A3I35D025WNR1
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NXP USA Inc. A3I35D025WNR1

Manufacturer No:
A3I35D025WNR1
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
AIRFAST RF LDMOS WIDEBAND INTEGR
Delivery:
Payment:
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Product Introduction

Overview

The A3I35D025WNR1 is a wideband integrated circuit designed by NXP USA Inc. for cellular base station applications. This RF LDMOS power amplifier is optimized for very wide instantaneous bandwidth capability, making it suitable for various cellular base station modulation formats. The device operates within the frequency range of 3200 to 4000 MHz and is internally matched for both input and output, simplifying its integration into systems.

Key Specifications

Parameter Value Unit
Frequency Range 3200 - 4000 MHz
Average Output Power 3.4 W
Supply Voltage 20 - 32 V
P3dB Power P avg + 7.0 dB dB
Load Impedance for Optimum P1dB Power Varies based on configuration Ohms
Load Impedance for Optimum P3dB Power Varies based on configuration Ohms
Package Type Internally matched, straight lead or gull wing (GN) configuration

Key Features

  • Wideband operation from 3200 to 4000 MHz, making it suitable for various cellular base station applications.
  • Internally matched for both input and output, simplifying system design and integration.
  • Multi-stage structure rated for 20 to 32 V operation.
  • Supports all typical cellular base station modulation formats.
  • High average output power of 3.4 W.
  • Optimized for high efficiency and reliability in cellular base station environments.

Applications

The A3I35D025WNR1 is primarily designed for cellular base station applications, including:

  • Cellular base stations requiring wide instantaneous bandwidth capability.
  • Various cellular network infrastructure where high power and efficiency are critical.
  • Systems that need to support multiple cellular modulation formats.

Q & A

  1. What is the frequency range of the A3I35D025WNR1?

    The A3I35D025WNR1 operates within the frequency range of 3200 to 4000 MHz.

  2. What is the average output power of the A3I35D025WNR1?

    The average output power is 3.4 W.

  3. What is the supply voltage range for the A3I35D025WNR1?

    The device operates with a supply voltage range of 20 to 32 V.

  4. Is the A3I35D025WNR1 internally matched?

    Yes, the device is internally matched for both input and output.

  5. What are the primary applications of the A3I35D025WNR1?

    The primary applications are cellular base stations requiring wide instantaneous bandwidth capability.

  6. What modulation formats does the A3I35D025WNR1 support?

    The device supports all typical cellular base station modulation formats.

  7. How is the load impedance optimized for the A3I35D025WNR1?

    The load impedance varies based on the configuration for optimum P1dB and P3dB power.

  8. What is the package type of the A3I35D025WNR1?

    The device is available in straight lead or gull wing (GN) configuration.

  9. Where can I find detailed specifications for the A3I35D025WNR1?

    Detailed specifications can be found in the datasheet available on NXP's official website and other authorized distributors like Mouser Electronics.

  10. How do I ensure proper power supply to the A3I35D025WNR1?

    The first stage drains (V DD1A and V DD1B) and second stage drains (V DD2A and V DD2B) must be tied together and powered by a single DC power supply.

Product Attributes

Frequency:3.2GHz ~ 4GHz
P1dB:42.6dBm
Gain:30.5dB
Noise Figure:- 
RF Type:General Purpose
Voltage - Supply:28V
Current - Supply:- 
Test Frequency:3.8GHz ~ 4GHz
Mounting Type:Surface Mount
Package / Case:TO-270-17 Variant, Flat Leads
Supplier Device Package:TO-270WB-17
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In Stock

$56.39
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