Overview
The 1N4148UBCD/TR is a high-performance switching/signal diode produced by Microchip Technology. This diode is designed for military-grade applications, adhering to the MIL-PRF-19500/116 standards. It features a ceramic bodied construction, which enhances its reliability and durability. The 1N4148UBCD/TR is known for its fast switching capabilities and low capacitance, making it suitable for a wide range of electronic circuits.
Key Specifications
| Parameter | Test Condition | Symbol | Value | Unit |
|---|---|---|---|---|
| Repetitive Peak Reverse Voltage | Tamb = 25 °C | VRRM | 100 | V |
| Reverse Voltage | Tamb = 25 °C | VR | 75 | V |
| Peak Forward Surge Current | tp = 1 μs | IFSM | 2 | A |
| Repetitive Peak Forward Current | Tamb = 25 °C | IFRM | 500 | mA |
| Forward Continuous Current | Tamb = 25 °C | IF | 300 | mA |
| Average Forward Current | VR = 0, Tamb = 25 °C | IF(AV) | 150 | mA |
| Power Dissipation | l = 4 mm, TL = 45 °C | Ptot | 440 | mW |
| Thermal Resistance Junction to Ambient Air | l = 4 mm, TL = constant | RthJA | 350 | K/W |
| Junction Temperature | Tamb = 25 °C | Tj | 175 | °C |
| Storage Temperature Range | Tstg | -65 to +150 | °C | |
| Forward Voltage | IF = 10 mA | VF | 1 | V |
| Reverse Current | VR = 20 V | IR | 25 nA | |
| Reverse Recovery Time | IF = IR = 10 mA, iR = 1 mA | trr | 8 ns | |
| Diode Capacitance | VR = 0 V, f = 1 MHz, VHF = 50 mV | CD | 4 pF |
Key Features
- Silicon Epitaxial Planar Diode: The 1N4148UBCD/TR is built using silicon epitaxial planar technology, ensuring high reliability and performance.
- Fast Switching Capabilities: This diode is designed for fast switching applications, with a reverse recovery time as low as 8 ns.
- Low Capacitance: It features a low diode capacitance of 4 pF, making it suitable for high-frequency applications.
- Military Grade Construction: The diode is constructed with ceramic bodies, adhering to MIL-PRF-19500/116 standards for military-grade reliability.
- Hermetically Sealed: The diode is hermetically sealed, providing protection against environmental factors.
Applications
- Extreme Fast Switches: The 1N4148UBCD/TR is ideal for applications requiring fast switching times, such as in high-speed digital circuits.
- Signal Processing: Its low capacitance and fast recovery time make it suitable for signal processing and high-frequency signal applications.
- Military and Aerospace: Given its military-grade construction, it is widely used in military and aerospace electronics where reliability and durability are critical.
- General Electronics: It can be used in various general electronic circuits requiring a reliable and fast-switching diode.
Q & A
- What is the repetitive peak reverse voltage of the 1N4148UBCD/TR diode?
The repetitive peak reverse voltage is 100 V.
- What is the forward continuous current rating of the 1N4148UBCD/TR?
The forward continuous current rating is 300 mA.
- What is the typical forward voltage of the 1N4148UBCD/TR at 10 mA?
The typical forward voltage is 1 V at 10 mA.
- What is the reverse recovery time of the 1N4148UBCD/TR?
The reverse recovery time is typically 8 ns.
- What is the diode capacitance of the 1N4148UBCD/TR?
The diode capacitance is 4 pF at VR = 0 V and f = 1 MHz.
- What are the storage temperature limits for the 1N4148UBCD/TR?
The storage temperature range is -65 °C to +150 °C.
- Is the 1N4148UBCD/TR suitable for high-frequency applications?
Yes, it is suitable due to its low capacitance and fast switching capabilities.
- What is the junction temperature limit for the 1N4148UBCD/TR?
The junction temperature limit is 175 °C.
- What type of construction does the 1N4148UBCD/TR have?
The diode has a ceramic bodied construction, hermetically sealed for military-grade reliability.
- What are some common applications of the 1N4148UBCD/TR?
Common applications include extreme fast switches, signal processing, military and aerospace electronics, and general electronic circuits.
