Overview
The ADuM3123BRZ-RL7, produced by Analog Devices Inc., is a 4.0 A isolated, single-channel driver that utilizes Analog Devices' iCoupler® technology to provide precision isolation. This component is designed for high-performance applications requiring reliable and efficient signal isolation. It operates with an input supply ranging from 3.0 V to 5.5 V, making it compatible with lower voltage systems. The ADuM3123BRZ-RL7 offers true galvanic isolation between the input and output, ensuring reliable control over switching characteristics in various configurations.
Key Specifications
Parameter | Min | Typ | Max | Unit | Test Conditions/Comments |
---|---|---|---|---|---|
Propagation Delay (tDHL, tDLH) | 25 | 44 | 64 | ns | CL = 2 nF, VDD2 = 12 V |
Output Rise/Fall Time (10% to 90%) | 1 | 12 | 24 | ns | CL = 2 nF, VDD2 = 12 V |
Dynamic Input Supply Current | 0.05 | mA/Mbps | VDD2 = 12 V | ||
Dynamic Output Supply Current | 1.65 | mA/Mbps | VDD2 = 12 V | ||
Rated Dielectric Insulation Voltage | 3000 | V rms | 1 minute duration | ||
Maximum Working Insulation Voltage (VIORM) | 560 | V peak | |||
Input Capacitance | 4.0 | pF | |||
Capacitance (Input to Output) | 2.0 | pF | f = 1 MHz | ||
Thermal Resistance, Junction to Ambient | 95 | °C/W |
Key Features
- High-speed CMOS and monolithic transformer technology for precision isolation.
- True galvanic isolation between input and output up to 3000 V rms.
- High common-mode transient immunity: >25 kV/μs.
- High junction temperature operation: up to 125°C.
- Complementary metal oxide semiconductor (CMOS) input logic levels.
- Narrow-body, 8-lead SOIC package.
- Safety and regulatory approvals, including UL recognition per UL 1577 and VDE certificate of conformity.
Applications
- Switching power supplies.
- Isolated gate bipolar transistors (IGBT)/MOSFET gate drives.
- Industrial inverters.
- Digital power system management.
- Power monitors and control systems.
Q & A
- What is the maximum propagation delay of the ADuM3123BRZ-RL7?
The maximum propagation delay is 64 ns (CL = 2 nF, VDD2 = 12 V). - What is the rated dielectric insulation voltage of the ADuM3123BRZ-RL7?
The rated dielectric insulation voltage is 3000 V rms for 1 minute duration. - What is the maximum working insulation voltage (VIORM) of the ADuM3123BRZ-RL7?
The maximum working insulation voltage (VIORM) is 560 V peak. - What are the input supply voltage ranges for the ADuM3123BRZ-RL7?
The input supply voltage ranges from 3.0 V to 5.5 V. - What is the thermal resistance, junction to ambient, of the ADuM3123BRZ-RL7?
The thermal resistance, junction to ambient, is 95 °C/W. - What are the key safety and regulatory approvals for the ADuM3123BRZ-RL7?
The component has UL recognition per UL 1577, CSA Component Acceptance Notice, and VDE certificate of conformity. - What is the typical output rise/fall time of the ADuM3123BRZ-RL7?
The typical output rise/fall time is 12 ns (CL = 2 nF, VDD2 = 12 V). - What are the common applications of the ADuM3123BRZ-RL7?
Common applications include switching power supplies, isolated gate bipolar transistors (IGBT)/MOSFET gate drives, and industrial inverters. - What is the dynamic output supply current of the ADuM3123BRZ-RL7?
The dynamic output supply current is 1.65 mA/Mbps (VDD2 = 12 V). - What package type is the ADuM3123BRZ-RL7 available in?
The component is available in a narrow-body, 8-lead SOIC package.