Overview
The SM6T18AHE3_A/I is a surface-mount transient voltage suppressor (TVS) from Vishay General Semiconductor - Diodes Division. This component is part of the SM6T series, designed to protect sensitive electronics from voltage transients and electrostatic discharges. The SM6T18AHE3_A/I is particularly suited for applications requiring high reliability and stability in various environments, including automotive, industrial, and consumer electronics.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Peak Pulse Power (10/1000 μs) | 600 W | W |
| Peak Pulse Power (8/20 μs) | 4 kW | W |
| Reverse Stand-Off Voltage (VWM) | 15.3 V | V |
| Breakdown Voltage (VBR) | 18 - 18.9 V | V |
| Maximum Reverse Leakage Current at VWM | 0.2 μA at 25 °C, 1 μA at 85 °C | μA |
| Operating Junction Temperature Range | -55 to +150 °C | °C |
| Maximum Lead Temperature for Soldering | 260 °C for 10 s | °C |
| Package Type | SMB (DO-214AA) | - |
| Lead Finishing | Matte tin plated leads | - |
Key Features
- Low profile package ideal for automated placement
- Glass passivated chip junction for high reliability
- Available in unidirectional and bidirectional configurations
- High peak pulse power capability: 600 W (10/1000 μs) and 4 kW (8/20 μs)
- Low leakage current: 0.2 μA at 25 °C and 1 μA at 85 °C
- Operating junction temperature up to 150 °C
- Meets MSL level 1, per J-STD-020, and UL94 V-0 flammability rating
- AEC-Q101 qualified for automotive applications
- Compliant with IEC 61000-4-2 and MIL STD 883 for ESD protection
Applications
The SM6T18AHE3_A/I is used to protect sensitive electronics against voltage transients and electrostatic discharges in various applications, including:
- Consumer electronics
- Computer systems
- Industrial equipment
- Automotive systems
- Telecommunication devices
- Signal lines of sensor units
- ICs and MOSFET protection
Q & A
- What is the peak pulse power capability of the SM6T18AHE3_A/I?
The SM6T18AHE3_A/I has a peak pulse power capability of 600 W with a 10/1000 μs waveform and 4 kW with an 8/20 μs waveform.
- What is the reverse stand-off voltage (VWM) of the SM6T18AHE3_A/I?
The reverse stand-off voltage (VWM) is 15.3 V.
- What is the breakdown voltage (VBR) range for the SM6T18AHE3_A/I?
The breakdown voltage (VBR) range is from 18 V to 18.9 V.
- What is the maximum operating junction temperature for the SM6T18AHE3_A/I?
The maximum operating junction temperature is 150 °C.
- Is the SM6T18AHE3_A/I AEC-Q101 qualified?
- What package type is used for the SM6T18AHE3_A/I?
The SM6T18AHE3_A/I is packaged in an SMB (DO-214AA) package.
- What are the lead finishing and soldering specifications for the SM6T18AHE3_A/I?
The leads are matte tin plated and solderable per J-STD-002 and JESD 22-B102. The maximum lead temperature for soldering is 260 °C for 10 seconds.
- Does the SM6T18AHE3_A/I meet any specific industry standards?
- What are the typical applications for the SM6T18AHE3_A/I?
The SM6T18AHE3_A/I is used in consumer electronics, computer systems, industrial equipment, automotive systems, telecommunication devices, and signal lines of sensor units.
- How does the SM6T18AHE3_A/I protect against electrostatic discharges?
The SM6T18AHE3_A/I protects against electrostatic discharges according to IEC 61000-4-2 and MIL STD 883, method 3015, and electrical overstress according to IEC 61000-4-4.
