Overview
The HMC8413LP2FETR is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high electron mobility transistor (pHEMT) low noise wideband amplifier. It is designed and manufactured by Analog Devices Inc. and operates over a wide frequency range of 0.01 GHz to 9 GHz. This amplifier is particularly suited for high-frequency applications, including microwave and millimeter-wave systems, due to its high gain, low noise figure, and high output third-order intercept (OIP3).
The device is housed in a RoHS-compliant, 2 mm × 2 mm, 6-lead Leadless Flip-Chip Package (LFCSP), making it ideal for surface-mounted technology (SMT)-based high capacity microwave radio applications. The internally matched inputs and outputs to 50 Ω further enhance its suitability for these applications.
Key Specifications
| Parameter | Typical Value | Unit | Test Conditions |
|---|---|---|---|
| Frequency Range | 0.01 GHz to 9 GHz | GHz | VDD = 5 V, IDQ = 95 mA, RBIAS = 787 Ω, TA = 25°C |
| Gain | 19.5 dB | dB | 0.01 GHz to 7 GHz |
| Noise Figure | 1.9 dB | dB | 0.01 GHz to 7 GHz |
| OIP3 | 35 dBm | dBm | 0.01 GHz to 7 GHz, POUT per tone = 5 dBm |
| Saturated Output Power (PSAT) | 22 dBm | dBm | 0.01 GHz to 7 GHz |
| Supply Voltage (VDD) | 5 V | V | |
| Supply Current (IDQ) | 95 mA | mA | VDD = 5 V |
| Input Return Loss | 12 dB | dB | 7 GHz to 9 GHz |
| Output Return Loss | 15 dB | dB | 7 GHz to 9 GHz |
Key Features
- High Gain: Provides a typical gain of 19.5 dB, making it suitable for amplifying weak input signals.
- Low Noise Figure: A typical noise figure of 1.9 dB, which is crucial for maintaining signal quality in high-frequency systems.
- High OIP3: A typical output third-order intercept (OIP3) of 35 dBm, indicating high linearity and robust performance.
- Internally Matched Inputs and Outputs: Matched to 50 Ω, which simplifies the design and integration into SMT-based systems.
- Single Positive Supply: Operates from a single 5 V supply voltage, simplifying power management.
- Compact Package: Housed in a RoHS-compliant, 2 mm × 2 mm, 6-lead LFCSP, ideal for high-density designs.
- Low Input and Output Return Loss: Minimizes signal reflections and maximizes power transfer.
Applications
- Test Instrumentation: Used in various test and measurement equipment due to its high performance and reliability.
- Military Communications and Radar: Suitable for military communications and radar systems requiring high gain and low noise.
- Telecommunications: Ideal for telecommunications applications, including microwave and millimeter-wave systems.
- Local Oscillator (LO) Driver: Can function as an LO driver for balanced, in-phase/quadrature (I/Q) or image rejection mixers.
- Microwave Receivers: Used in microwave receivers and other high-performance RF/microwave systems.
Q & A
- What is the frequency range of the HMC8413LP2FETR?
The HMC8413LP2FETR operates over a frequency range of 0.01 GHz to 9 GHz.
- What is the typical gain of the HMC8413LP2FETR?
The typical gain is 19.5 dB from 0.01 GHz to 7 GHz.
- What is the noise figure of the HMC8413LP2FETR?
The typical noise figure is 1.9 dB from 0.01 GHz to 7 GHz.
- How much supply current does the HMC8413LP2FETR require?
The device requires a supply current of 95 mA from a 5 V supply voltage.
- What is the saturated output power (PSAT) of the HMC8413LP2FETR?
The saturated output power is typically 22 dBm from 0.01 GHz to 7 GHz.
- How can the HMC8413LP2FETR be enabled or disabled without affecting its RF characteristics?
The amplifier can be enabled or disabled by controlling the bias current through a SPST analog switch, such as the ADG801, in series with the Rbias resistor.
- What are the package dimensions of the HMC8413LP2FETR?
The device is housed in a RoHS-compliant, 2 mm × 2 mm, 6-lead LFCSP package.
- What are the typical applications of the HMC8413LP2FETR?
It is commonly used in test instrumentation, military communications, military radar, telecommunications, and as a local oscillator (LO) driver.
- How are the inputs and outputs of the HMC8413LP2FETR matched?
The inputs and outputs are internally matched to 50 Ω, making the device ideal for SMT-based high capacity microwave radio applications.
- What is the thermal management recommendation for the HMC8413LP2FETR?
The package ground leads and the exposed pad connect directly to the ground plane, and multiple vias ensure adequate electrical and thermal conduction to the heat sink.
