Overview
The VS-MURD620CT-M3, produced by Vishay General Semiconductor - Diodes Division, is a state-of-the-art ultrafast recovery rectifier. This device is specifically designed to optimize performance in terms of forward voltage drop and ultrafast recovery time. It features a planar structure with platinum doping, enhancing its efficiency and reliability in high-speed switching applications.
Key Specifications
| Parameter | Symbol | Test Conditions | Min. | Max. | Units | |
|---|---|---|---|---|---|---|
| Peak Repetitive Reverse Voltage | VRRM | 200 | V | |||
| Average Rectified Forward Current per Device | IF(AV) | Total device, rated VR, TC = 146 °C | 6 | A | ||
| Non-repetitive Peak Surge Current | IFSM | 50 | A | |||
| Peak Repetitive Forward Current per Diode | IFM | Rated VR, square wave, 20 kHz, TC = 146 °C | 6 | A | ||
| Operating Junction and Storage Temperatures | TJ, TStg | -65 | +175 | °C | ||
| Forward Voltage | VF | IF = 3 A | 0.9 | 1.0 | V | |
| Reverse Leakage Current | IR | VR = VR rated | 5 | μA | ||
| Junction Capacitance | CT | VR = 200 V | 12 | pF | ||
| Reverse Recovery Time | trr | IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V | 35 | ns |
Key Features
- Ultrafast Recovery Time: The MURD620CT-M3 boasts an ultrafast recovery time, typically 35 ns, which is crucial for high-speed switching applications.
- Low Forward Voltage Drop: It features a low forward voltage drop, typically 0.9 V at 3 A, enhancing efficiency and reducing power losses.
- Low Leakage Current: The device has a low reverse leakage current, typically 5 μA, which helps in minimizing standby power consumption.
- High Operating Junction Temperature: It can operate at junction temperatures up to 175 °C, making it suitable for demanding environments.
- ESD Rating: The device has an ESD rating of Human Body Model = 3B (> 8 kV) and Machine Model = C (> 400 V), ensuring robust protection against electrostatic discharge.
- RoHS Compliant and Halogen-Free: The MURD620CT-M3 is RoHS compliant, halogen-free, and lead-free, aligning with environmental regulations).
Applications
The VS-MURD620CT-M3 is designed for use in various high-performance applications, including:
- Switching Power Supplies: Its ultrafast recovery time and low forward voltage drop make it ideal for switching power supplies and DC-DC converters).
- Inverters: The device is suitable for inverter applications due to its fast switching characteristics and low losses).
- Free Wheeling Diodes: It can be used as a free-wheeling diode in power circuits, ensuring efficient current flow and minimal losses).
- Automotive Systems: The MURD620CT-M3 is AEC-Q101 qualified, making it suitable for automotive applications requiring high reliability and performance).
Q & A
- What is the peak repetitive reverse voltage (VRRM) of the MURD620CT-M3?
The peak repetitive reverse voltage (VRRM) is 200 V).
- What is the average rectified forward current per device?
The average rectified forward current per device is 6 A at a rated VR and TC = 146 °C).
- What is the typical forward voltage drop at 3 A?
The typical forward voltage drop at 3 A is 0.9 V).
- What is the maximum junction temperature?
The maximum junction temperature is 175 °C).
- Is the MURD620CT-M3 RoHS compliant and halogen-free?
Yes, the MURD620CT-M3 is RoHS compliant, halogen-free, and lead-free).
- What is the typical reverse recovery time?
The typical reverse recovery time is 35 ns at IF = 1.0 A, dIF/dt = 50 A/μs, and VR = 30 V).
- What are the common applications of the MURD620CT-M3?
Common applications include switching power supplies, inverters, free-wheeling diodes, and automotive systems).
- Does the MURD620CT-M3 have any ESD protection rating?
Yes, it has an ESD rating of Human Body Model = 3B (> 8 kV) and Machine Model = C (> 400 V)).
- What is the package type of the MURD620CT-M3?
The package type is DPAK (TO-252AA)).
- Is the MURD620CT-M3 suitable for high-temperature environments?
Yes, it can operate at junction temperatures up to 175 °C, making it suitable for demanding environments).
