MB85RC128PNF-G-JNE1
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Kaga FEI America, Inc. MB85RC128PNF-G-JNE1

Manufacturer No:
MB85RC128PNF-G-JNE1
Manufacturer:
Kaga FEI America, Inc.
Package:
Tube
Description:
IC FRAM 128KBIT I2C 400KHZ 8SOP
Delivery:
Payment:
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Product Introduction

Overview

The MB85RC128PNF-G-JNE1 is a Ferroelectric Random Access Memory (FRAM) chip produced by Kaga FEI America, Inc., a company that is part of the KAGA Electronics Co., Ltd. conglomerate. This memory device utilizes ferroelectric process and silicon gate CMOS technologies to form nonvolatile memory cells. Unlike traditional SRAM, the MB85RC128 does not require a data backup battery to retain data. It offers high read/write endurance and low power consumption, making it suitable for a variety of applications where data integrity and power efficiency are crucial.

Key Specifications

Parameter Value Unit Min Typ Max
Memory Size 128 Kbit
Memory Organization 16,384 words × 8 bits
Interface Two-wire serial (I2C)
Operating Frequency kHz 400
Read/Write Endurance cycles/byte 10^12
Data Retention years 10 (+85°C), 95 (+55°C), >200 (+35°C)
Operating Power Supply Voltage VDD V 2.7 3.3 3.6
Operating Power Supply Current IDD μA 30 (at 100 kHz), 100 (at 400 kHz)
Standby Current μA 5
Operating Ambient Temperature TA °C -40 +85
Package 8-pin plastic SOP (FPT-8P-M02)

Key Features

  • Nonvolatile Memory: Retains data without the need for a backup battery.
  • High Read/Write Endurance: Up to 10^12 cycles per byte, significantly outperforming Flash memory and E2PROM.
  • Two-Wire Serial Interface (I2C): Fully controllable by serial clock (SCL) and serial data (SDA) ports.
  • Low Power Consumption: Operating power supply current of 100 μA (typical at 400 kHz) and standby current of 5 μA (typical).
  • Wide Operating Temperature Range: From -40°C to +85°C.
  • Write Protection: The Write Protect pin (WP) allows for disabling the writing operation when set to the high level.
  • RoHS Compliant: Meets the regulations of REACH, EU RoHS Directive, and China RoHS.

Applications

  • Industrial Automation: Suitable for applications requiring high data integrity and low power consumption.
  • IoT Devices: Ideal for Internet of Things devices that need reliable and efficient memory solutions.
  • Medical Devices: Used in medical devices where data retention and low power are critical.
  • Aerospace and Defense: Applicable in environments requiring high reliability and endurance.
  • Consumer Electronics: Can be used in various consumer electronics where nonvolatile memory is necessary.

Q & A

  1. What is the memory configuration of the MB85RC128?

    The MB85RC128 has a memory configuration of 16,384 words × 8 bits.

  2. What is the operating frequency of the MB85RC128?

    The operating frequency is up to 400 kHz.

  3. How many read/write cycles can the MB85RC128 endure?

    The MB85RC128 can endure up to 10^12 read/write cycles per byte.

  4. What is the data retention period of the MB85RC128?

    The data retention period is 10 years at +85°C, 95 years at +55°C, and over 200 years at +35°C.

  5. What is the operating power supply voltage range of the MB85RC128?

    The operating power supply voltage range is from 2.7 V to 3.6 V.

  6. What is the typical standby current of the MB85RC128?

    The typical standby current is 5 μA.

  7. What is the operating ambient temperature range of the MB85RC128?

    The operating ambient temperature range is from -40°C to +85°C.

  8. Is the MB85RC128 RoHS compliant?
  9. How many devices can be connected to the same data bus?
  10. What is the function of the Write Protect pin (WP)?

    The Write Protect pin (WP) disables the writing operation when set to the high level.

Product Attributes

Memory Type:Non-Volatile
Memory Format:FRAM
Technology:FRAM (Ferroelectric RAM)
Memory Size:128Kb (16K x 8)
Memory Interface:I²C
Clock Frequency:400 kHz
Write Cycle Time - Word, Page:- 
Access Time:900 ns
Voltage - Supply:2.7V ~ 3.6V
Operating Temperature:-40°C ~ 85°C (TA)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOP
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Similar Products

Part Number MB85RC128PNF-G-JNE1 MB85RC128APNF-G-JNE1
Manufacturer Kaga FEI America, Inc. Kaga FEI America, Inc.
Product Status Obsolete Active
Memory Type Non-Volatile Non-Volatile
Memory Format FRAM FRAM
Technology FRAM (Ferroelectric RAM) FRAM (Ferroelectric RAM)
Memory Size 128Kb (16K x 8) 128Kb (16K x 8)
Memory Interface I²C I²C
Clock Frequency 400 kHz 1 MHz
Write Cycle Time - Word, Page - -
Access Time 900 ns 900 ns
Voltage - Supply 2.7V ~ 3.6V 3V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA) -40°C ~ 85°C (TA)
Mounting Type Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOP 8-SOP

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