD package and is hermetically sealed, ensuring reliability and durability in harsh environments.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Maximum Repetitive Peak Reverse Voltage (VRRM) | 30 | V |
| Maximum RMS Voltage (VRMS) | 21 | V |
| Maximum DC Blocking Voltage (VDC) | 30 | V |
| Non-Repetitive Peak Reverse Voltage (VRSM) | 36 | V |
| Maximum Average Forward Rectified Current (IF(AV)) | 3.0 | A |
| Peak Forward Surge Current (IFSM) | 80 | A |
| Maximum Instantaneous Forward Voltage (VF) | 0.500 | V |
| Operating Junction Temperature Range | -65 to +125 | °C |
| Storage Temperature Range | -65 to +125 | °C |
| Diode Configuration | Single | |
| Diode Case Style | DO-201AD | |
| No. of Pins | 2 | |
| Termination Type | Axial Leaded |
Key Features
- Low forward voltage drop, typically 0.500 V, reducing power losses and increasing efficiency.
- High current handling capability with a maximum average forward rectified current of 3.0 A.
- High peak forward surge current of 80 A, suitable for applications with transient current spikes.
- Wide operating temperature range from -65°C to +125°C, making it suitable for harsh environments.
- Hermetically sealed in a DO-201AD package, ensuring reliability and durability.
- Low reverse leakage current, typically 2.0 mA at 25°C.
Applications
The 1N5821US Schottky Barrier Rectifier is versatile and can be used in a variety of applications, including:
- Power supplies and DC-DC converters.
- Rectification and voltage regulation circuits.
- Switch-mode power supplies (SMPS).
- Automotive and industrial power systems.
- High-frequency switching applications.
Q & A
- What is the maximum repetitive peak reverse voltage of the 1N5821US diode?
The maximum repetitive peak reverse voltage (VRRM) is 30 V. - What is the maximum average forward rectified current of the 1N5821US diode?
The maximum average forward rectified current (IF(AV)) is 3.0 A. - What is the typical forward voltage drop of the 1N5821US diode?
The typical forward voltage drop (VF) is 0.500 V. - What is the operating temperature range of the 1N5821US diode?
The operating temperature range is from -65°C to +125°C. - What is the peak forward surge current of the 1N5821US diode?
The peak forward surge current (IFSM) is 80 A. - What type of package does the 1N5821US diode come in?
The diode comes in a DO-201AD package. - Is the 1N5821US diode hermetically sealed?
Yes, the 1N5821US diode is hermetically sealed. - What are some common applications of the 1N5821US diode?
Common applications include power supplies, DC-DC converters, rectification circuits, switch-mode power supplies, and automotive and industrial power systems. - What is the storage temperature range for the 1N5821US diode?
The storage temperature range is from -65°C to +125°C. - What is the termination type of the 1N5821US diode?
The termination type is axial leaded.
