Overview
The BAS40-13-F is a 200mA surface-mount Schottky Barrier Diode manufactured by Diodes Incorporated. It is packaged in the SOT23 (Standard) package and is designed to offer low forward voltage drop and fast switching capability. This diode is equipped with a PN Junction Guard Ring for transient and ESD protection, ensuring robust performance in various applications. The BAS40-13-F is totally lead-free and fully RoHS compliant, making it an environmentally friendly choice. It is also classified as a 'Green' device, adhering to strict environmental standards.
Key Specifications
Characteristic | Symbol | Value | Unit | Test Condition |
---|---|---|---|---|
Peak Repetitive Reverse Voltage | VRRM | 40 | V | - |
Forward Continuous Current | IFM | 200 | mA | - |
Forward Surge Current | IFSM | 600 | mA | t < 1.0s |
Forward Voltage Drop | VF | 0.38 - 1.0 | V | IF = 1.0mA to 40mA |
Reverse Leakage Current | IR | 0.2 - 200 | nA | VR = 30V |
Total Capacitance | CT | 4.0 - 5.0 | pF | VR = 0V, f = 1.0MHz |
Reverse Recovery Time | trr | 5.0 | ns | IF = IR = 10mA to IR = 1.0mA, RL = 100Ω |
Power Dissipation | PD | 350 | mW | - |
Thermal Resistance, Junction to Ambient Air | RθJA | 357 | °C/W | - |
Operating Temperature Range | TJ | -55 to +125 | °C | - |
Storage Temperature Range | TSTG | -65 to +150 | °C | - |
Key Features
- Low Forward Voltage Drop: The BAS40-13-F offers a low forward voltage drop, which is crucial for efficient power management in electronic circuits.
- Fast Switching: This diode is designed for fast switching applications, making it suitable for high-frequency operations.
- PN Junction Guard Ring for Transient and ESD Protection: The diode includes a PN Junction Guard Ring to protect against transient and ESD events, enhancing its reliability.
- Totally Lead-Free and RoHS Compliant: The BAS40-13-F is free from lead and fully compliant with RoHS standards, ensuring environmental sustainability.
- Halogen and Antimony Free 'Green' Device: It is classified as a 'Green' device, containing less than 900ppm bromine and chlorine, and is halogen and antimony free.
- AEC-Q101 Qualified: The diode is qualified to AEC-Q101 standards, indicating its suitability for high-reliability automotive applications.
Applications
- Automotive Systems: Given its AEC-Q101 qualification, the BAS40-13-F is well-suited for use in automotive systems where high reliability is critical.
- Power Management: Its low forward voltage drop and fast switching capabilities make it ideal for power management circuits in various electronic devices.
- High-Frequency Circuits: The diode's fast switching and low capacitance characteristics make it suitable for high-frequency applications.
- General Electronics: It can be used in a wide range of general electronic circuits requiring efficient and reliable diode performance.
Q & A
- What is the peak repetitive reverse voltage of the BAS40-13-F?
The peak repetitive reverse voltage (VRRM) of the BAS40-13-F is 40V.
- What is the forward continuous current rating of the BAS40-13-F?
The forward continuous current (IFM) rating is 200mA.
- What is the maximum forward surge current of the BAS40-13-F?
The maximum forward surge current (IFSM) is 600mA for t < 1.0s.
- What is the typical forward voltage drop of the BAS40-13-F?
The typical forward voltage drop (VF) is 0.38V at IF = 1.0mA and up to 1.0V at IF = 40mA.
- Is the BAS40-13-F RoHS compliant?
Yes, the BAS40-13-F is totally lead-free and fully RoHS compliant.
- What is the operating temperature range of the BAS40-13-F?
The operating temperature range (TJ) is -55°C to +125°C.
- What is the storage temperature range of the BAS40-13-F?
The storage temperature range (TSTG) is -65°C to +150°C.
- Is the BAS40-13-F qualified to AEC-Q101 standards?
Yes, the BAS40-13-F is qualified to AEC-Q101 standards for high reliability in automotive applications.
- What is the thermal resistance, junction to ambient air, of the BAS40-13-F?
The thermal resistance, junction to ambient air (RθJA), is 357°C/W.
- What is the typical total capacitance of the BAS40-13-F?
The typical total capacitance (CT) is 4.0 to 5.0 pF at VR = 0V and f = 1.0MHz.