Overview
The HMC8412LP2FETR, produced by Analog Devices Inc., is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high electron mobility transistor (pHEMT) low noise wideband amplifier. This device operates over a broad frequency range of 0.4 GHz to 11 GHz, making it highly versatile for various microwave applications. It features a single positive supply voltage, is self-biased, and requires only 60 mA from a 5 V drain supply voltage. The amplifier is housed in a RoHS-compliant, 2 mm × 2 mm, 6-lead LFCSP package, which is ideal for surface-mount technology (SMT)-based high-capacity microwave radio applications.
Key Specifications
| Parameter | Min | Typical | Max | Unit | Test Conditions/Comments |
|---|---|---|---|---|---|
| Frequency Range | 0.4 | - | 11 | GHz | - |
| Gain | 13 | 15.5 | - | dB | VDD = 5 V, IDQ = 60 mA, RBIAS = 1.47 kΩ, TA = 25°C |
| Noise Figure | - | 1.4 | - | dB | VDD = 5 V, IDQ = 60 mA, RBIAS = 1.47 kΩ, TA = 25°C |
| Return Loss (Input) | - | 14 | - | dB | VDD = 5 V, IDQ = 60 mA, RBIAS = 1.47 kΩ, TA = 25°C |
| Return Loss (Output) | - | 13 | - | dB | VDD = 5 V, IDQ = 60 mA, RBIAS = 1.47 kΩ, TA = 25°C |
| Output Power for 1 dB Compression (OP1dB) | 15 | 18 | - | dBm | VDD = 5 V, IDQ = 60 mA, RBIAS = 1.47 kΩ, TA = 25°C |
| Saturated Output Power (PSAT) | - | 20.5 | - | dBm | VDD = 5 V, IDQ = 60 mA, RBIAS = 1.47 kΩ, TA = 25°C |
| Output Third-Order Intercept (OIP3) | - | 33 | - | dBm | VDD = 5 V, IDQ = 60 mA, RBIAS = 1.47 kΩ, TA = 25°C |
| Supply Voltage (VDD) | - | 5 | 7 | V | - |
| Supply Current (IDQ) | - | 60 | - | mA | VDD = 5 V, TA = 25°C |
Key Features
- Low Noise Figure: Typical noise figure of 1.4 dB, ensuring minimal signal degradation.
- Single Positive Supply: Self-biased operation from a single 5 V supply voltage.
- High Gain: Typical gain of 15.5 dB, providing significant signal amplification.
- High OIP3: Typical output third-order intercept of 33 dBm, indicating high linearity.
- Internally Matched Inputs and Outputs: Matched to 50 Ω, simplifying integration into microwave circuits.
- Compact Package: RoHS-compliant, 2 mm × 2 mm, 6-lead LFCSP package suitable for SMT applications.
Applications
- Test Instrumentation: Ideal for use in various test and measurement equipment due to its wideband operation and low noise characteristics.
- Telecommunications: Suitable for telecommunications systems requiring high gain and low noise amplification.
- Military Radar and Communication: Used in military applications due to its high performance and reliability.
- Electronic Warfare: Employed in electronic warfare systems for its ability to handle a wide range of frequencies.
- Aerospace: Utilized in aerospace applications where high reliability and performance are critical.
Q & A
- What is the frequency range of the HMC8412LP2FETR?
The HMC8412LP2FETR operates over a frequency range of 0.4 GHz to 11 GHz.
- What is the typical noise figure of the HMC8412LP2FETR?
The typical noise figure is 1.4 dB.
- What is the typical gain of the HMC8412LP2FETR?
The typical gain is 15.5 dB.
- What is the supply voltage and current requirement for the HMC8412LP2FETR?
The device operates from a 5 V supply voltage and requires 60 mA of supply current.
- What is the saturated output power (PSAT) of the HMC8412LP2FETR?
The saturated output power (PSAT) is typically 20.5 dBm.
- What is the output third-order intercept (OIP3) of the HMC8412LP2FETR?
The output third-order intercept (OIP3) is typically 33 dBm.
- Is the HMC8412LP2FETR RoHS compliant?
Yes, the HMC8412LP2FETR is RoHS compliant.
- What is the package type of the HMC8412LP2FETR?
The device is housed in a 2 mm × 2 mm, 6-lead LFCSP package.
- What are some typical applications of the HMC8412LP2FETR?
Typical applications include test instrumentation, telecommunications, military radar and communication, electronic warfare, and aerospace.
- Are the inputs and outputs of the HMC8412LP2FETR internally matched?
Yes, the inputs and outputs are internally matched to 50 Ω.
