Overview
The 1N4148-1E3 is a popular JEDEC registered switching/signal diode produced by Microchip Technology. This diode is RoHS compliant and features internal metallurgical bonded construction. It is also available in non-RoHS compliant form for military-grade products per MIL-PRF-19500/116. The 1N4148-1E3 is hermetically sealed and bonded into a double-plug DO-35 package, making it suitable for high-speed applications.
Key Specifications
| Parameter | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Forward Voltage | V_F | - | 0.8 | 1 | V |
| Junction Capacitance | C_J | - | - | 4 | pF |
| Reverse Breakdown Voltage | V_BR | - | - | 100 | V |
| Reverse Current | I_R | - | - | 0.02 | µA |
| Reverse Recovery Time | t_rr | - | - | 5 | ns |
| Forward Surge Peak Current | I_FSM | - | - | 2 | A |
| Junction Temperature | T_J | -65 | - | 175 | °C |
| Output Current | I_OUT | - | - | 0.2 | A |
| Thermal Resistance, Junction to Ambient | R_θJA | - | - | 325 | °C/W |
| Thermal Resistance, Junction to Lead | R_θJL | - | - | 250 | °C/W |
Key Features
- Silicon epitaxial planar diode
- Fast switching speeds with a reverse recovery time of 5 ns
- Low capacitance of 4 pF
- Hermetically sealed in a double-plug DO-35 package
- RoHS compliant, with non-RoHS compliant versions available for military-grade applications
- High reliability and stability in high-speed applications
Applications
- High-speed switching applications
- Detectors and transient OR'ing circuits
- Logic arrays and blocking diodes
- Low-capacitance steering diodes
- General-purpose signal and switching applications
Q & A
- What is the 1N4148-1E3 diode used for?
The 1N4148-1E3 is used in various high-speed applications including switchers, detectors, transient OR'ing, logic arrays, and low-capacitance steering diodes.
- What is the package type of the 1N4148-1E3 diode?
The 1N4148-1E3 is hermetically sealed in a double-plug DO-35 package.
- Is the 1N4148-1E3 diode RoHS compliant?
- What is the forward voltage of the 1N4148-1E3 diode?
The forward voltage (V_F) of the 1N4148-1E3 diode is typically 0.8 V.
- What is the reverse recovery time of the 1N4148-1E3 diode?
The reverse recovery time (t_rr) of the 1N4148-1E3 diode is 5 ns.
- What is the maximum junction temperature of the 1N4148-1E3 diode?
The maximum junction temperature (T_J) of the 1N4148-1E3 diode is 175°C.
- What is the thermal resistance, junction to ambient, of the 1N4148-1E3 diode?
The thermal resistance, junction to ambient (R_θJA), of the 1N4148-1E3 diode is 325°C/W.
- What is the peak forward surge current of the 1N4148-1E3 diode?
The peak forward surge current (I_FSM) of the 1N4148-1E3 diode is 2 A.
- What is the junction capacitance of the 1N4148-1E3 diode?
The junction capacitance (C_J) of the 1N4148-1E3 diode is 4 pF.
- What are the typical applications of the 1N4148-1E3 diode?
The 1N4148-1E3 diode is typically used in high-speed switching applications, detectors, transient OR'ing circuits, logic arrays, and low-capacitance steering diodes.
- Where can I find the datasheet for the 1N4148-1E3 diode?
The datasheet for the 1N4148-1E3 diode can be found on the Microchip Technology website or through authorized distributors like Digi-Key and Mouser.
